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Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography. / Smagina, Zh V.; Zinovyev, V. A.; Rudin, S. A. et al.

In: Journal of Applied Physics, Vol. 123, No. 16, 165302, 28.04.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Smagina, ZV, Zinovyev, VA, Rudin, SA, Novikov, PL, Rodyakina, EE & Dvurechenskii, AV 2018, 'Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography', Journal of Applied Physics, vol. 123, no. 16, 165302. https://doi.org/10.1063/1.5009154

APA

Smagina, Z. V., Zinovyev, V. A., Rudin, S. A., Novikov, P. L., Rodyakina, E. E., & Dvurechenskii, A. V. (2018). Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography. Journal of Applied Physics, 123(16), [165302]. https://doi.org/10.1063/1.5009154

Vancouver

Smagina ZV, Zinovyev VA, Rudin SA, Novikov PL, Rodyakina EE, Dvurechenskii AV. Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography. Journal of Applied Physics. 2018 Apr 28;123(16):165302. doi: 10.1063/1.5009154

Author

Smagina, Zh V. ; Zinovyev, V. A. ; Rudin, S. A. et al. / Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 16.

BibTeX

@article{b5f823f5389c40aeb4e2d13e9ac9aa3a,
title = "Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography",
abstract = "Regular pit-patterned Si(001) substrates were prepared by electron-beam lithography followed by plasma chemical etching. The geometry of the pits was controlled by varying the etching conditions and the electron-beam exposure duration. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on the shape of the pit bottom. In the case of pits having a sharp bottom, 3D Ge islands nucleate inside the pits. For pits with a wide flat bottom, the 3D Ge island nucleation takes place at the pit periphery. This effect is attributed to the strain relaxation depending not only on the initial pit shape, but also on its evolution during the Ge wetting layer deposition. It was shown by Monte Carlo simulations that in the case of a pit with a pointed bottom, the relaxation is most effective inside the pit, while for a pit with a wide bottom, the most relaxed area migrates during Ge deposition from the pit bottom to its edges, where 3D Ge islands nucleate.",
keywords = "QUANTUM DOTS, GERMANIUM, SILICON, NANOSTRUCTURES, TRANSITION, CRYSTALS, PYRAMIDS, ISLANDS, SI(001), DOMES",
author = "Smagina, {Zh V.} and Zinovyev, {V. A.} and Rudin, {S. A.} and Novikov, {P. L.} and Rodyakina, {E. E.} and Dvurechenskii, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = apr,
day = "28",
doi = "10.1063/1.5009154",
language = "English",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "16",

}

RIS

TY - JOUR

T1 - Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

AU - Smagina, Zh V.

AU - Zinovyev, V. A.

AU - Rudin, S. A.

AU - Novikov, P. L.

AU - Rodyakina, E. E.

AU - Dvurechenskii, A. V.

N1 - Publisher Copyright: © 2018 Author(s).

PY - 2018/4/28

Y1 - 2018/4/28

N2 - Regular pit-patterned Si(001) substrates were prepared by electron-beam lithography followed by plasma chemical etching. The geometry of the pits was controlled by varying the etching conditions and the electron-beam exposure duration. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on the shape of the pit bottom. In the case of pits having a sharp bottom, 3D Ge islands nucleate inside the pits. For pits with a wide flat bottom, the 3D Ge island nucleation takes place at the pit periphery. This effect is attributed to the strain relaxation depending not only on the initial pit shape, but also on its evolution during the Ge wetting layer deposition. It was shown by Monte Carlo simulations that in the case of a pit with a pointed bottom, the relaxation is most effective inside the pit, while for a pit with a wide bottom, the most relaxed area migrates during Ge deposition from the pit bottom to its edges, where 3D Ge islands nucleate.

AB - Regular pit-patterned Si(001) substrates were prepared by electron-beam lithography followed by plasma chemical etching. The geometry of the pits was controlled by varying the etching conditions and the electron-beam exposure duration. It was shown that the location of three-dimensional (3D) Ge nanoislands subsequently grown on the pit-patterned Si substrates depends on the shape of the pit bottom. In the case of pits having a sharp bottom, 3D Ge islands nucleate inside the pits. For pits with a wide flat bottom, the 3D Ge island nucleation takes place at the pit periphery. This effect is attributed to the strain relaxation depending not only on the initial pit shape, but also on its evolution during the Ge wetting layer deposition. It was shown by Monte Carlo simulations that in the case of a pit with a pointed bottom, the relaxation is most effective inside the pit, while for a pit with a wide bottom, the most relaxed area migrates during Ge deposition from the pit bottom to its edges, where 3D Ge islands nucleate.

KW - QUANTUM DOTS

KW - GERMANIUM

KW - SILICON

KW - NANOSTRUCTURES

KW - TRANSITION

KW - CRYSTALS

KW - PYRAMIDS

KW - ISLANDS

KW - SI(001)

KW - DOMES

UR - http://www.scopus.com/inward/record.url?scp=85046077268&partnerID=8YFLogxK

U2 - 10.1063/1.5009154

DO - 10.1063/1.5009154

M3 - Article

AN - SCOPUS:85046077268

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 16

M1 - 165302

ER -

ID: 12915208