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Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change. / Shikin, A. M.; Estyunin, D. A.; Zaitsev, N. L. et al.

In: Journal of Experimental and Theoretical Physics, Vol. 134, No. 1, 01.2022, p. 103-111.

Research output: Contribution to journal › Article › peer-review

Harvard

Shikin, AM, Estyunin, DA, Zaitsev, NL, Glazkova, DA, Klimovskikh, II, Fil’nov, SO, Rybkin, AG, Kokh, KA, Tereshchenko, OE, Zvezdin, KA & Zvezdin, AK 2022, 'Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change', Journal of Experimental and Theoretical Physics, vol. 134, no. 1, pp. 103-111. https://doi.org/10.1134/S1063776121120141

APA

Shikin, A. M., Estyunin, D. A., Zaitsev, N. L., Glazkova, D. A., Klimovskikh, I. I., Fil’nov, S. O., Rybkin, A. G., Kokh, K. A., Tereshchenko, O. E., Zvezdin, K. A., & Zvezdin, A. K. (2022). Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change. Journal of Experimental and Theoretical Physics, 134(1), 103-111. https://doi.org/10.1134/S1063776121120141

Vancouver

Shikin AM, Estyunin DA, Zaitsev NL, Glazkova DA, Klimovskikh II, Fil’nov SO et al. Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change. Journal of Experimental and Theoretical Physics. 2022 Jan;134(1):103-111. doi: 10.1134/S1063776121120141

Author

Shikin, A. M. ; Estyunin, D. A. ; Zaitsev, N. L. et al. / Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change. In: Journal of Experimental and Theoretical Physics. 2022 ; Vol. 134, No. 1. pp. 103-111.

BibTeX

@article{d901d088bb454352872ab1e344dc2033,
title = "Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change",
abstract = "The possibility of significant modulation of the band gap open at the Dirac point (DP) in the range from 15 to 55 meV for different samples of the antiferromagnetic topological insulator MnBi2Te4 is shown using angle-resolved photoemission spectroscopy. The density functional theory is used to analyze the relation between the gap at the DP and the surface potential gradient, the change of which is modeled by the application of an electric field normal to the (0001) MnBi2Te4 surface. The possibility of both decreasing and increasing the DP gap in the range from 5 to 89 meV with respect to the initial value of 81 meV due to the application of a field is shown. When a field is applied, the localization of topological surface states and the magnetic moments of surface atoms change. Our analysis demonstrates the possibility of an artificial band gap modulation at the DP over a wide energy range, which can be used to modulate the magnetoelectric properties of MnBi2Te4-based systems in applied research and problems.",
author = "Shikin, {A. M.} and Estyunin, {D. A.} and Zaitsev, {N. L.} and Glazkova, {D. A.} and Klimovskikh, {I. I.} and Fil{\textquoteright}nov, {S. O.} and Rybkin, {A. G.} and Kokh, {K. A.} and Tereshchenko, {O. E.} and Zvezdin, {K. A.} and Zvezdin, {A. K.}",
note = "Funding Information: This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Inc.",
year = "2022",
month = jan,
doi = "10.1134/S1063776121120141",
language = "English",
volume = "134",
pages = "103--111",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "1",

}

RIS

TY - JOUR

T1 - Modulation of the Dirac Point Band Gap in the Antiferromagnetic Topological Insulator MnBi2Te4 due to the Surface Potential Gradient Change

AU - Shikin, A. M.

AU - Estyunin, D. A.

AU - Zaitsev, N. L.

AU - Glazkova, D. A.

AU - Klimovskikh, I. I.

AU - Fil’nov, S. O.

AU - Rybkin, A. G.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Zvezdin, K. A.

AU - Zvezdin, A. K.

N1 - Funding Information: This work was supported by the Ministry of Education and Science of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2022, Pleiades Publishing, Inc.

PY - 2022/1

Y1 - 2022/1

N2 - The possibility of significant modulation of the band gap open at the Dirac point (DP) in the range from 15 to 55 meV for different samples of the antiferromagnetic topological insulator MnBi2Te4 is shown using angle-resolved photoemission spectroscopy. The density functional theory is used to analyze the relation between the gap at the DP and the surface potential gradient, the change of which is modeled by the application of an electric field normal to the (0001) MnBi2Te4 surface. The possibility of both decreasing and increasing the DP gap in the range from 5 to 89 meV with respect to the initial value of 81 meV due to the application of a field is shown. When a field is applied, the localization of topological surface states and the magnetic moments of surface atoms change. Our analysis demonstrates the possibility of an artificial band gap modulation at the DP over a wide energy range, which can be used to modulate the magnetoelectric properties of MnBi2Te4-based systems in applied research and problems.

AB - The possibility of significant modulation of the band gap open at the Dirac point (DP) in the range from 15 to 55 meV for different samples of the antiferromagnetic topological insulator MnBi2Te4 is shown using angle-resolved photoemission spectroscopy. The density functional theory is used to analyze the relation between the gap at the DP and the surface potential gradient, the change of which is modeled by the application of an electric field normal to the (0001) MnBi2Te4 surface. The possibility of both decreasing and increasing the DP gap in the range from 5 to 89 meV with respect to the initial value of 81 meV due to the application of a field is shown. When a field is applied, the localization of topological surface states and the magnetic moments of surface atoms change. Our analysis demonstrates the possibility of an artificial band gap modulation at the DP over a wide energy range, which can be used to modulate the magnetoelectric properties of MnBi2Te4-based systems in applied research and problems.

UR - http://www.scopus.com/inward/record.url?scp=85128252661&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/885040dc-0535-3e05-b1e4-fd3bbb7536b0/

U2 - 10.1134/S1063776121120141

DO - 10.1134/S1063776121120141

M3 - Article

AN - SCOPUS:85128252661

VL - 134

SP - 103

EP - 111

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 1

ER -

ID: 35950078