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Mechanism of resistive switching in films based on partially fluorinated graphene

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1134/S1063782617100116
Final published version

A. I. Ivanov
N. A. Nebogatikova
I. I. Kurkina
I. V. Antonova

Original language	English
Pages (from-to)	1306-1312
Number of pages	7
Journal	Semiconductors
Volume	51
Issue number	10
DOIs	https://doi.org/10.1134/S1063782617100116
Publication status	Published - 1 Oct 2017

Research areas

COMPOSITE FILMS, OXIDE, PARTICLES, DEVICES

OECD FOS+WOS

ID: 9893491