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Obstacle-induced Gurzhi effect and hydrodynamic electron flow in two-dimensional systems. / Levin, A. D.; Gusev, G. M.; Chitta, V. A. et al.

In: Physical Review B, Vol. 111, No. 12, 125302, 06.03.2025.

Research output: Contribution to journalArticlepeer-review

Harvard

Levin, AD, Gusev, GM, Chitta, VA, Kvon, ZD, Jaroshevich, AS, Utkin, DE, Dmitriev, DV & Bakarov, AK 2025, 'Obstacle-induced Gurzhi effect and hydrodynamic electron flow in two-dimensional systems', Physical Review B, vol. 111, no. 12, 125302. https://doi.org/10.1103/PhysRevB.111.125302

APA

Levin, A. D., Gusev, G. M., Chitta, V. A., Kvon, Z. D., Jaroshevich, A. S., Utkin, D. E., Dmitriev, D. V., & Bakarov, A. K. (2025). Obstacle-induced Gurzhi effect and hydrodynamic electron flow in two-dimensional systems. Physical Review B, 111(12), [125302]. https://doi.org/10.1103/PhysRevB.111.125302

Vancouver

Levin AD, Gusev GM, Chitta VA, Kvon ZD, Jaroshevich AS, Utkin DE et al. Obstacle-induced Gurzhi effect and hydrodynamic electron flow in two-dimensional systems. Physical Review B. 2025 Mar 6;111(12):125302. doi: 10.1103/PhysRevB.111.125302

Author

Levin, A. D. ; Gusev, G. M. ; Chitta, V. A. et al. / Obstacle-induced Gurzhi effect and hydrodynamic electron flow in two-dimensional systems. In: Physical Review B. 2025 ; Vol. 111, No. 12.

BibTeX

@article{0677025af1474b56b7c80b3e6ebe41c8,
title = "Obstacle-induced Gurzhi effect and hydrodynamic electron flow in two-dimensional systems",
abstract = "he viscous flow of electrons in a narrow channel requires both strong electron-electron interactions and no-slip boundary conditions. However, introducing obstacles within the liquid can significantly increase flow resistance and, as a result, amplify the effects of viscosity. Even in samples with smooth walls, the presence of an obstacle can strongly alter electron behavior, leading to pronounced hydrodynamic effects. We investigated transport in mesoscopic samples containing a disordered array of obstacles. In contrast to samples without obstacles, which do not show a decrease in resistivity with rising temperature, samples with obstacles exhibit a significant resistivity reduction as the temperature increases (the Gurzhi effect). By measuring the negative magnetoresistance, we extracted shear viscosity and other parameters through comparison with theoretical predictions. Consequently, narrow-channel samples with a disordered obstacle array provide a valuable platform for studying hydrodynamic electron flow independently of boundary conditions.",
author = "Levin, {A. D.} and Gusev, {G. M.} and Chitta, {V. A.} and Kvon, {Z. D.} and Jaroshevich, {A. S.} and Utkin, {D. E.} and Dmitriev, {D. V.} and Bakarov, {A. K.}",
note = "Финансирующий спонсор Номер финансирования Акроним Conselho Nacional de Desenvolvimento Cient{\'i}fico e Tecnol{\'o}gico CNPq Advanced Technology Research Council ATRC Funda{\c c}{\~a}o de Amparo {\`a} Pesquisa do Estado de S{\~a}o Paulo 2021/12470-8,2024/06755-8,2019/16736-2 FAPESP Russian Science Foundation 23-72-30003,19-72-30023 RSF ",
year = "2025",
month = mar,
day = "6",
doi = "10.1103/PhysRevB.111.125302",
language = "English",
volume = "111",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Obstacle-induced Gurzhi effect and hydrodynamic electron flow in two-dimensional systems

AU - Levin, A. D.

AU - Gusev, G. M.

AU - Chitta, V. A.

AU - Kvon, Z. D.

AU - Jaroshevich, A. S.

AU - Utkin, D. E.

AU - Dmitriev, D. V.

AU - Bakarov, A. K.

N1 - Финансирующий спонсор Номер финансирования Акроним Conselho Nacional de Desenvolvimento Científico e Tecnológico CNPq Advanced Technology Research Council ATRC Fundação de Amparo à Pesquisa do Estado de São Paulo 2021/12470-8,2024/06755-8,2019/16736-2 FAPESP Russian Science Foundation 23-72-30003,19-72-30023 RSF

PY - 2025/3/6

Y1 - 2025/3/6

N2 - he viscous flow of electrons in a narrow channel requires both strong electron-electron interactions and no-slip boundary conditions. However, introducing obstacles within the liquid can significantly increase flow resistance and, as a result, amplify the effects of viscosity. Even in samples with smooth walls, the presence of an obstacle can strongly alter electron behavior, leading to pronounced hydrodynamic effects. We investigated transport in mesoscopic samples containing a disordered array of obstacles. In contrast to samples without obstacles, which do not show a decrease in resistivity with rising temperature, samples with obstacles exhibit a significant resistivity reduction as the temperature increases (the Gurzhi effect). By measuring the negative magnetoresistance, we extracted shear viscosity and other parameters through comparison with theoretical predictions. Consequently, narrow-channel samples with a disordered obstacle array provide a valuable platform for studying hydrodynamic electron flow independently of boundary conditions.

AB - he viscous flow of electrons in a narrow channel requires both strong electron-electron interactions and no-slip boundary conditions. However, introducing obstacles within the liquid can significantly increase flow resistance and, as a result, amplify the effects of viscosity. Even in samples with smooth walls, the presence of an obstacle can strongly alter electron behavior, leading to pronounced hydrodynamic effects. We investigated transport in mesoscopic samples containing a disordered array of obstacles. In contrast to samples without obstacles, which do not show a decrease in resistivity with rising temperature, samples with obstacles exhibit a significant resistivity reduction as the temperature increases (the Gurzhi effect). By measuring the negative magnetoresistance, we extracted shear viscosity and other parameters through comparison with theoretical predictions. Consequently, narrow-channel samples with a disordered obstacle array provide a valuable platform for studying hydrodynamic electron flow independently of boundary conditions.

UR - https://www.mendeley.com/catalogue/c149f25e-72cd-3855-8387-f82a74b21462/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-86000289091&origin=inward&txGid=42daefa99f6651ed716e7abf13d53a52

U2 - 10.1103/PhysRevB.111.125302

DO - 10.1103/PhysRevB.111.125302

M3 - Article

VL - 111

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 12

M1 - 125302

ER -

ID: 65024921