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Interplay between electron-hole and impurity scattering in HgTe-based quantum wells. / Snegirev, A. V.; Kovalev, V. M.; Entin, M. V. et al.

In: Physical Review Research, Vol. 7, No. 4, 043169, 14.11.2025.

Research output: Contribution to journal › Article › peer-review

Harvard

Snegirev, AV, Kovalev, VM, Entin, MV, Olshanetsky, EB, Gusev, GM, Mikhailov, NN & Kvon, ZD 2025, 'Interplay between electron-hole and impurity scattering in HgTe-based quantum wells', Physical Review Research, vol. 7, no. 4, 043169. https://doi.org/10.1103/qgrt-x2x5

APA

Snegirev, A. V., Kovalev, V. M., Entin, M. V., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N., & Kvon, Z. D. (2025). Interplay between electron-hole and impurity scattering in HgTe-based quantum wells. Physical Review Research, 7(4), [043169]. https://doi.org/10.1103/qgrt-x2x5

Vancouver

Snegirev AV, Kovalev VM, Entin MV, Olshanetsky EB, Gusev GM, Mikhailov NN et al. Interplay between electron-hole and impurity scattering in HgTe-based quantum wells. Physical Review Research. 2025 Nov 14;7(4):043169. doi: 10.1103/qgrt-x2x5

Author

Snegirev, A. V. ; Kovalev, V. M. ; Entin, M. V. et al. / Interplay between electron-hole and impurity scattering in HgTe-based quantum wells. In: Physical Review Research. 2025 ; Vol. 7, No. 4.

BibTeX

@article{b8aa69b313e840dd8b42265a43395e0b,
title = "Interplay between electron-hole and impurity scattering in HgTe-based quantum wells",
abstract = "A 20-nm-wide (100)-oriented HgTe quantum well (QW) hosts a two-dimensional (2D) semimetal comprising both electrons and holes. In this study, we report that in addition to the previously observed quadratic temperature dependence of resistance, the system also displays an unexpected linear temperature dependence within specific top-gate voltage ranges. To account for this behavior, we extend the existing theoretical framework for temperature-dependent resistance in HgTe QW-based 2D semimetals with a focus on electron-hole scattering at low temperatures. Using the Boltzmann transport equation, we investigate the role of electron-hole interactions in this 2D semimetal. Our calculations reproduce a resistivity temperature dependence that aligns closely with experimental data. These findings establish this system as a robust platform for exploring interaction-limited transport regimes in a two-component plasma, particularly in the presence of disorder.",
author = "Snegirev, {A. V.} and Kovalev, {V. M.} and Entin, {M. V.} and Olshanetsky, {E. B.} and Gusev, {G. M.} and Mikhailov, {N. N.} and Kvon, {Z. D.}",
note = "This work was supported by the “BASIS” Foundation for the Advancement of Theoretical Physics and Mathematics and by the Ministry of Science and Higher Education of the Russian Federation. G.M.G. acknowledges funding from the S{\"a}o Paulo Research Foundation (FAPESP) under Grants No. 2019/16736-2 and No. 2021/12470-8, as well as support from the National Council for Scientific and Technological Development (CNPq, Brazil).",
year = "2025",
month = nov,
day = "14",
doi = "10.1103/qgrt-x2x5",
language = "English",
volume = "7",
journal = "Physical Review Research",
issn = "2643-1564",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Interplay between electron-hole and impurity scattering in HgTe-based quantum wells

AU - Snegirev, A. V.

AU - Kovalev, V. M.

AU - Entin, M. V.

AU - Olshanetsky, E. B.

AU - Gusev, G. M.

AU - Mikhailov, N. N.

AU - Kvon, Z. D.

N1 - This work was supported by the “BASIS” Foundation for the Advancement of Theoretical Physics and Mathematics and by the Ministry of Science and Higher Education of the Russian Federation. G.M.G. acknowledges funding from the Säo Paulo Research Foundation (FAPESP) under Grants No. 2019/16736-2 and No. 2021/12470-8, as well as support from the National Council for Scientific and Technological Development (CNPq, Brazil).

PY - 2025/11/14

Y1 - 2025/11/14

N2 - A 20-nm-wide (100)-oriented HgTe quantum well (QW) hosts a two-dimensional (2D) semimetal comprising both electrons and holes. In this study, we report that in addition to the previously observed quadratic temperature dependence of resistance, the system also displays an unexpected linear temperature dependence within specific top-gate voltage ranges. To account for this behavior, we extend the existing theoretical framework for temperature-dependent resistance in HgTe QW-based 2D semimetals with a focus on electron-hole scattering at low temperatures. Using the Boltzmann transport equation, we investigate the role of electron-hole interactions in this 2D semimetal. Our calculations reproduce a resistivity temperature dependence that aligns closely with experimental data. These findings establish this system as a robust platform for exploring interaction-limited transport regimes in a two-component plasma, particularly in the presence of disorder.

AB - A 20-nm-wide (100)-oriented HgTe quantum well (QW) hosts a two-dimensional (2D) semimetal comprising both electrons and holes. In this study, we report that in addition to the previously observed quadratic temperature dependence of resistance, the system also displays an unexpected linear temperature dependence within specific top-gate voltage ranges. To account for this behavior, we extend the existing theoretical framework for temperature-dependent resistance in HgTe QW-based 2D semimetals with a focus on electron-hole scattering at low temperatures. Using the Boltzmann transport equation, we investigate the role of electron-hole interactions in this 2D semimetal. Our calculations reproduce a resistivity temperature dependence that aligns closely with experimental data. These findings establish this system as a robust platform for exploring interaction-limited transport regimes in a two-component plasma, particularly in the presence of disorder.

UR - https://www.scopus.com/pages/publications/105022454025

UR - https://www.mendeley.com/catalogue/53e4d6d2-2147-3cd1-bb05-03625196e1a7/

U2 - 10.1103/qgrt-x2x5

DO - 10.1103/qgrt-x2x5

M3 - Article

VL - 7

JO - Physical Review Research

JF - Physical Review Research

SN - 2643-1564

IS - 4

M1 - 043169

ER -

ID: 72365094