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Optical properties of silicon nanopillars with a built-in vertical p-n-junction. / Basalaeva, L. S.; Tsarev, A. V.; Anikin, K. V. et al.

In: Semiconductors, Vol. 56, No. 3, 09.2022, p. 241-348.

Research output: Contribution to journal › Article › peer-review

Harvard

Basalaeva, LS, Tsarev, AV, Anikin, KV, Veber, SL, Kryzhanovskaya, NV & Nastaushev, YV 2022, 'Optical properties of silicon nanopillars with a built-in vertical p-n-junction', Semiconductors, vol. 56, no. 3, pp. 241-348. https://doi.org/10.21883/SC.2022.03.53067.9761

APA

Basalaeva, L. S., Tsarev, A. V., Anikin, K. V., Veber, S. L., Kryzhanovskaya, N. V., & Nastaushev, Y. V. (2022). Optical properties of silicon nanopillars with a built-in vertical p-n-junction. Semiconductors, 56(3), 241-348. https://doi.org/10.21883/SC.2022.03.53067.9761

Vancouver

Basalaeva LS, Tsarev AV, Anikin KV, Veber SL, Kryzhanovskaya NV, Nastaushev YV. Optical properties of silicon nanopillars with a built-in vertical p-n-junction. Semiconductors. 2022 Sept;56(3):241-348. doi: 10.21883/SC.2022.03.53067.9761

Author

Basalaeva, L. S. ; Tsarev, A. V. ; Anikin, K. V. et al. / Optical properties of silicon nanopillars with a built-in vertical p-n-junction. In: Semiconductors. 2022 ; Vol. 56, No. 3. pp. 241-348.

BibTeX

@article{b2a1dee353974b0c84aeeca0a596ea0d,
title = "Optical properties of silicon nanopillars with a built-in vertical p-n-junction",
abstract = "Resonance reflection of light from the ordered arrays of silicon nanopillars (Si NP) was investigated. The height of Si NP was 450 nm. The effect of Si NP oxidation in concentrated nitric acid on the position of resonances in reflection spectra was studied. A weak influence of the additional polymeric coating on the characteristics of reflection from the structures was proven. It is established on the basis of the results of experimental investigation and direct numerical modeling by means of three-dimensional finite difference time domain algorithm (3D FDTD) that the dependence of the resonant wavelength for Si NP on the diameter of Si NP is a linear function with nonzero displacement depending on the pitch. Keywords: silicon nanopillars, structural colors, all-dielectric nanophotonics.",
author = "Basalaeva, {L. S.} and Tsarev, {A. V.} and Anikin, {K. V.} and Veber, {S. L.} and Kryzhanovskaya, {N. V.} and Nastaushev, {Yu. V.}",
year = "2022",
month = sep,
doi = "10.21883/SC.2022.03.53067.9761",
language = "English",
volume = "56",
pages = "241--348",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - Optical properties of silicon nanopillars with a built-in vertical p-n-junction

AU - Basalaeva, L. S.

AU - Tsarev, A. V.

AU - Anikin, K. V.

AU - Veber, S. L.

AU - Kryzhanovskaya, N. V.

AU - Nastaushev, Yu. V.

PY - 2022/9

Y1 - 2022/9

N2 - Resonance reflection of light from the ordered arrays of silicon nanopillars (Si NP) was investigated. The height of Si NP was 450 nm. The effect of Si NP oxidation in concentrated nitric acid on the position of resonances in reflection spectra was studied. A weak influence of the additional polymeric coating on the characteristics of reflection from the structures was proven. It is established on the basis of the results of experimental investigation and direct numerical modeling by means of three-dimensional finite difference time domain algorithm (3D FDTD) that the dependence of the resonant wavelength for Si NP on the diameter of Si NP is a linear function with nonzero displacement depending on the pitch. Keywords: silicon nanopillars, structural colors, all-dielectric nanophotonics.

AB - Resonance reflection of light from the ordered arrays of silicon nanopillars (Si NP) was investigated. The height of Si NP was 450 nm. The effect of Si NP oxidation in concentrated nitric acid on the position of resonances in reflection spectra was studied. A weak influence of the additional polymeric coating on the characteristics of reflection from the structures was proven. It is established on the basis of the results of experimental investigation and direct numerical modeling by means of three-dimensional finite difference time domain algorithm (3D FDTD) that the dependence of the resonant wavelength for Si NP on the diameter of Si NP is a linear function with nonzero displacement depending on the pitch. Keywords: silicon nanopillars, structural colors, all-dielectric nanophotonics.

UR - https://www.mendeley.com/catalogue/defc18de-a437-36e9-9175-8c5cb3cf7920/

U2 - 10.21883/SC.2022.03.53067.9761

DO - 10.21883/SC.2022.03.53067.9761

M3 - Article

VL - 56

SP - 241

EP - 348

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 59360082