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Parametrization of the charge-carrier mobility in organic disordered semiconductors. / Baranovskii, S. D.; Nenashev, A. V.; Hertel, D. et al.

In: Physical Review Applied, Vol. 22, No. 1, 014019, 07.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Baranovskii, SD, Nenashev, AV, Hertel, D, Meerholz, K & Gebhard, F 2024, 'Parametrization of the charge-carrier mobility in organic disordered semiconductors', Physical Review Applied, vol. 22, no. 1, 014019. https://doi.org/10.1103/PhysRevApplied.22.014019

APA

Baranovskii, S. D., Nenashev, A. V., Hertel, D., Meerholz, K., & Gebhard, F. (2024). Parametrization of the charge-carrier mobility in organic disordered semiconductors. Physical Review Applied, 22(1), [014019]. https://doi.org/10.1103/PhysRevApplied.22.014019

Vancouver

Baranovskii SD, Nenashev AV, Hertel D, Meerholz K, Gebhard F. Parametrization of the charge-carrier mobility in organic disordered semiconductors. Physical Review Applied. 2024 Jul;22(1):014019. doi: 10.1103/PhysRevApplied.22.014019

Author

Baranovskii, S. D. ; Nenashev, A. V. ; Hertel, D. et al. / Parametrization of the charge-carrier mobility in organic disordered semiconductors. In: Physical Review Applied. 2024 ; Vol. 22, No. 1.

BibTeX

@article{146bf31574204ea2bbf62d4e8a08b9d0,
title = "Parametrization of the charge-carrier mobility in organic disordered semiconductors",
abstract = "An appropriately parametrized analytical equation (APAE) is suggested to account for charge-carrier mobility in organic disordered semiconductors. This equation correctly reproduces the effects of temperature T, carrier concentration n, and electric field F on the carrier mobility μ(T,F,n), as evidenced by comparison with analytical theories and Monte Carlo simulations. The set of material parameters responsible for charge transport is proven to be at variance with those used in the so-called extended-Gaussian-disorder-model (EGDM) approach, which is widely exploited in commercially distributed device-simulation algorithms. While the EGDM is valid only for cubic lattices with a specific choice of parameters, the APAE describes charge transport in systems with spatial disorder in a wide range of parameters. The APAE is user-friendly and, thus, suitable for incorporation into device-simulation algorithms. ",
author = "Baranovskii, {S. D.} and Nenashev, {A. V.} and D. Hertel and K. Meerholz and F. Gebhard",
note = "A.N. thanks the Faculty of Physics of Philipps-Universit\u00E4t Marburg for kind hospitality during his research stay. S.D.B. and K.M. acknowledge financial support from the Deutsche Forschungsgemeinschaft (Research Training Group \u201CTIDE,\u201D RTG2591).",
year = "2024",
month = jul,
doi = "10.1103/PhysRevApplied.22.014019",
language = "English",
volume = "22",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "1",

}

RIS

TY - JOUR

T1 - Parametrization of the charge-carrier mobility in organic disordered semiconductors

AU - Baranovskii, S. D.

AU - Nenashev, A. V.

AU - Hertel, D.

AU - Meerholz, K.

AU - Gebhard, F.

N1 - A.N. thanks the Faculty of Physics of Philipps-Universit\u00E4t Marburg for kind hospitality during his research stay. S.D.B. and K.M. acknowledge financial support from the Deutsche Forschungsgemeinschaft (Research Training Group \u201CTIDE,\u201D RTG2591).

PY - 2024/7

Y1 - 2024/7

N2 - An appropriately parametrized analytical equation (APAE) is suggested to account for charge-carrier mobility in organic disordered semiconductors. This equation correctly reproduces the effects of temperature T, carrier concentration n, and electric field F on the carrier mobility μ(T,F,n), as evidenced by comparison with analytical theories and Monte Carlo simulations. The set of material parameters responsible for charge transport is proven to be at variance with those used in the so-called extended-Gaussian-disorder-model (EGDM) approach, which is widely exploited in commercially distributed device-simulation algorithms. While the EGDM is valid only for cubic lattices with a specific choice of parameters, the APAE describes charge transport in systems with spatial disorder in a wide range of parameters. The APAE is user-friendly and, thus, suitable for incorporation into device-simulation algorithms.

AB - An appropriately parametrized analytical equation (APAE) is suggested to account for charge-carrier mobility in organic disordered semiconductors. This equation correctly reproduces the effects of temperature T, carrier concentration n, and electric field F on the carrier mobility μ(T,F,n), as evidenced by comparison with analytical theories and Monte Carlo simulations. The set of material parameters responsible for charge transport is proven to be at variance with those used in the so-called extended-Gaussian-disorder-model (EGDM) approach, which is widely exploited in commercially distributed device-simulation algorithms. While the EGDM is valid only for cubic lattices with a specific choice of parameters, the APAE describes charge transport in systems with spatial disorder in a wide range of parameters. The APAE is user-friendly and, thus, suitable for incorporation into device-simulation algorithms.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85198274527&origin=inward&txGid=5a7556daff1152abd9c1a6ca816936e6

UR - https://www.mendeley.com/catalogue/d0bdec4d-9267-3546-85a6-1470615a4448/

U2 - 10.1103/PhysRevApplied.22.014019

DO - 10.1103/PhysRevApplied.22.014019

M3 - Article

VL - 22

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 1

M1 - 014019

ER -

ID: 60851098