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Low-power resistive switching in a two-terminal VO2 mesostructures. / Kapoguzov, K. E.; Milyushin, D. M.; Tumashev, V. S. et al.

In: Physica B: Condensed Matter, Vol. 716, 417765, 01.11.2025.

Research output: Contribution to journal › Article › peer-review

Harvard

Kapoguzov, KE, Milyushin, DM, Tumashev, VS, Bagochus, EK, Kichay, VN, Yakovkina, LV & Mutilin, SV 2025, 'Low-power resistive switching in a two-terminal VO2 mesostructures', Physica B: Condensed Matter, vol. 716, 417765. https://doi.org/10.1016/j.physb.2025.417765

APA

Kapoguzov, K. E., Milyushin, D. M., Tumashev, V. S., Bagochus, E. K., Kichay, V. N., Yakovkina, L. V., & Mutilin, S. V. (2025). Low-power resistive switching in a two-terminal VO2 mesostructures. Physica B: Condensed Matter, 716, [417765]. https://doi.org/10.1016/j.physb.2025.417765

Vancouver

Kapoguzov KE, Milyushin DM, Tumashev VS, Bagochus EK, Kichay VN, Yakovkina LV et al. Low-power resistive switching in a two-terminal VO2 mesostructures. Physica B: Condensed Matter. 2025 Nov 1;716:417765. doi: 10.1016/j.physb.2025.417765

Author

Kapoguzov, K. E. ; Milyushin, D. M. ; Tumashev, V. S. et al. / Low-power resistive switching in a two-terminal VO2 mesostructures. In: Physica B: Condensed Matter. 2025 ; Vol. 716.

BibTeX

@article{0961638cd6124e849578a4d614aad357,
title = "Low-power resistive switching in a two-terminal VO2 mesostructures",
abstract = "Vanadium dioxide (VO2) is a promising material for high-speed, energy-efficient nanoelectronic and nanophotonic devices due to its semiconductor–metal phase transition. In this study, we investigated resistive switching in a VO2 mesostructures with varying contact widths. We showed that mesostructure formation significantly reduces the current flow area, heat dissipation and enhances the switching ratio compared to a solid film. At a contact width of 3 μm, the current jumped by ∼400 times, an order of magnitude greater than in the solid-film device, while the threshold switching power was ∼0.78 mW, also an order of magnitude lower. Moreover, reducing contact width in solid films caused current spreading over an area 2–10 times wider than the contact width, leading to unwanted thermal crosstalk in potential dense neuromorphic systems. We proposed mesostructure with contact widths less than 10 μm as an efficient approach to improving switching localization.",
keywords = "Mesostructure, Threshold power, Two-terminal resistive switches, Vanadium dioxide",
author = "Kapoguzov, {K. E.} and Milyushin, {D. M.} and Tumashev, {V. S.} and Bagochus, {E. K.} and Kichay, {V. N.} and Yakovkina, {L. V.} and Mutilin, {S. V.}",
note = "The present work was supported by the Ministry of Science and Higher Education of the Russian Federation. The SEM images were obtained on a Hitachi SU8220 electron microscope at the Collective Use Center “Nanostructures”. The authors express their gratitude to Dr. T.A. Gavrilova for the SEM images taken and to Dr. I.V. Korolkov for the XRD data taken.",
year = "2025",
month = nov,
day = "1",
doi = "10.1016/j.physb.2025.417765",
language = "English",
volume = "716",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier Science Publishing Company, Inc.",

}

RIS

TY - JOUR

T1 - Low-power resistive switching in a two-terminal VO2 mesostructures

AU - Kapoguzov, K. E.

AU - Milyushin, D. M.

AU - Tumashev, V. S.

AU - Bagochus, E. K.

AU - Kichay, V. N.

AU - Yakovkina, L. V.

AU - Mutilin, S. V.

N1 - The present work was supported by the Ministry of Science and Higher Education of the Russian Federation. The SEM images were obtained on a Hitachi SU8220 electron microscope at the Collective Use Center “Nanostructures”. The authors express their gratitude to Dr. T.A. Gavrilova for the SEM images taken and to Dr. I.V. Korolkov for the XRD data taken.

PY - 2025/11/1

Y1 - 2025/11/1

N2 - Vanadium dioxide (VO2) is a promising material for high-speed, energy-efficient nanoelectronic and nanophotonic devices due to its semiconductor–metal phase transition. In this study, we investigated resistive switching in a VO2 mesostructures with varying contact widths. We showed that mesostructure formation significantly reduces the current flow area, heat dissipation and enhances the switching ratio compared to a solid film. At a contact width of 3 μm, the current jumped by ∼400 times, an order of magnitude greater than in the solid-film device, while the threshold switching power was ∼0.78 mW, also an order of magnitude lower. Moreover, reducing contact width in solid films caused current spreading over an area 2–10 times wider than the contact width, leading to unwanted thermal crosstalk in potential dense neuromorphic systems. We proposed mesostructure with contact widths less than 10 μm as an efficient approach to improving switching localization.

AB - Vanadium dioxide (VO2) is a promising material for high-speed, energy-efficient nanoelectronic and nanophotonic devices due to its semiconductor–metal phase transition. In this study, we investigated resistive switching in a VO2 mesostructures with varying contact widths. We showed that mesostructure formation significantly reduces the current flow area, heat dissipation and enhances the switching ratio compared to a solid film. At a contact width of 3 μm, the current jumped by ∼400 times, an order of magnitude greater than in the solid-film device, while the threshold switching power was ∼0.78 mW, also an order of magnitude lower. Moreover, reducing contact width in solid films caused current spreading over an area 2–10 times wider than the contact width, leading to unwanted thermal crosstalk in potential dense neuromorphic systems. We proposed mesostructure with contact widths less than 10 μm as an efficient approach to improving switching localization.

KW - Mesostructure

KW - Threshold power

KW - Two-terminal resistive switches

KW - Vanadium dioxide

UR - https://www.scopus.com/pages/publications/105014543056

UR - https://www.mendeley.com/catalogue/5532c0a9-1869-340e-ba65-325fece2f48f/

U2 - 10.1016/j.physb.2025.417765

DO - 10.1016/j.physb.2025.417765

M3 - Article

VL - 716

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

M1 - 417765

ER -

ID: 68971470