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Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm. / Boyko, A. A.; Eryshin, E. Yu; Kostyukova, N. Yu et al.

Proceedings - International Conference Laser Optics 2020, ICLO 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9285890 (Proceedings - International Conference Laser Optics 2020, ICLO 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Boyko, AA, Eryshin, EY, Kostyukova, NY, Kolker, DB, Kostyukov, AI, Miroshnichenko, IB, Badikov, DV & Badikov, VV 2020, Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm. in Proceedings - International Conference Laser Optics 2020, ICLO 2020., 9285890, Proceedings - International Conference Laser Optics 2020, ICLO 2020, Institute of Electrical and Electronics Engineers Inc., 2020 International Conference Laser Optics, ICLO 2020, St. Petersburg, Russian Federation, 02.11.2020. https://doi.org/10.1109/ICLO48556.2020.9285890

APA

Boyko, A. A., Eryshin, E. Y., Kostyukova, N. Y., Kolker, D. B., Kostyukov, A. I., Miroshnichenko, I. B., Badikov, D. V., & Badikov, V. V. (2020). Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm. In Proceedings - International Conference Laser Optics 2020, ICLO 2020 [9285890] (Proceedings - International Conference Laser Optics 2020, ICLO 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICLO48556.2020.9285890

Vancouver

Boyko AA, Eryshin EY, Kostyukova NY, Kolker DB, Kostyukov AI, Miroshnichenko IB et al. Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm. In Proceedings - International Conference Laser Optics 2020, ICLO 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9285890. (Proceedings - International Conference Laser Optics 2020, ICLO 2020). doi: 10.1109/ICLO48556.2020.9285890

Author

Boyko, A. A. ; Eryshin, E. Yu ; Kostyukova, N. Yu et al. / Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm. Proceedings - International Conference Laser Optics 2020, ICLO 2020. Institute of Electrical and Electronics Engineers Inc., 2020. (Proceedings - International Conference Laser Optics 2020, ICLO 2020).

BibTeX

@inproceedings{103f5316f33044f98ffe56292c1ca847,
title = "Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm",
abstract = "Laser induced damage in dark yellow phase of BaGa4Se7 (BGSe) crystal has been investigated at the wavelengths of 1053 nm. Damage by multiple pulse irradiation (500 pulses) has been studied and the probabilistic behavior of the damage is discussed.",
keywords = "BaGa4Se7 crystal, barium chalcogenides, laser-induced damage threshold (LIDT)",
author = "Boyko, {A. A.} and Eryshin, {E. Yu} and Kostyukova, {N. Yu} and Kolker, {D. B.} and Kostyukov, {A. I.} and Miroshnichenko, {I. B.} and Badikov, {D. V.} and Badikov, {V. V.}",
note = "Funding Information: ACKNOWLEDGMENT The reported study was funded by RFBR, project number 19-32-60055 (LIDT experiment), by RFBR (grant № 18-32-00105) (preparing of tested BGSe plate) and project № FSUS-2020-0036. Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 2020 International Conference Laser Optics, ICLO 2020 ; Conference date: 02-11-2020 Through 06-11-2020",
year = "2020",
month = nov,
day = "2",
doi = "10.1109/ICLO48556.2020.9285890",
language = "English",
series = "Proceedings - International Conference Laser Optics 2020, ICLO 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings - International Conference Laser Optics 2020, ICLO 2020",
address = "United States",

}

RIS

TY - GEN

T1 - Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm

AU - Boyko, A. A.

AU - Eryshin, E. Yu

AU - Kostyukova, N. Yu

AU - Kolker, D. B.

AU - Kostyukov, A. I.

AU - Miroshnichenko, I. B.

AU - Badikov, D. V.

AU - Badikov, V. V.

N1 - Funding Information: ACKNOWLEDGMENT The reported study was funded by RFBR, project number 19-32-60055 (LIDT experiment), by RFBR (grant № 18-32-00105) (preparing of tested BGSe plate) and project № FSUS-2020-0036. Publisher Copyright: © 2020 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2020/11/2

Y1 - 2020/11/2

N2 - Laser induced damage in dark yellow phase of BaGa4Se7 (BGSe) crystal has been investigated at the wavelengths of 1053 nm. Damage by multiple pulse irradiation (500 pulses) has been studied and the probabilistic behavior of the damage is discussed.

AB - Laser induced damage in dark yellow phase of BaGa4Se7 (BGSe) crystal has been investigated at the wavelengths of 1053 nm. Damage by multiple pulse irradiation (500 pulses) has been studied and the probabilistic behavior of the damage is discussed.

KW - BaGa4Se7 crystal

KW - barium chalcogenides

KW - laser-induced damage threshold (LIDT)

UR - http://www.scopus.com/inward/record.url?scp=85099377585&partnerID=8YFLogxK

U2 - 10.1109/ICLO48556.2020.9285890

DO - 10.1109/ICLO48556.2020.9285890

M3 - Conference contribution

AN - SCOPUS:85099377585

T3 - Proceedings - International Conference Laser Optics 2020, ICLO 2020

BT - Proceedings - International Conference Laser Optics 2020, ICLO 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 International Conference Laser Optics, ICLO 2020

Y2 - 2 November 2020 through 6 November 2020

ER -

ID: 27505456