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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities. / Stepikhova, M. V.; Novikov, A. V.; Yablonskiy, A. N. et al.

In: Semiconductor Science and Technology, Vol. 34, No. 2, 024003, 10.01.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Stepikhova, MV, Novikov, AV, Yablonskiy, AN, Shaleev, MV, Utkin, DE, Rutckaia, VV, Skorokhodov, EV, Sergeev, SM, Yurasov, DV & Krasilnik, ZF 2019, 'Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities', Semiconductor Science and Technology, vol. 34, no. 2, 024003. https://doi.org/10.1088/1361-6641/aaf7a7

APA

Stepikhova, M. V., Novikov, A. V., Yablonskiy, A. N., Shaleev, M. V., Utkin, D. E., Rutckaia, V. V., Skorokhodov, E. V., Sergeev, S. M., Yurasov, D. V., & Krasilnik, Z. F. (2019). Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities. Semiconductor Science and Technology, 34(2), [024003]. https://doi.org/10.1088/1361-6641/aaf7a7

Vancouver

Stepikhova MV, Novikov AV, Yablonskiy AN, Shaleev MV, Utkin DE, Rutckaia VV et al. Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities. Semiconductor Science and Technology. 2019 Jan 10;34(2):024003. doi: 10.1088/1361-6641/aaf7a7

Author

Stepikhova, M. V. ; Novikov, A. V. ; Yablonskiy, A. N. et al. / Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities. In: Semiconductor Science and Technology. 2019 ; Vol. 34, No. 2.

BibTeX

@article{df92ac747aa54704bf00c5170bbfb8d8,
title = "Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities",
abstract = "Luminescent properties of self-assembled Ge(Si)/SOI nanoislands embedded in two-dimensional photonic crystal (PhC) slabs with and without L3 cavities were studied with PhC period a varied between 350 and 600 nm. For small periods (a ≤ 450 nm), the nanoisland luminescence, which spans over the wavelength range from 1.2 to 1.6 μm, overlaps with the PhC bandgap resulting in a coupling with the localized modes of an L3 cavity. It is shown that for larger periods (a > 450 nm), nanoisland emission couples to the radiative modes above the bandgap located in the vicinity of the -point of the photonic crystal Brillouin zone and is characterized by the low group velocity. In this case, a significant (up to 35-fold) increase in the PL intensity was observed in a number of PhCs without a cavity. From a technological point of view, the latter result makes such types of photonic crystal structures particularly promising for the realization of Si-based light emitters operating in the telecommunication wavelength range because, firstly, their manufacture does not require a precise cavity formation and, secondly, they provide a much larger area for the radiating region, as compared with PhC cavities.",
keywords = "Ge(Si) self-assembled nanoislands, L3 cavity, micro-photoluminescence, photonic crystals, slow-light modes, GE QUANTUM DOTS, EXTRACTION, PHOTOLUMINESCENCE, SILICON, ELECTROLUMINESCENCE",
author = "Stepikhova, {M. V.} and Novikov, {A. V.} and Yablonskiy, {A. N.} and Shaleev, {M. V.} and Utkin, {D. E.} and Rutckaia, {V. V.} and Skorokhodov, {E. V.} and Sergeev, {S. M.} and Yurasov, {D. V.} and Krasilnik, {Z. F.}",
year = "2019",
month = jan,
day = "10",
doi = "10.1088/1361-6641/aaf7a7",
language = "English",
volume = "34",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "2",

}

RIS

TY - JOUR

T1 - Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

AU - Stepikhova, M. V.

AU - Novikov, A. V.

AU - Yablonskiy, A. N.

AU - Shaleev, M. V.

AU - Utkin, D. E.

AU - Rutckaia, V. V.

AU - Skorokhodov, E. V.

AU - Sergeev, S. M.

AU - Yurasov, D. V.

AU - Krasilnik, Z. F.

PY - 2019/1/10

Y1 - 2019/1/10

N2 - Luminescent properties of self-assembled Ge(Si)/SOI nanoislands embedded in two-dimensional photonic crystal (PhC) slabs with and without L3 cavities were studied with PhC period a varied between 350 and 600 nm. For small periods (a ≤ 450 nm), the nanoisland luminescence, which spans over the wavelength range from 1.2 to 1.6 μm, overlaps with the PhC bandgap resulting in a coupling with the localized modes of an L3 cavity. It is shown that for larger periods (a > 450 nm), nanoisland emission couples to the radiative modes above the bandgap located in the vicinity of the -point of the photonic crystal Brillouin zone and is characterized by the low group velocity. In this case, a significant (up to 35-fold) increase in the PL intensity was observed in a number of PhCs without a cavity. From a technological point of view, the latter result makes such types of photonic crystal structures particularly promising for the realization of Si-based light emitters operating in the telecommunication wavelength range because, firstly, their manufacture does not require a precise cavity formation and, secondly, they provide a much larger area for the radiating region, as compared with PhC cavities.

AB - Luminescent properties of self-assembled Ge(Si)/SOI nanoislands embedded in two-dimensional photonic crystal (PhC) slabs with and without L3 cavities were studied with PhC period a varied between 350 and 600 nm. For small periods (a ≤ 450 nm), the nanoisland luminescence, which spans over the wavelength range from 1.2 to 1.6 μm, overlaps with the PhC bandgap resulting in a coupling with the localized modes of an L3 cavity. It is shown that for larger periods (a > 450 nm), nanoisland emission couples to the radiative modes above the bandgap located in the vicinity of the -point of the photonic crystal Brillouin zone and is characterized by the low group velocity. In this case, a significant (up to 35-fold) increase in the PL intensity was observed in a number of PhCs without a cavity. From a technological point of view, the latter result makes such types of photonic crystal structures particularly promising for the realization of Si-based light emitters operating in the telecommunication wavelength range because, firstly, their manufacture does not require a precise cavity formation and, secondly, they provide a much larger area for the radiating region, as compared with PhC cavities.

KW - Ge(Si) self-assembled nanoislands

KW - L3 cavity

KW - micro-photoluminescence

KW - photonic crystals

KW - slow-light modes

KW - GE QUANTUM DOTS

KW - EXTRACTION

KW - PHOTOLUMINESCENCE

KW - SILICON

KW - ELECTROLUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85064080158&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aaf7a7

DO - 10.1088/1361-6641/aaf7a7

M3 - Article

AN - SCOPUS:85064080158

VL - 34

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 2

M1 - 024003

ER -

ID: 22317706