Influence of growth temperature of KTiOAsO4single crystals on their physicochemical parameters and formation of domain structures

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Influence of growth temperature of KTiOAsO₄single crystals on their physicochemical parameters and formation of domain structures. / Isaenko, L. I.; Eliseev, A. P.; Kolker, D. B. et al.

In: Quantum Electronics, Vol. 50, No. 8, 31.08.2020, p. 788-792.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{5125929b34b74eca83d5029b13df3588,

title = "Influence of growth temperature of KTiOAsO4single crystals on their physicochemical parameters and formation of domain structures",

abstract = "A potassium titanyl arsenate (KTiOAsO4, KTA) crystal 50 × 80 × 60 mm in size has been grown by upgraded Czochralski method from flux (TGGS) with a decrease in temperature from 900 to 770 °C during pulling. It is shown that the spectroscopic properties of the parts of KTA crystals grown at 900 and 770 °C are close, whereas the electrical conductivity of the lowerature (770 °C) KTA part turned out to be an order of magnitude lower than that of the higherature part. Visualisation of the domain structure by second-harmonic generation microscopy revealed a more efficient domain intergrowth (throughout the sample) in the lowerature KTA, which is important for forming a regular domain structure (RDS) in a KTA-based nonlinear optical element. It is established that the quantum efficiency of parametric generation of light in the RDS formed in lowerature KTA is several times higher than in the case of higherature KTA. The results obtained are important for optimising RDS parameters.",

keywords = "potassium arsenate titanyl crystal, absorption spectra, regular domain structures, parametric generation of light, PERIODICALLY POLED KTIOASO4, KTP, KTIOPO4",

author = "Isaenko, {L. I.} and Eliseev, {A. P.} and Kolker, {D. B.} and Vedenyapin, {V. N.} and Zhurkov, {S. A.} and Erushin, {E. Yu} and Kostyukova, {N. Yu} and Boiko, {A. A.} and Shur, {V. Ya} and Akhmathanov, {A. R.} and Chuvakova, {M. A.}",

year = "2020",

month = aug,

day = "31",

doi = "10.1070/QEL17265",

language = "English",

volume = "50",

pages = "788--792",

journal = "Quantum Electronics",

issn = "1063-7818",

publisher = "Turpion Ltd.",

number = "8",

}

RIS

TY - JOUR

T1 - Influence of growth temperature of KTiOAsO4single crystals on their physicochemical parameters and formation of domain structures

AU - Isaenko, L. I.

AU - Eliseev, A. P.

AU - Kolker, D. B.

AU - Vedenyapin, V. N.

AU - Zhurkov, S. A.

AU - Erushin, E. Yu

AU - Kostyukova, N. Yu

AU - Boiko, A. A.

AU - Shur, V. Ya

AU - Akhmathanov, A. R.

AU - Chuvakova, M. A.

PY - 2020/8/31

Y1 - 2020/8/31

N2 - A potassium titanyl arsenate (KTiOAsO4, KTA) crystal 50 × 80 × 60 mm in size has been grown by upgraded Czochralski method from flux (TGGS) with a decrease in temperature from 900 to 770 °C during pulling. It is shown that the spectroscopic properties of the parts of KTA crystals grown at 900 and 770 °C are close, whereas the electrical conductivity of the lowerature (770 °C) KTA part turned out to be an order of magnitude lower than that of the higherature part. Visualisation of the domain structure by second-harmonic generation microscopy revealed a more efficient domain intergrowth (throughout the sample) in the lowerature KTA, which is important for forming a regular domain structure (RDS) in a KTA-based nonlinear optical element. It is established that the quantum efficiency of parametric generation of light in the RDS formed in lowerature KTA is several times higher than in the case of higherature KTA. The results obtained are important for optimising RDS parameters.

AB - A potassium titanyl arsenate (KTiOAsO4, KTA) crystal 50 × 80 × 60 mm in size has been grown by upgraded Czochralski method from flux (TGGS) with a decrease in temperature from 900 to 770 °C during pulling. It is shown that the spectroscopic properties of the parts of KTA crystals grown at 900 and 770 °C are close, whereas the electrical conductivity of the lowerature (770 °C) KTA part turned out to be an order of magnitude lower than that of the higherature part. Visualisation of the domain structure by second-harmonic generation microscopy revealed a more efficient domain intergrowth (throughout the sample) in the lowerature KTA, which is important for forming a regular domain structure (RDS) in a KTA-based nonlinear optical element. It is established that the quantum efficiency of parametric generation of light in the RDS formed in lowerature KTA is several times higher than in the case of higherature KTA. The results obtained are important for optimising RDS parameters.

KW - potassium arsenate titanyl crystal

KW - absorption spectra

KW - regular domain structures

KW - parametric generation of light

KW - PERIODICALLY POLED KTIOASO4

KW - KTP

KW - KTIOPO4

UR - http://www.scopus.com/inward/record.url?scp=85091751372&partnerID=8YFLogxK

U2 - 10.1070/QEL17265

DO - 10.1070/QEL17265

M3 - Article

AN - SCOPUS:85091751372

VL - 50

SP - 788

EP - 792

JO - Quantum Electronics

JF - Quantum Electronics

SN - 1063-7818

IS - 8

ER -

ID: 25614320