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Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. / Yaroshevich, A. S.; Kvon, Z. D.; Gusev, G. M. et al.

In: JETP Letters, Vol. 111, No. 2, 01.2020, p. 121-125.

Research output: Contribution to journal › Article › peer-review

Harvard

Yaroshevich, AS, Kvon, ZD, Gusev, GM & Mikhailov, NN 2020, 'Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well', JETP Letters, vol. 111, no. 2, pp. 121-125. https://doi.org/10.1134/S0021364020020113

APA

Yaroshevich, A. S., Kvon, Z. D., Gusev, G. M., & Mikhailov, N. N. (2020). Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. JETP Letters, 111(2), 121-125. https://doi.org/10.1134/S0021364020020113

Vancouver

Yaroshevich AS, Kvon ZD, Gusev GM, Mikhailov NN. Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. JETP Letters. 2020 Jan;111(2):121-125. doi: 10.1134/S0021364020020113

Author

Yaroshevich, A. S. ; Kvon, Z. D. ; Gusev, G. M. et al. / Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well. In: JETP Letters. 2020 ; Vol. 111, No. 2. pp. 121-125.

BibTeX

@article{8bc3137ee4ce43d79078d81e39ebd0f3,
title = "Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well",
abstract = "The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.",
keywords = "EDGE TRANSPORT",
author = "Yaroshevich, {A. S.} and Kvon, {Z. D.} and Gusev, {G. M.} and Mikhailov, {N. N.}",
year = "2020",
month = jan,
doi = "10.1134/S0021364020020113",
language = "English",
volume = "111",
pages = "121--125",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "2",

}

RIS

TY - JOUR

T1 - Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

AU - Yaroshevich, A. S.

AU - Kvon, Z. D.

AU - Gusev, G. M.

AU - Mikhailov, N. N.

PY - 2020/1

Y1 - 2020/1

N2 - The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

AB - The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110–169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

KW - EDGE TRANSPORT

UR - http://www.scopus.com/inward/record.url?scp=85083246152&partnerID=8YFLogxK

U2 - 10.1134/S0021364020020113

DO - 10.1134/S0021364020020113

M3 - Article

AN - SCOPUS:85083246152

VL - 111

SP - 121

EP - 125

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 2

ER -

ID: 24012787