Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Electron and Hole Localization

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	1700592
Number of pages	8
Journal	Advanced Electronic Materials
Volume	4
Issue number	9
DOIs	https://doi.org/10.1002/aelm.201700592
Publication status	Published - 1 Sept 2018

DFT simulation, Flash memory devices, Oxygen vacancy, Potential fluctuations, ZrO, oxygen vacancy, flash memory devices, potential fluctuations, DEVICE, X-RAY-ABSORPTION, ZrOx, POLYMORPHS, ZRO2, FILMS

ID: 15951181