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Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. / Ullah, S.; Gusev, G. M.; Bakarov, A. K. et al.

In: Journal of Applied Physics, Vol. 121, No. 20, 205703, 28.05.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Ullah, S, Gusev, GM, Bakarov, AK & Hernandez, FGG 2017, 'Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells', Journal of Applied Physics, vol. 121, no. 20, 205703. https://doi.org/10.1063/1.4984118

APA

Ullah, S., Gusev, G. M., Bakarov, A. K., & Hernandez, F. G. G. (2017). Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. Journal of Applied Physics, 121(20), [205703]. https://doi.org/10.1063/1.4984118

Vancouver

Ullah S, Gusev GM, Bakarov AK, Hernandez FGG. Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. Journal of Applied Physics. 2017 May 28;121(20):205703. doi: 10.1063/1.4984118

Author

Ullah, S. ; Gusev, G. M. ; Bakarov, A. K. et al. / Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. In: Journal of Applied Physics. 2017 ; Vol. 121, No. 20.

BibTeX

@article{b1c8cc4f206b4a86aee2928d39b46de3,
title = "Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells",
abstract = "We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power.",
keywords = "COHERENCE, ELECTRONS, SEMICONDUCTORS, AMPLIFICATION, SYSTEM, GAAS",
author = "S. Ullah and Gusev, {G. M.} and Bakarov, {A. K.} and Hernandez, {F. G.G.}",
year = "2017",
month = may,
day = "28",
doi = "10.1063/1.4984118",
language = "English",
volume = "121",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "20",

}

RIS

TY - JOUR

T1 - Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells

AU - Ullah, S.

AU - Gusev, G. M.

AU - Bakarov, A. K.

AU - Hernandez, F. G.G.

PY - 2017/5/28

Y1 - 2017/5/28

N2 - We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power.

AB - We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power.

KW - COHERENCE

KW - ELECTRONS

KW - SEMICONDUCTORS

KW - AMPLIFICATION

KW - SYSTEM

KW - GAAS

UR - http://www.scopus.com/inward/record.url?scp=85020006583&partnerID=8YFLogxK

U2 - 10.1063/1.4984118

DO - 10.1063/1.4984118

M3 - Article

AN - SCOPUS:85020006583

VL - 121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 20

M1 - 205703

ER -

ID: 9078413