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Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal. / Yakimov, A. I.; Kirienko, V. V.; Dvurechenskii, A. V. et al.

In: JETP Letters, Vol. 118, No. 4, 08.2023, p. 244-248.

Research output: Contribution to journal › Article › peer-review

Harvard

Yakimov, AI, Kirienko, VV, Dvurechenskii, AV & Utkin, DE 2023, 'Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal', JETP Letters, vol. 118, no. 4, pp. 244-248. https://doi.org/10.1134/S0021364023602105

APA

Yakimov, A. I., Kirienko, V. V., Dvurechenskii, A. V., & Utkin, D. E. (2023). Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal. JETP Letters, 118(4), 244-248. https://doi.org/10.1134/S0021364023602105

Vancouver

Yakimov AI, Kirienko VV, Dvurechenskii AV, Utkin DE. Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal. JETP Letters. 2023 Aug;118(4):244-248. doi: 10.1134/S0021364023602105

Author

Yakimov, A. I. ; Kirienko, V. V. ; Dvurechenskii, A. V. et al. / Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal. In: JETP Letters. 2023 ; Vol. 118, No. 4. pp. 244-248.

BibTeX

@article{9870ac99d8544decaa164fcb6a139a1b,
title = "Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal",
abstract = "The spectral characteristics of the photocurrent in the near-infrared range in vertical Ge/Si p–i–n photodiodes with Ge quantum dots embedded in a two-dimensional photonic crystal are investigated. The interaction of the quantum dots with photonic Bloch modes leads to the resonant enhancement of the sensitivity of photodiodes. The dependences of the photocurrent on the angle of incidence of light are used to determine the dispersion relations of the Bloch modes. Regions in the dispersion characteristics where the group velocity of photons is close to zero are revealed. It is established that the maximum enhancement of the photocurrent relative to a photodiode without photonic crystal, which can be up to a factor of ~60, results from the interaction of quantum dots with “slow” Bloch modes.",
author = "Yakimov, {A. I.} and Kirienko, {V. V.} and Dvurechenskii, {A. V.} and Utkin, {D. E.}",
note = "This study was supported by the Russian Science Foundation (project no. 19-12-00070-P). Публикация для корректировки.",
year = "2023",
month = aug,
doi = "10.1134/S0021364023602105",
language = "English",
volume = "118",
pages = "244--248",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "4",

}

RIS

TY - JOUR

T1 - Manifestation of “Slow” Light in the Photocurrent Spectra of Ge/Si Quantum Dot Layers Combined with a Photonic Crystal

AU - Yakimov, A. I.

AU - Kirienko, V. V.

AU - Dvurechenskii, A. V.

AU - Utkin, D. E.

N1 - This study was supported by the Russian Science Foundation (project no. 19-12-00070-P). Публикация для корректировки.

PY - 2023/8

Y1 - 2023/8

N2 - The spectral characteristics of the photocurrent in the near-infrared range in vertical Ge/Si p–i–n photodiodes with Ge quantum dots embedded in a two-dimensional photonic crystal are investigated. The interaction of the quantum dots with photonic Bloch modes leads to the resonant enhancement of the sensitivity of photodiodes. The dependences of the photocurrent on the angle of incidence of light are used to determine the dispersion relations of the Bloch modes. Regions in the dispersion characteristics where the group velocity of photons is close to zero are revealed. It is established that the maximum enhancement of the photocurrent relative to a photodiode without photonic crystal, which can be up to a factor of ~60, results from the interaction of quantum dots with “slow” Bloch modes.

AB - The spectral characteristics of the photocurrent in the near-infrared range in vertical Ge/Si p–i–n photodiodes with Ge quantum dots embedded in a two-dimensional photonic crystal are investigated. The interaction of the quantum dots with photonic Bloch modes leads to the resonant enhancement of the sensitivity of photodiodes. The dependences of the photocurrent on the angle of incidence of light are used to determine the dispersion relations of the Bloch modes. Regions in the dispersion characteristics where the group velocity of photons is close to zero are revealed. It is established that the maximum enhancement of the photocurrent relative to a photodiode without photonic crystal, which can be up to a factor of ~60, results from the interaction of quantum dots with “slow” Bloch modes.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85173946753&origin=inward&txGid=bf0b31948c72d9b45c924b3c4247e81f

UR - https://www.mendeley.com/catalogue/77b4624d-3786-37a2-8c41-52aee21fc344/

U2 - 10.1134/S0021364023602105

DO - 10.1134/S0021364023602105

M3 - Article

VL - 118

SP - 244

EP - 248

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 4

ER -

ID: 59264057