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On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation. / Ikonnikov, A. V.; Bovkun, L. S.; Rumyantsev, V. V. et al.

In: Semiconductors, Vol. 51, No. 12, 01.12.2017, p. 1531-1536.

Research output: Contribution to journal › Article › peer-review

Harvard

Ikonnikov, AV, Bovkun, LS, Rumyantsev, VV, Krishtopenko, SS, Aleshkin, VY, Kadykov, AM, Orlita, M, Potemski, M, Gavrilenko, VI, Morozov, SV, Dvoretsky, SA & Mikhailov, NN 2017, 'On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation', Semiconductors, vol. 51, no. 12, pp. 1531-1536. https://doi.org/10.1134/S1063782617120090

APA

Ikonnikov, A. V., Bovkun, L. S., Rumyantsev, V. V., Krishtopenko, S. S., Aleshkin, V. Y., Kadykov, A. M., Orlita, M., Potemski, M., Gavrilenko, V. I., Morozov, S. V., Dvoretsky, S. A., & Mikhailov, N. N. (2017). On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation. Semiconductors, 51(12), 1531-1536. https://doi.org/10.1134/S1063782617120090

Vancouver

Ikonnikov AV, Bovkun LS, Rumyantsev VV, Krishtopenko SS, Aleshkin VY, Kadykov AM et al. On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation. Semiconductors. 2017 Dec 1;51(12):1531-1536. doi: 10.1134/S1063782617120090

Author

Ikonnikov, A. V. ; Bovkun, L. S. ; Rumyantsev, V. V. et al. / On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation. In: Semiconductors. 2017 ; Vol. 51, No. 12. pp. 1531-1536.

BibTeX

@article{1efb5d741ba440068de40ff3324ce5f5,
title = "On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation",
abstract = "The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.",
author = "Ikonnikov, {A. V.} and Bovkun, {L. S.} and Rumyantsev, {V. V.} and Krishtopenko, {S. S.} and Aleshkin, {V. Ya} and Kadykov, {A. M.} and M. Orlita and M. Potemski and Gavrilenko, {V. I.} and Morozov, {S. V.} and Dvoretsky, {S. A.} and Mikhailov, {N. N.}",
year = "2017",
month = dec,
day = "1",
doi = "10.1134/S1063782617120090",
language = "English",
volume = "51",
pages = "1531--1536",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "12",

}

RIS

TY - JOUR

T1 - On the band spectrum in p-type HgTe/CdHgTe heterostructures and its transformation under temperature variation

AU - Ikonnikov, A. V.

AU - Bovkun, L. S.

AU - Rumyantsev, V. V.

AU - Krishtopenko, S. S.

AU - Aleshkin, V. Ya

AU - Kadykov, A. M.

AU - Orlita, M.

AU - Potemski, M.

AU - Gavrilenko, V. I.

AU - Morozov, S. V.

AU - Dvoretsky, S. A.

AU - Mikhailov, N. N.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.

AB - The magnetoabsorption and interband photoconductivity spectra of HgTe/CdHgTe quantum wells exhibiting p-type conductivity are studied at different temperatures. It is shown that, for a sample with a normal band structure, the long-wavelength edge of the spectra shifts to higher energies with temperature increase, indicating an increase of the band gap in the quantum well. For a sample with an inverted band structure, it is for the first time found that the long-wavelength cut-off shifts to lower energies due to the topological phase transition from the inverted band structure to the normal structure with temperature increase. The experimental data are in agreement with the results of theoretical band-structure calculations based on the Kane model.

UR - http://www.scopus.com/inward/record.url?scp=85037621628&partnerID=8YFLogxK

U2 - 10.1134/S1063782617120090

DO - 10.1134/S1063782617120090

M3 - Article

AN - SCOPUS:85037621628

VL - 51

SP - 1531

EP - 1536

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 9645697