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Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed auger recombination. / Utochkin, V. V.; Kudryavtsev, K. E.; Fadeev, M. A. et al.

In: Laser Physics, Vol. 31, No. 1, 015801, 30.12.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Utochkin, VV, Kudryavtsev, KE, Fadeev, MA, Razova, AA, Bykov, DS, Aleshkin, VY, Dubinov, AA, Mikhailov, NN, Dvoretsky, SA, Rumyantsev, VV, Gavrilenko, VI & Morozov, SV 2020, 'Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed auger recombination', Laser Physics, vol. 31, no. 1, 015801. https://doi.org/10.1088/1555-6611/abd3f5

APA

Utochkin, V. V., Kudryavtsev, K. E., Fadeev, M. A., Razova, A. A., Bykov, D. S., Aleshkin, V. Y., Dubinov, A. A., Mikhailov, N. N., Dvoretsky, S. A., Rumyantsev, V. V., Gavrilenko, V. I., & Morozov, S. V. (2020). Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed auger recombination. Laser Physics, 31(1), [015801]. https://doi.org/10.1088/1555-6611/abd3f5

Vancouver

Utochkin VV, Kudryavtsev KE, Fadeev MA, Razova AA, Bykov DS, Aleshkin VY et al. Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed auger recombination. Laser Physics. 2020 Dec 30;31(1):015801. doi: 10.1088/1555-6611/abd3f5

Author

Utochkin, V. V. ; Kudryavtsev, K. E. ; Fadeev, M. A. et al. / Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed auger recombination. In: Laser Physics. 2020 ; Vol. 31, No. 1.

BibTeX

@article{577cb283b0b54ec084746403374799c3,
title = "Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed auger recombination",
abstract = "We study the temperature stability of stimulated emission (SE) in HgCdTe/CdHgTe quantum well (QW) heterostructures emitting in the mid-infrared range at wavelengths 7–13 µm. For a series of samples with different band gap energies, maximum operating temperatures at which SE could be achieved are shown to follow closely the characteristic Auger threshold energies derived from the band spectra of the respective QWs. We demonstrate that realization of binary HgTe QWs should provide at least twofold increase in Auger threshold energy compared to the QWs studied (10% Cd content HgCdTe). Thus, one can expect further suppression of non-radiative Auger processes and corresponding increase in operating temperature, the effect being stronger for narrow band gap QWs.",
keywords = "Auger recombination, HgCdTe, Quantum wells, Stimulated emission, Threshold energy, HGCDTE, LASER, quantum wells, threshold energy, stimulated emission",
author = "Utochkin, {V. V.} and Kudryavtsev, {K. E.} and Fadeev, {M. A.} and Razova, {A. A.} and Bykov, {D. S.} and Aleshkin, {V. Ya} and Dubinov, {A. A.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Rumyantsev, {V. V.} and Gavrilenko, {V. I.} and Morozov, {S. V.}",
note = "Funding Information: The authors declare that they have no conflict of interest. The study was performed using equipment of the Center ?Physics and technology of micro- and nanostructures? at IPM RAS. The work was supported by the Ministry of Science and Higher Education of the Russian Federation, Grant #075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2020 Astro Ltd Printed in the UK. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2020",
month = dec,
day = "30",
doi = "10.1088/1555-6611/abd3f5",
language = "English",
volume = "31",
journal = "Laser Physics",
issn = "1054-660X",
publisher = "Institute of Physics Publishing",
number = "1",

}

RIS

TY - JOUR

T1 - Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed auger recombination

AU - Utochkin, V. V.

AU - Kudryavtsev, K. E.

AU - Fadeev, M. A.

AU - Razova, A. A.

AU - Bykov, D. S.

AU - Aleshkin, V. Ya

AU - Dubinov, A. A.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Rumyantsev, V. V.

AU - Gavrilenko, V. I.

AU - Morozov, S. V.

N1 - Funding Information: The authors declare that they have no conflict of interest. The study was performed using equipment of the Center ?Physics and technology of micro- and nanostructures? at IPM RAS. The work was supported by the Ministry of Science and Higher Education of the Russian Federation, Grant #075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2020 Astro Ltd Printed in the UK. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2020/12/30

Y1 - 2020/12/30

N2 - We study the temperature stability of stimulated emission (SE) in HgCdTe/CdHgTe quantum well (QW) heterostructures emitting in the mid-infrared range at wavelengths 7–13 µm. For a series of samples with different band gap energies, maximum operating temperatures at which SE could be achieved are shown to follow closely the characteristic Auger threshold energies derived from the band spectra of the respective QWs. We demonstrate that realization of binary HgTe QWs should provide at least twofold increase in Auger threshold energy compared to the QWs studied (10% Cd content HgCdTe). Thus, one can expect further suppression of non-radiative Auger processes and corresponding increase in operating temperature, the effect being stronger for narrow band gap QWs.

AB - We study the temperature stability of stimulated emission (SE) in HgCdTe/CdHgTe quantum well (QW) heterostructures emitting in the mid-infrared range at wavelengths 7–13 µm. For a series of samples with different band gap energies, maximum operating temperatures at which SE could be achieved are shown to follow closely the characteristic Auger threshold energies derived from the band spectra of the respective QWs. We demonstrate that realization of binary HgTe QWs should provide at least twofold increase in Auger threshold energy compared to the QWs studied (10% Cd content HgCdTe). Thus, one can expect further suppression of non-radiative Auger processes and corresponding increase in operating temperature, the effect being stronger for narrow band gap QWs.

KW - Auger recombination

KW - HgCdTe

KW - Quantum wells

KW - Stimulated emission

KW - Threshold energy

KW - HGCDTE

KW - LASER

KW - quantum wells

KW - threshold energy

KW - stimulated emission

UR - http://www.scopus.com/inward/record.url?scp=85099159863&partnerID=8YFLogxK

U2 - 10.1088/1555-6611/abd3f5

DO - 10.1088/1555-6611/abd3f5

M3 - Article

AN - SCOPUS:85099159863

VL - 31

JO - Laser Physics

JF - Laser Physics

SN - 1054-660X

IS - 1

M1 - 015801

ER -

ID: 27487497