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Photogalvanic effect induced by intervalley relaxation in a strained two-dimensional Dirac monolayer. / Snegirev, A. V.; Kovalev, V. M.; Entin, M. V.

In: Physical Review B, Vol. 109, No. 8, 085422, 15.02.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Snegirev, AV, Kovalev, VM & Entin, MV 2024, 'Photogalvanic effect induced by intervalley relaxation in a strained two-dimensional Dirac monolayer', Physical Review B, vol. 109, no. 8, 085422. https://doi.org/10.1103/PhysRevB.109.085422

APA

Snegirev, A. V., Kovalev, V. M., & Entin, M. V. (2024). Photogalvanic effect induced by intervalley relaxation in a strained two-dimensional Dirac monolayer. Physical Review B, 109(8), [ 085422]. https://doi.org/10.1103/PhysRevB.109.085422

Vancouver

Snegirev AV, Kovalev VM, Entin MV. Photogalvanic effect induced by intervalley relaxation in a strained two-dimensional Dirac monolayer. Physical Review B. 2024 Feb 15;109(8): 085422. doi: 10.1103/PhysRevB.109.085422

Author

Snegirev, A. V. ; Kovalev, V. M. ; Entin, M. V. / Photogalvanic effect induced by intervalley relaxation in a strained two-dimensional Dirac monolayer. In: Physical Review B. 2024 ; Vol. 109, No. 8.

BibTeX

@article{2bc45289405f4cd0be84b54140db7046,
title = "Photogalvanic effect induced by intervalley relaxation in a strained two-dimensional Dirac monolayer",
abstract = "We theoretically study the photogalvanic effect in a strained two-dimensional transition-metal dichalcogenide monolayer due to deformation-induced lowering of the monolayer symmetry and electron-density difference in opposite valleys. This effect arises as a system response to a scalar nonequilibrium perturbation (electron-density difference in the valleys), which is in contrast with the conventional photogalvanic effect, represents the second-order response to an external electromagnetic radiation. Using the description of linear and nonlinear interband recombination, we develop a theory for a p-type and an intrinsic monolayer semiconductor. We show that at low temperatures, the photogalvanic current is caused by the impurity relaxation processes controlling the valley population imbalance.",
author = "Snegirev, {A. V.} and Kovalev, {V. M.} and Entin, {M. V.}",
note = "This work was financially supported by the Foundation for the Advancement of Theoretical Physics and Mathematics “BASIS”.",
year = "2024",
month = feb,
day = "15",
doi = "10.1103/PhysRevB.109.085422",
language = "English",
volume = "109",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "8",

}

RIS

TY - JOUR

T1 - Photogalvanic effect induced by intervalley relaxation in a strained two-dimensional Dirac monolayer

AU - Snegirev, A. V.

AU - Kovalev, V. M.

AU - Entin, M. V.

N1 - This work was financially supported by the Foundation for the Advancement of Theoretical Physics and Mathematics “BASIS”.

PY - 2024/2/15

Y1 - 2024/2/15

N2 - We theoretically study the photogalvanic effect in a strained two-dimensional transition-metal dichalcogenide monolayer due to deformation-induced lowering of the monolayer symmetry and electron-density difference in opposite valleys. This effect arises as a system response to a scalar nonequilibrium perturbation (electron-density difference in the valleys), which is in contrast with the conventional photogalvanic effect, represents the second-order response to an external electromagnetic radiation. Using the description of linear and nonlinear interband recombination, we develop a theory for a p-type and an intrinsic monolayer semiconductor. We show that at low temperatures, the photogalvanic current is caused by the impurity relaxation processes controlling the valley population imbalance.

AB - We theoretically study the photogalvanic effect in a strained two-dimensional transition-metal dichalcogenide monolayer due to deformation-induced lowering of the monolayer symmetry and electron-density difference in opposite valleys. This effect arises as a system response to a scalar nonequilibrium perturbation (electron-density difference in the valleys), which is in contrast with the conventional photogalvanic effect, represents the second-order response to an external electromagnetic radiation. Using the description of linear and nonlinear interband recombination, we develop a theory for a p-type and an intrinsic monolayer semiconductor. We show that at low temperatures, the photogalvanic current is caused by the impurity relaxation processes controlling the valley population imbalance.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85186179483&origin=inward&txGid=d5936975e17dad99cb73c2ba7ad43b5f

UR - https://www.mendeley.com/catalogue/9e17038e-811b-321c-b997-549cef6e6ec1/

U2 - 10.1103/PhysRevB.109.085422

DO - 10.1103/PhysRevB.109.085422

M3 - Article

VL - 109

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 8

M1 - 085422

ER -

ID: 61150139