Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method

Original language	English
Title of host publication	2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings
Publisher	IEEE Computer Society
Pages	12-15
Number of pages	4
Volume	2018-July
ISBN (Print)	9781538650219
DOIs	https://doi.org/10.1109/EDM.2018.8434958
Publication status	Published - 13 Aug 2018
Event	19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Erlagol, Altai, Russian Federation Duration: 29 Jun 2018 → 3 Jul 2018

Conference	19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018
Country/Territory	Russian Federation
City	Erlagol, Altai
Period	29.06.2018 → 03.07.2018

'Wake up' operation, Ferroelectric memory, Ferroelectricit, Hf(Zr)O structure, Nonvolatile memory

ID: 16246897