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Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates. / Dvurechenskii, Anatoly; Zinovieva, Aigul; Zinovyev, Vladimir et al.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 14, No. 12, 1700187, 01.12.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Dvurechenskii, A, Zinovieva, A, Zinovyev, V, Nenashev, A, Smagina, Z, Teys, S, Shklyaev, A, Erenburg, S, Trubina, S, Borodavchenko, O, Zhivulko, V & Mudryi, A 2017, 'Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates', Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 14, no. 12, 1700187. https://doi.org/10.1002/pssc.201700187

APA

Dvurechenskii, A., Zinovieva, A., Zinovyev, V., Nenashev, A., Smagina, Z., Teys, S., Shklyaev, A., Erenburg, S., Trubina, S., Borodavchenko, O., Zhivulko, V., & Mudryi, A. (2017). Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates. Physica Status Solidi (C) Current Topics in Solid State Physics, 14(12), [1700187]. https://doi.org/10.1002/pssc.201700187

Vancouver

Dvurechenskii A, Zinovieva A, Zinovyev V, Nenashev A, Smagina Z, Teys S et al. Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates. Physica Status Solidi (C) Current Topics in Solid State Physics. 2017 Dec 1;14(12):1700187. doi: 10.1002/pssc.201700187

Author

Dvurechenskii, Anatoly ; Zinovieva, Aigul ; Zinovyev, Vladimir et al. / Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2017 ; Vol. 14, No. 12.

BibTeX

@article{531f4b36c07447d18b0b7c8d0801d6bf,
title = "Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates",
abstract = "The photoluminescence (PL) properties of combined Ge/Si structures representing a combination of large (200–250 nm) SiGe disk-like quantum dots (QDs) and the groups of smaller (40–50 nm) laterally ordered QDs grown on the nanodisk surface are studied. The experimental results are analyzed basing on the calculations of energy spectra, electron and hole wave functions. It is found that the strain accumulation in multi-layered structure is the main factor providing the room temperature PL. The new type of QD structures that should provide the observation of enhanced PL from SiGe QDs at room temperature is proposed. The structures represent the stacked compact groups of laterally aligned QDs incorporated in Si at the distance 30–40 nm above the large nanodisks.",
keywords = "molecular beam epitaxy, photoluminescence, quantum dot, SiGe nanostructures, SI, NUCLEATION",
author = "Anatoly Dvurechenskii and Aigul Zinovieva and Vladimir Zinovyev and Alexey Nenashev and Zhanna Smagina and Sergey Teys and Aleksandr Shklyaev and Simon Erenburg and Svetlana Trubina and Olga Borodavchenko and Vadim Zhivulko and Aleksandr Mudryi",
year = "2017",
month = dec,
day = "1",
doi = "10.1002/pssc.201700187",
language = "English",
volume = "14",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "12",

}

RIS

TY - JOUR

T1 - Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain-Patterned Substrates

AU - Dvurechenskii, Anatoly

AU - Zinovieva, Aigul

AU - Zinovyev, Vladimir

AU - Nenashev, Alexey

AU - Smagina, Zhanna

AU - Teys, Sergey

AU - Shklyaev, Aleksandr

AU - Erenburg, Simon

AU - Trubina, Svetlana

AU - Borodavchenko, Olga

AU - Zhivulko, Vadim

AU - Mudryi, Aleksandr

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The photoluminescence (PL) properties of combined Ge/Si structures representing a combination of large (200–250 nm) SiGe disk-like quantum dots (QDs) and the groups of smaller (40–50 nm) laterally ordered QDs grown on the nanodisk surface are studied. The experimental results are analyzed basing on the calculations of energy spectra, electron and hole wave functions. It is found that the strain accumulation in multi-layered structure is the main factor providing the room temperature PL. The new type of QD structures that should provide the observation of enhanced PL from SiGe QDs at room temperature is proposed. The structures represent the stacked compact groups of laterally aligned QDs incorporated in Si at the distance 30–40 nm above the large nanodisks.

AB - The photoluminescence (PL) properties of combined Ge/Si structures representing a combination of large (200–250 nm) SiGe disk-like quantum dots (QDs) and the groups of smaller (40–50 nm) laterally ordered QDs grown on the nanodisk surface are studied. The experimental results are analyzed basing on the calculations of energy spectra, electron and hole wave functions. It is found that the strain accumulation in multi-layered structure is the main factor providing the room temperature PL. The new type of QD structures that should provide the observation of enhanced PL from SiGe QDs at room temperature is proposed. The structures represent the stacked compact groups of laterally aligned QDs incorporated in Si at the distance 30–40 nm above the large nanodisks.

KW - molecular beam epitaxy

KW - photoluminescence

KW - quantum dot

KW - SiGe nanostructures

KW - SI

KW - NUCLEATION

UR - http://www.scopus.com/inward/record.url?scp=85030028402&partnerID=8YFLogxK

U2 - 10.1002/pssc.201700187

DO - 10.1002/pssc.201700187

M3 - Article

AN - SCOPUS:85030028402

VL - 14

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 12

M1 - 1700187

ER -

ID: 9409013