Research output: Contribution to journal › Article › peer-review
Optical properties of native (anodic) layer on the InAlAs surface of different morphology. / Valisheva, N. A.; Kruchinin, V. N.; Aksenov, M. S. et al.
In: Thin Solid Films, Vol. 728, 138692, 30.06.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Optical properties of native (anodic) layer on the InAlAs surface of different morphology
AU - Valisheva, N. A.
AU - Kruchinin, V. N.
AU - Aksenov, M. S.
AU - Azarov, I. A.
AU - Nedomolkina, A. A.
N1 - Funding Information: This work was supported by the grant of the Ministry of Science and Higher Education of the Russian Federation no. 075-15-2020-797 (13.1902.21.0024) . Publisher Copyright: © 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/6/30
Y1 - 2021/6/30
N2 - The influence of InAlAs/InP(001) heterostructures surface morphology on the optical properties (dispersive refractive index and extinction coefficient) of the anodic layer, formed by the oxidation in low-energy Townsend gas-discharge O2-Ar-containing plasma at room temperature, was studied using atomic force microscopy and ellipsometry methods. High resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to determine the anodic layer morphology and chemical composition. It is shown that the growth structural defects (pits) on the InAlAs surface, with a density 106–107 cm−2, do not significantly influence the optical properties of the amorphous anodic layers, mainly consisting of In2O3, Al2O3, As2O3 and elemental arsenic quite uniformly distributed over their depth and area. The thickness of thin (≤10 nm) oxide layers on InAlAs is measured at a high accuracy by the nondestructive ellipsometry method using the optical model of a single-layer isotropic film on an absorbing substrate.
AB - The influence of InAlAs/InP(001) heterostructures surface morphology on the optical properties (dispersive refractive index and extinction coefficient) of the anodic layer, formed by the oxidation in low-energy Townsend gas-discharge O2-Ar-containing plasma at room temperature, was studied using atomic force microscopy and ellipsometry methods. High resolution transmission electron microscopy and X-ray photoelectron spectroscopy were used to determine the anodic layer morphology and chemical composition. It is shown that the growth structural defects (pits) on the InAlAs surface, with a density 106–107 cm−2, do not significantly influence the optical properties of the amorphous anodic layers, mainly consisting of In2O3, Al2O3, As2O3 and elemental arsenic quite uniformly distributed over their depth and area. The thickness of thin (≤10 nm) oxide layers on InAlAs is measured at a high accuracy by the nondestructive ellipsometry method using the optical model of a single-layer isotropic film on an absorbing substrate.
KW - Anodic layer
KW - Chemical composition
KW - Indium aluminum arsenide
KW - Optical properties
KW - Spectral ellipsometry
KW - Surface morphology
UR - http://www.scopus.com/inward/record.url?scp=85105693537&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2021.138692
DO - 10.1016/j.tsf.2021.138692
M3 - Article
AN - SCOPUS:85105693537
VL - 728
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
M1 - 138692
ER -
ID: 28554533