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Laser-induced damage threshold of nonlinear gase and gase:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 µm. / Zhu, Chongqiang; Dyomin, Victor; Yudin, Nikolay et al.

In: Applied Sciences (Switzerland), Vol. 11, No. 3, 1208, 01.02.2021, p. 1-10.

Research output: Contribution to journal › Article › peer-review

Harvard

Zhu, C, Dyomin, V, Yudin, N, Antipov, O, Verozubova, G, Eranov, I, Zinoviev, M, Podzyvalov, S, Zhuravlyova, Y, Slyunko, Y & Yang, C 2021, 'Laser-induced damage threshold of nonlinear gase and gase:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 µm', Applied Sciences (Switzerland), vol. 11, no. 3, 1208, pp. 1-10. https://doi.org/10.3390/app11031208

APA

Zhu, C., Dyomin, V., Yudin, N., Antipov, O., Verozubova, G., Eranov, I., Zinoviev, M., Podzyvalov, S., Zhuravlyova, Y., Slyunko, Y., & Yang, C. (2021). Laser-induced damage threshold of nonlinear gase and gase:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 µm. Applied Sciences (Switzerland), 11(3), 1-10. [1208]. https://doi.org/10.3390/app11031208

Vancouver

Zhu C, Dyomin V, Yudin N, Antipov O, Verozubova G, Eranov I et al. Laser-induced damage threshold of nonlinear gase and gase:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 µm. Applied Sciences (Switzerland). 2021 Feb 1;11(3):1-10. 1208. doi: 10.3390/app11031208

Author

Zhu, Chongqiang ; Dyomin, Victor ; Yudin, Nikolay et al. / Laser-induced damage threshold of nonlinear gase and gase:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 µm. In: Applied Sciences (Switzerland). 2021 ; Vol. 11, No. 3. pp. 1-10.

BibTeX

@article{96326b8ded114e99b5c09d6e5badf081,
title = "Laser-induced damage threshold of nonlinear gase and gase:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 µm",
abstract = "The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed the influence of test radiation energy parameters (pulse repetition rate, pulse duration) on the damage threshold. Laser-induced damage threshold was determined with the parameters of the incident radiation close to the pump radiation parameters of promising dual-wavelength optical parametric oscillators (effective pump sources for THz difference frequency oscillators): wavelength was ≈2.1 µm; pulse repetition rates were 10, 12, 14, and 20 kHz; and pulse durations were 15, 18, 20, and 22 ns. The obtained results made it possible to conclude that the value of GaSe damage threshold at a wavelength of 2.091 µm of the incident radiation was influenced by the accumulation effects (the damage threshold decreased as the pulse repetition rate increased). The accumulation effects were more significant in the case of the In-doped sample, since a more significant decrease in the damage threshold was observed with increasing frequency in terms of the peak power and the fluence.",
keywords = "GaSe, Laser-induced damage threshold, Nonlinear crystals",
author = "Chongqiang Zhu and Victor Dyomin and Nikolay Yudin and Oleg Antipov and Galina Verozubova and Ilya Eranov and Mikhail Zinoviev and Sergey Podzyvalov and Yelena Zhuravlyova and Yelena Slyunko and Chunhui Yang",
note = "Funding Information: Funding: This research was supported by Ministry of Science and Higher Education of the Russian Federation, project no. 0721-2020-0038. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = feb,
day = "1",
doi = "10.3390/app11031208",
language = "English",
volume = "11",
pages = "1--10",
journal = "Applied Sciences (Switzerland)",
issn = "2076-3417",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "3",

}

RIS

TY - JOUR

T1 - Laser-induced damage threshold of nonlinear gase and gase:In crystals upon exposure to pulsed radiation at a wavelength of 2.1 µm

AU - Zhu, Chongqiang

AU - Dyomin, Victor

AU - Yudin, Nikolay

AU - Antipov, Oleg

AU - Verozubova, Galina

AU - Eranov, Ilya

AU - Zinoviev, Mikhail

AU - Podzyvalov, Sergey

AU - Zhuravlyova, Yelena

AU - Slyunko, Yelena

AU - Yang, Chunhui

N1 - Funding Information: Funding: This research was supported by Ministry of Science and Higher Education of the Russian Federation, project no. 0721-2020-0038. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/2/1

Y1 - 2021/2/1

N2 - The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed the influence of test radiation energy parameters (pulse repetition rate, pulse duration) on the damage threshold. Laser-induced damage threshold was determined with the parameters of the incident radiation close to the pump radiation parameters of promising dual-wavelength optical parametric oscillators (effective pump sources for THz difference frequency oscillators): wavelength was ≈2.1 µm; pulse repetition rates were 10, 12, 14, and 20 kHz; and pulse durations were 15, 18, 20, and 22 ns. The obtained results made it possible to conclude that the value of GaSe damage threshold at a wavelength of 2.091 µm of the incident radiation was influenced by the accumulation effects (the damage threshold decreased as the pulse repetition rate increased). The accumulation effects were more significant in the case of the In-doped sample, since a more significant decrease in the damage threshold was observed with increasing frequency in terms of the peak power and the fluence.

AB - The paper defined the laser-induced damage threshold from the fluence and the peak power of GaSe and GaSe:In single crystals upon exposure to nanosecond radiation in the two micron range and assessed the influence of test radiation energy parameters (pulse repetition rate, pulse duration) on the damage threshold. Laser-induced damage threshold was determined with the parameters of the incident radiation close to the pump radiation parameters of promising dual-wavelength optical parametric oscillators (effective pump sources for THz difference frequency oscillators): wavelength was ≈2.1 µm; pulse repetition rates were 10, 12, 14, and 20 kHz; and pulse durations were 15, 18, 20, and 22 ns. The obtained results made it possible to conclude that the value of GaSe damage threshold at a wavelength of 2.091 µm of the incident radiation was influenced by the accumulation effects (the damage threshold decreased as the pulse repetition rate increased). The accumulation effects were more significant in the case of the In-doped sample, since a more significant decrease in the damage threshold was observed with increasing frequency in terms of the peak power and the fluence.

KW - GaSe

KW - Laser-induced damage threshold

KW - Nonlinear crystals

UR - http://www.scopus.com/inward/record.url?scp=85100256073&partnerID=8YFLogxK

U2 - 10.3390/app11031208

DO - 10.3390/app11031208

M3 - Article

AN - SCOPUS:85100256073

VL - 11

SP - 1

EP - 10

JO - Applied Sciences (Switzerland)

JF - Applied Sciences (Switzerland)

SN - 2076-3417

IS - 3

M1 - 1208

ER -

ID: 27651025