Standard

Low dislocation density germanium crystal growth by modified heat exchange method. / Kurus, A. F.; Shlegel, V. N.; Isaenko, L. I.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 321, 118534, 11.2025.

Research output: Contribution to journal › Article › peer-review

Harvard

Kurus, AF, Shlegel, VN & Isaenko, LI 2025, 'Low dislocation density germanium crystal growth by modified heat exchange method', Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 321, 118534. https://doi.org/10.1016/j.mseb.2025.118534

APA

Kurus, A. F., Shlegel, V. N., & Isaenko, L. I. (2025). Low dislocation density germanium crystal growth by modified heat exchange method. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 321, [118534]. https://doi.org/10.1016/j.mseb.2025.118534

Vancouver

Kurus AF, Shlegel VN, Isaenko LI. Low dislocation density germanium crystal growth by modified heat exchange method. Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2025 Nov;321:118534. doi: 10.1016/j.mseb.2025.118534

Author

Kurus, A. F. ; Shlegel, V. N. ; Isaenko, L. I. / Low dislocation density germanium crystal growth by modified heat exchange method. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2025 ; Vol. 321.

BibTeX

@article{f12c15c276f5473286add83b3e147d1c,
title = "Low dislocation density germanium crystal growth by modified heat exchange method",
abstract = "The germanium crystal growth process by a modified heat exchanger method under low temperature gradients conditions was investigated in this work. The furnace and heat exchanger design were developed by modeling in STR CGSim 18. Optimal operating modes of heaters and theoretical calculations of the dislocation density distribution in crystals were obtained by computer simulation based on thermoelastic stress data using Alexander-Haasana models. The developed method of growing was tested during the growth of germanium crystals with diameter of 60 mm. As a result, the germanium single crystal in direction with a dislocation density of 200–500 cm−2 was grown.",
keywords = "Crystal growth, Germanium, Simiconductors",
author = "Kurus, {A. F.} and Shlegel, {V. N.} and Isaenko, {L. I.}",
note = "This work was supported by the Ministry of Education and Science of the Russian Federation, grant FSUS-2025-0011 (dislocation density measurements), and partly done on state assignment of IGM SB RAS No. 122041400031-2 (crystal growth and simulation).",
year = "2025",
month = nov,
doi = "10.1016/j.mseb.2025.118534",
language = "English",
volume = "321",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier Science Publishing Company, Inc.",

}

RIS

TY - JOUR

T1 - Low dislocation density germanium crystal growth by modified heat exchange method

AU - Kurus, A. F.

AU - Shlegel, V. N.

AU - Isaenko, L. I.

N1 - This work was supported by the Ministry of Education and Science of the Russian Federation, grant FSUS-2025-0011 (dislocation density measurements), and partly done on state assignment of IGM SB RAS No. 122041400031-2 (crystal growth and simulation).

PY - 2025/11

Y1 - 2025/11

N2 - The germanium crystal growth process by a modified heat exchanger method under low temperature gradients conditions was investigated in this work. The furnace and heat exchanger design were developed by modeling in STR CGSim 18. Optimal operating modes of heaters and theoretical calculations of the dislocation density distribution in crystals were obtained by computer simulation based on thermoelastic stress data using Alexander-Haasana models. The developed method of growing was tested during the growth of germanium crystals with diameter of 60 mm. As a result, the germanium single crystal in direction with a dislocation density of 200–500 cm−2 was grown.

AB - The germanium crystal growth process by a modified heat exchanger method under low temperature gradients conditions was investigated in this work. The furnace and heat exchanger design were developed by modeling in STR CGSim 18. Optimal operating modes of heaters and theoretical calculations of the dislocation density distribution in crystals were obtained by computer simulation based on thermoelastic stress data using Alexander-Haasana models. The developed method of growing was tested during the growth of germanium crystals with diameter of 60 mm. As a result, the germanium single crystal in direction with a dislocation density of 200–500 cm−2 was grown.

KW - Crystal growth

KW - Germanium

KW - Simiconductors

UR - https://www.mendeley.com/catalogue/e0c7b49b-4cc5-335e-85c6-f0d509e01c3c/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-105008502889&origin=inward&txGid=9034b53d9e23b51577d5e745d8a125e4

U2 - 10.1016/j.mseb.2025.118534

DO - 10.1016/j.mseb.2025.118534

M3 - Article

VL - 321

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

M1 - 118534

ER -

ID: 68149748