Standard
Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. / Tkachenko, O. A.; Tkachenko, V. A.; Kvon, Z. D. et al.
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. ed. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. p. 131-155 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review
Harvard
Tkachenko, OA
, Tkachenko, VA, Kvon, ZD, Sheglov, DV
& Aseev, AL 2017,
Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. in AV Latyshev, AV Dvurechenskii & AL Aseev (eds),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, Elsevier Science Publishing Company, Inc., pp. 131-155.
https://doi.org/10.1016/B978-0-12-810512-2.00006-8APA
Tkachenko, O. A.
, Tkachenko, V. A., Kvon, Z. D., Sheglov, D. V.
, & Aseev, A. L. (2017).
Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. In AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Eds.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications (pp. 131-155). (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). Elsevier Science Publishing Company, Inc..
https://doi.org/10.1016/B978-0-12-810512-2.00006-8Vancouver
Tkachenko OA
, Tkachenko VA, Kvon ZD, Sheglov DV
, Aseev AL.
Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. In Latyshev AV, Dvurechenskii AV, Aseev AL, editors, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc. 2017. p. 131-155. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). doi: 10.1016/B978-0-12-810512-2.00006-8
Author
Tkachenko, O. A.
; Tkachenko, V. A. ; Kvon, Z. D. et al. /
Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. editor / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. pp. 131-155 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
BibTeX
@inbook{04200dc8019e4c5f8d014a08d58c45b8,
title = "Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures",
abstract = "Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.",
keywords = "2DEG, 3D-electrostatic potentials, Coulomb blockade, Disorder, Graphene-like superlattice, Nanolithography, Quantum ballistics, Quantum dot, Quantum point contact, Ring interferometer, Simulation, Supercomputer calculation, CONDUCTANCE, RING INTERFEROMETER, DOT, POINT CONTACTS, OSCILLATIONS, SCATTERING",
author = "Tkachenko, {O. A.} and Tkachenko, {V. A.} and Kvon, {Z. D.} and Sheglov, {D. V.} and Aseev, {Alexander L.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc. All rights reserved.",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-810512-2.00006-8",
language = "English",
isbn = "9780128105139",
series = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
publisher = "Elsevier Science Publishing Company, Inc.",
pages = "131--155",
editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",
booktitle = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
address = "Netherlands",
}
RIS
TY - CHAP
T1 - Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures
AU - Tkachenko, O. A.
AU - Tkachenko, V. A.
AU - Kvon, Z. D.
AU - Sheglov, D. V.
AU - Aseev, Alexander L.
N1 - Publisher Copyright:
© 2017 Elsevier Inc. All rights reserved.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.
AB - Various semiconductor devices created by molecular beam epitaxy and lithography were numerically modeled: a quantum point contact in the voltage gate-induced two-dimensional electron gas, a versatile tunable two-terminal quantum dot, a small three-terminal quantum dot, and ring interferometers. Three-dimensional electrostatics calculations, taking into account the design of structures, combined with the theories of Coulomb blockade and quantum ballistic transport, allowed explanation of the observed resistance features of nanodevices. Accumulated experience was used to design semiconductor artificial graphene.
KW - 2DEG
KW - 3D-electrostatic potentials
KW - Coulomb blockade
KW - Disorder
KW - Graphene-like superlattice
KW - Nanolithography
KW - Quantum ballistics
KW - Quantum dot
KW - Quantum point contact
KW - Ring interferometer
KW - Simulation
KW - Supercomputer calculation
KW - CONDUCTANCE
KW - RING INTERFEROMETER
KW - DOT
KW - POINT CONTACTS
KW - OSCILLATIONS
KW - SCATTERING
UR - http://www.scopus.com/inward/record.url?scp=85022193883&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/b128546f-a129-3b9a-88a8-67ebf32776e4/
U2 - 10.1016/B978-0-12-810512-2.00006-8
DO - 10.1016/B978-0-12-810512-2.00006-8
M3 - Chapter
SN - 9780128105139
T3 - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
SP - 131
EP - 155
BT - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
A2 - Latyshev, AV
A2 - Dvurechenskii, AV
A2 - Aseev, AL
PB - Elsevier Science Publishing Company, Inc.
ER -
