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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals. / Shmagin, V. B.; Yablonskiy, A. N.; Stepikhova, M. V. et al.

In: Nanotechnology, Vol. 35, No. 16, 165203, 15.04.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Shmagin, VB, Yablonskiy, AN, Stepikhova, MV, Yurasov, DV, Mikhaylov, AN, Tetelbaum, DI, Rodyakina, EE, Morozova, EE, Shengurov, DV, Kraev, SA, Yunin, PA, Belov, AI & Novikov, AV 2024, 'Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals', Nanotechnology, vol. 35, no. 16, 165203. https://doi.org/10.1088/1361-6528/ad1f8a

APA

Shmagin, V. B., Yablonskiy, A. N., Stepikhova, M. V., Yurasov, D. V., Mikhaylov, A. N., Tetelbaum, D. I., Rodyakina, E. E., Morozova, E. E., Shengurov, D. V., Kraev, S. A., Yunin, P. A., Belov, A. I., & Novikov, A. V. (2024). Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals. Nanotechnology, 35(16), [165203]. https://doi.org/10.1088/1361-6528/ad1f8a

Vancouver

Shmagin VB, Yablonskiy AN, Stepikhova MV, Yurasov DV, Mikhaylov AN, Tetelbaum DI et al. Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals. Nanotechnology. 2024 Apr 15;35(16):165203. doi: 10.1088/1361-6528/ad1f8a

Author

Shmagin, V. B. ; Yablonskiy, A. N. ; Stepikhova, M. V. et al. / Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals. In: Nanotechnology. 2024 ; Vol. 35, No. 16.

BibTeX

@article{caf7c8c3464241f39101e49eb6d662fa,
title = "Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals",
abstract = "Room temperature lateral p+-i-n+ light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+ and n+ contact regions made it possible to reduce the impurity activation temperature from 800 °С-1100 °С to 600 °С, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55 μm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55 μm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.",
keywords = "SiGe quantum dots, electroluminescence, light emitting diodes, photonic crystals, silicon photonics, {\textquoteleft}bound state in continuum{\textquoteright} modes",
author = "Shmagin, {V. B.} and Yablonskiy, {A. N.} and Stepikhova, {M. V.} and Yurasov, {D. V.} and Mikhaylov, {A. N.} and Tetelbaum, {D. I.} and Rodyakina, {E. E.} and Morozova, {E. E.} and Shengurov, {D. V.} and Kraev, {S. A.} and Yunin, {P. A.} and Belov, {A. I.} and Novikov, {A. V.}",
note = "The work was supported by the Center of Excellence {\textquoteleft}Center of Photonics{\textquoteright}, funded by the Ministry of Science and Higher Education of the Russian Federation, Contract No. 075–15–2022–316. Theoretical modeling of the PhC mode structure and emissivity was supported by RSF (Grant No. 19-72-10011). The authors would also like to thank the multiple access centers {\textquoteleft}Physics and technology of micro- and nanostructures{\textquoteright} (IPM RAS), {\textquoteleft}VTAN{\textquoteright} (NSU) and {\textquoteleft}Nanostructures{\textquoteright} (ISP SB RAS).",
year = "2024",
month = apr,
day = "15",
doi = "10.1088/1361-6528/ad1f8a",
language = "English",
volume = "35",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "16",

}

RIS

TY - JOUR

T1 - Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals

AU - Shmagin, V. B.

AU - Yablonskiy, A. N.

AU - Stepikhova, M. V.

AU - Yurasov, D. V.

AU - Mikhaylov, A. N.

AU - Tetelbaum, D. I.

AU - Rodyakina, E. E.

AU - Morozova, E. E.

AU - Shengurov, D. V.

AU - Kraev, S. A.

AU - Yunin, P. A.

AU - Belov, A. I.

AU - Novikov, A. V.

N1 - The work was supported by the Center of Excellence ‘Center of Photonics’, funded by the Ministry of Science and Higher Education of the Russian Federation, Contract No. 075–15–2022–316. Theoretical modeling of the PhC mode structure and emissivity was supported by RSF (Grant No. 19-72-10011). The authors would also like to thank the multiple access centers ‘Physics and technology of micro- and nanostructures’ (IPM RAS), ‘VTAN’ (NSU) and ‘Nanostructures’ (ISP SB RAS).

PY - 2024/4/15

Y1 - 2024/4/15

N2 - Room temperature lateral p+-i-n+ light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+ and n+ contact regions made it possible to reduce the impurity activation temperature from 800 °С-1100 °С to 600 °С, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55 μm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55 μm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

AB - Room temperature lateral p+-i-n+ light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+ and n+ contact regions made it possible to reduce the impurity activation temperature from 800 °С-1100 °С to 600 °С, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55 μm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55 μm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

KW - SiGe quantum dots

KW - electroluminescence

KW - light emitting diodes

KW - photonic crystals

KW - silicon photonics

KW - ‘bound state in continuum’ modes

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85183943648&origin=inward&txGid=4953225e84e2e10bfbac34f7acf38c05

UR - https://www.mendeley.com/catalogue/1d7145c4-4b5a-3205-b934-e9ae431cd711/

U2 - 10.1088/1361-6528/ad1f8a

DO - 10.1088/1361-6528/ad1f8a

M3 - Article

C2 - 38232400

VL - 35

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 16

M1 - 165203

ER -

ID: 61055938