Research output: Contribution to journal › Article › peer-review
Low-Temperature Conductance of Nanosystems under Conditions of Weak Coupling with a Microwave Generator. / Jaroshevich, A. S.; Tkachenko, V. A.; Kvon, Z. D. et al.
In: Optoelectronics, Instrumentation and Data Processing, Vol. 60, No. 4, 8, 08.2024, p. 505-521.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Low-Temperature Conductance of Nanosystems under Conditions of Weak Coupling with a Microwave Generator
AU - Jaroshevich, A. S.
AU - Tkachenko, V. A.
AU - Kvon, Z. D.
AU - Kuzmin, N. S.
AU - Tkachenko, O. A.
AU - Baksheev, D. G.
AU - Marchishin, I. V.
AU - Bakarov, A. K.
AU - Rodyakina, E. E.
AU - Antonov, V. A.
AU - Popov, V. P.
AU - Latyshev, A. V.
N1 - The theoretical part of this work was supported by the Russian Science Foundation (project no. 19-72-30023). The experimental part of this work was supported by the Russian Science Foundation (project no. 23-72-30003).
PY - 2024/8
Y1 - 2024/8
N2 - A strong response of nanosystems to the action of weak microwave power through the gap between the sample and the end of the coaxial cable from the microwave generator is detected by measurements at 4.2 K of the conductance of a short-channel -type silicon transistor and samples with a short quantum point contact in a two-dimensional electron gas of GaAs/AlGaAs heterostructures. The conductance response is gigantic in the tunnel mode of the devices, and the sign of the microwave photoconductance outside this mode depended on the mesoscopic state of the sample and the studied range of gate voltage. The nature of the discovered effects is elucidated by modeling mesoscopic transport within the framework of single-particle quantum mechanics and the Landauer formula as well as by analyzing the basic circuits of electrical control of the semiconductor device. The main reason for the response of nanosystems to microwave exposure is forced in-phase charge oscillations in contacts to the semiconductor due to capacitive coupling in the near metallic environment of the sample.
AB - A strong response of nanosystems to the action of weak microwave power through the gap between the sample and the end of the coaxial cable from the microwave generator is detected by measurements at 4.2 K of the conductance of a short-channel -type silicon transistor and samples with a short quantum point contact in a two-dimensional electron gas of GaAs/AlGaAs heterostructures. The conductance response is gigantic in the tunnel mode of the devices, and the sign of the microwave photoconductance outside this mode depended on the mesoscopic state of the sample and the studied range of gate voltage. The nature of the discovered effects is elucidated by modeling mesoscopic transport within the framework of single-particle quantum mechanics and the Landauer formula as well as by analyzing the basic circuits of electrical control of the semiconductor device. The main reason for the response of nanosystems to microwave exposure is forced in-phase charge oscillations in contacts to the semiconductor due to capacitive coupling in the near metallic environment of the sample.
KW - GaAs/AlGaAs heterostructures
KW - coaxial cables
KW - dynamic chemical potential
KW - edge capacitance
KW - field-effect transistor
KW - mesoscopic transport
KW - microwave photoconductance
KW - short constriction
KW - silicon-on-insulator
KW - two-dimensional electron gas (2DEG)
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85217438696&origin=inward&txGid=5dd2f29f3c3ae00e8dcc6cbef5c99ef3
UR - https://www.elibrary.ru/item.asp?id=79610714
UR - https://www.mendeley.com/catalogue/56509f08-4b90-3ff0-8fce-7007666d8c83/
U2 - 10.3103/S8756699024700584
DO - 10.3103/S8756699024700584
M3 - Article
VL - 60
SP - 505
EP - 521
JO - Optoelectronics, Instrumentation and Data Processing
JF - Optoelectronics, Instrumentation and Data Processing
SN - 8756-6990
IS - 4
M1 - 8
ER -
ID: 64718445