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Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe. / Ikonnikov, Anton; Rumyantsev, Vladimir; Sotnichuk, Mikhail et al.

In: Semiconductor Science and Technology, Vol. 38, No. 8, 085003, 08.2023.

Research output: Contribution to journal › Article › peer-review

Harvard

Ikonnikov, A, Rumyantsev, V, Sotnichuk, M, Mikhailov, N, Dvoretsky, S, Varavin, V, Yakushev, M, Morozov, S & Gavrilenko, V 2023, 'Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe', Semiconductor Science and Technology, vol. 38, no. 8, 085003. https://doi.org/10.1088/1361-6641/acda58

APA

Ikonnikov, A., Rumyantsev, V., Sotnichuk, M., Mikhailov, N., Dvoretsky, S., Varavin, V., Yakushev, M., Morozov, S., & Gavrilenko, V. (2023). Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe. Semiconductor Science and Technology, 38(8), [085003]. https://doi.org/10.1088/1361-6641/acda58

Vancouver

Ikonnikov A, Rumyantsev V, Sotnichuk M, Mikhailov N, Dvoretsky S, Varavin V et al. Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe. Semiconductor Science and Technology. 2023 Aug;38(8):085003. doi: 10.1088/1361-6641/acda58

Author

Ikonnikov, Anton ; Rumyantsev, Vladimir ; Sotnichuk, Mikhail et al. / Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe. In: Semiconductor Science and Technology. 2023 ; Vol. 38, No. 8.

BibTeX

@article{e393edf09a8b4670942a3f2c8b118f9a,
title = "Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe",
abstract = "The arsenic impurity is widely considered to be the best choice for p-type doping of HgCdTe ternary alloys, which has been a formidable problem for decades. This work studies the terahertz photoconductivity of Hg1-xCd xTe with x ∼ 0.22 doped with arsenic and subjected to activation annealing to obtain p-type conductivity. In addition to the inevitable photoexcitation lines of mercury vacancies, which act as double acceptors, the spectra contain a distinctive line associated with the photoexcitation of the arsenic-related acceptor. In contrast to the predictions of the effective mass approximation, the binding energy of the acceptor is found to be about 25 meV. The possible reasons for this unexpectedly high chemical shift, which is not quite consistent with the data recently obtained from photoluminescence and Hall effect measurements, are discussed.",
keywords = "HgCdTe, acceptors, arsenic-related, photoconductivity, spectroscopy",
author = "Anton Ikonnikov and Vladimir Rumyantsev and Mikhail Sotnichuk and Nikolay Mikhailov and Sergey Dvoretsky and Vasily Varavin and Maxim Yakushev and Sergey Morozov and Vladimir Gavrilenko",
note = "This work was supported by the Russian Science Foundation (grant #22-12-00298). The authors are grateful to T A Uaman Svetikova for PC spectra measurements assistance, D V Kozlov for helpful discussions and Arina A. Yantser for assistance in the manuscript preparation. Публикация для корректировки.",
year = "2023",
month = aug,
doi = "10.1088/1361-6641/acda58",
language = "English",
volume = "38",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "8",

}

RIS

TY - JOUR

T1 - Photoconductivity spectroscopy of arsenic-related acceptors in HgCdTe

AU - Ikonnikov, Anton

AU - Rumyantsev, Vladimir

AU - Sotnichuk, Mikhail

AU - Mikhailov, Nikolay

AU - Dvoretsky, Sergey

AU - Varavin, Vasily

AU - Yakushev, Maxim

AU - Morozov, Sergey

AU - Gavrilenko, Vladimir

N1 - This work was supported by the Russian Science Foundation (grant #22-12-00298). The authors are grateful to T A Uaman Svetikova for PC spectra measurements assistance, D V Kozlov for helpful discussions and Arina A. Yantser for assistance in the manuscript preparation. Публикация для корректировки.

PY - 2023/8

Y1 - 2023/8

N2 - The arsenic impurity is widely considered to be the best choice for p-type doping of HgCdTe ternary alloys, which has been a formidable problem for decades. This work studies the terahertz photoconductivity of Hg1-xCd xTe with x ∼ 0.22 doped with arsenic and subjected to activation annealing to obtain p-type conductivity. In addition to the inevitable photoexcitation lines of mercury vacancies, which act as double acceptors, the spectra contain a distinctive line associated with the photoexcitation of the arsenic-related acceptor. In contrast to the predictions of the effective mass approximation, the binding energy of the acceptor is found to be about 25 meV. The possible reasons for this unexpectedly high chemical shift, which is not quite consistent with the data recently obtained from photoluminescence and Hall effect measurements, are discussed.

AB - The arsenic impurity is widely considered to be the best choice for p-type doping of HgCdTe ternary alloys, which has been a formidable problem for decades. This work studies the terahertz photoconductivity of Hg1-xCd xTe with x ∼ 0.22 doped with arsenic and subjected to activation annealing to obtain p-type conductivity. In addition to the inevitable photoexcitation lines of mercury vacancies, which act as double acceptors, the spectra contain a distinctive line associated with the photoexcitation of the arsenic-related acceptor. In contrast to the predictions of the effective mass approximation, the binding energy of the acceptor is found to be about 25 meV. The possible reasons for this unexpectedly high chemical shift, which is not quite consistent with the data recently obtained from photoluminescence and Hall effect measurements, are discussed.

KW - HgCdTe

KW - acceptors

KW - arsenic-related

KW - photoconductivity

KW - spectroscopy

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85163343205&origin=inward&txGid=c6f81422579325b3aafe0bd13ee35f1f

UR - https://www.mendeley.com/catalogue/5a0791f7-e77a-3663-a155-ae516c4de38a/

U2 - 10.1088/1361-6641/acda58

DO - 10.1088/1361-6641/acda58

M3 - Article

VL - 38

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 8

M1 - 085003

ER -

ID: 59263399