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Investigation of Hf(Zr)O₂ film ferroelectric properties grown by atomic layer deposition method

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Department of Physics

DOI

https://doi.org/10.1109/EDM.2018.8434958
Final published version

Ramin M.H. Iskhakzay
Vladimir Sh Aliev
Vladimir A. Gritsenko

Original language	English
Title of host publication	2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings
Publisher	IEEE Computer Society
Pages	12-15
Number of pages	4
Volume	2018-July
ISBN (Print)	9781538650219
DOIs	https://doi.org/10.1109/EDM.2018.8434958
Publication status	Published - 13 Aug 2018
Event	19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices - Erlagol, Altai, Russian Federation Duration: 29 Jun 2018 → 3 Jul 2018 Conference number: 19

Publication series

Name	International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
Volume	2018-July

Conference

Conference	19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices
Abbreviated title	EDM 2018
Country/Territory	Russian Federation
City	Erlagol, Altai
Period	29.06.2018 → 03.07.2018

Research areas

'Wake up' operation, Ferroelectric memory, Ferroelectricit, Hf(Zr)O structure, Nonvolatile memory

ID: 16246897