Standard

Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate. / Smagina, Zh V.; Zinovyev, V. A.; Zinovieva, A. F. et al.

In: Journal of Luminescence, Vol. 249, 119033, 09.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Smagina, ZV, Zinovyev, VA, Zinovieva, AF, Stepikhova, MV, Peretokin, AV, Rodyakina, EE, Dyakov, SA, Novikov, AV & Dvurechenskii, AV 2022, 'Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate', Journal of Luminescence, vol. 249, 119033. https://doi.org/10.1016/j.jlumin.2022.119033

APA

Smagina, Z. V., Zinovyev, V. A., Zinovieva, A. F., Stepikhova, M. V., Peretokin, A. V., Rodyakina, E. E., Dyakov, S. A., Novikov, A. V., & Dvurechenskii, A. V. (2022). Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate. Journal of Luminescence, 249, [119033]. https://doi.org/10.1016/j.jlumin.2022.119033

Vancouver

Smagina ZV, Zinovyev VA, Zinovieva AF, Stepikhova MV, Peretokin AV, Rodyakina EE et al. Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate. Journal of Luminescence. 2022 Sept;249:119033. doi: 10.1016/j.jlumin.2022.119033

Author

Smagina, Zh V. ; Zinovyev, V. A. ; Zinovieva, A. F. et al. / Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate. In: Journal of Luminescence. 2022 ; Vol. 249.

BibTeX

@article{cbcb8c6328ff4c878424a05388f78abe,
title = "Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate",
abstract = "The results of studying the luminescent properties of epitaxially grown structures with spatially ordered Ge/Si nanoislands (quantum dots), in which the pit-patterned “silicon-on-insulator” substrates serve both for the spatial ordering of quantum dots and for the two-dimensional photonic crystal formation, are presented. It is found that with a certain choice of pit-patterned substrate parameters (diameter of pits and their spatial period), in the photoluminescence spectra of such structures, the multiple narrow peaks are observed. In addition, a significant increase in the quantum dot luminescence signal intensity occurs in the near-infrared range. The effects are related to resonance interaction of quantum dot emitters with photonic crystal modes. The luminescence enhancement effect persists up to room temperatures.",
keywords = "Luminescence, Photonic crystal, Quantum dots, SiGe heterostructures, Spatial ordering",
author = "Smagina, {Zh V.} and Zinovyev, {V. A.} and Zinovieva, {A. F.} and Stepikhova, {M. V.} and Peretokin, {A. V.} and Rodyakina, {E. E.} and Dyakov, {S. A.} and Novikov, {A. V.} and Dvurechenskii, {A. V.}",
note = "Funding Information: This work was supported by the Russian Science Foundation (Grant 21-72-20184 ). Publisher Copyright: {\textcopyright} 2022",
year = "2022",
month = sep,
doi = "10.1016/j.jlumin.2022.119033",
language = "English",
volume = "249",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate

AU - Smagina, Zh V.

AU - Zinovyev, V. A.

AU - Zinovieva, A. F.

AU - Stepikhova, M. V.

AU - Peretokin, A. V.

AU - Rodyakina, E. E.

AU - Dyakov, S. A.

AU - Novikov, A. V.

AU - Dvurechenskii, A. V.

N1 - Funding Information: This work was supported by the Russian Science Foundation (Grant 21-72-20184 ). Publisher Copyright: © 2022

PY - 2022/9

Y1 - 2022/9

N2 - The results of studying the luminescent properties of epitaxially grown structures with spatially ordered Ge/Si nanoislands (quantum dots), in which the pit-patterned “silicon-on-insulator” substrates serve both for the spatial ordering of quantum dots and for the two-dimensional photonic crystal formation, are presented. It is found that with a certain choice of pit-patterned substrate parameters (diameter of pits and their spatial period), in the photoluminescence spectra of such structures, the multiple narrow peaks are observed. In addition, a significant increase in the quantum dot luminescence signal intensity occurs in the near-infrared range. The effects are related to resonance interaction of quantum dot emitters with photonic crystal modes. The luminescence enhancement effect persists up to room temperatures.

AB - The results of studying the luminescent properties of epitaxially grown structures with spatially ordered Ge/Si nanoislands (quantum dots), in which the pit-patterned “silicon-on-insulator” substrates serve both for the spatial ordering of quantum dots and for the two-dimensional photonic crystal formation, are presented. It is found that with a certain choice of pit-patterned substrate parameters (diameter of pits and their spatial period), in the photoluminescence spectra of such structures, the multiple narrow peaks are observed. In addition, a significant increase in the quantum dot luminescence signal intensity occurs in the near-infrared range. The effects are related to resonance interaction of quantum dot emitters with photonic crystal modes. The luminescence enhancement effect persists up to room temperatures.

KW - Luminescence

KW - Photonic crystal

KW - Quantum dots

KW - SiGe heterostructures

KW - Spatial ordering

UR - http://www.scopus.com/inward/record.url?scp=85131421908&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/680c3035-852b-37da-995d-56b04aacf175/

U2 - 10.1016/j.jlumin.2022.119033

DO - 10.1016/j.jlumin.2022.119033

M3 - Article

AN - SCOPUS:85131421908

VL - 249

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

M1 - 119033

ER -

ID: 36437832