Research output: Contribution to journal › Article › peer-review
Indium-Assisted Plasma-Enhanced Low-Temperature Growth of Silicon Oxide Nanowires. / Khmel, Sergey; Baranov, Evgeniy; Barsukov, Andrey et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 215, No. 12, 1700749, 20.06.2018.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Indium-Assisted Plasma-Enhanced Low-Temperature Growth of Silicon Oxide Nanowires
AU - Khmel, Sergey
AU - Baranov, Evgeniy
AU - Barsukov, Andrey
AU - Zamchiy, Alexandr
AU - Zaikovskii, Alexey
AU - Maximovskiy, Evgeniy
AU - Gulyaev, Dmitry
AU - Zhuravlev, Konstantin
PY - 2018/6/20
Y1 - 2018/6/20
N2 - The nanowires of the silicon oxide SiOx (x ≤ 2) are synthesized on an indium catalyst by the gas-jet electron beam plasma chemical vapor deposition (GJ EBP CVD) method using a monosilane-argon-hydrogen mixture with the simultaneous supply of the oxygen into the vacuum chamber. The arrays of the aligned microropes (bundles) of nanowires are formed at the substrate temperatures of 200–335 °С. At the temperature of 160 °С the cocoon-like structures of SiOx nanowires are synthesized. The obtained results are explained within the synthesis model suggested previously. The Fourier transform infrared (FTIR) transmittance spectra are recorded to study the chemical composition of the nanowires. It is shown that the nanowires synthesized at temperatures of 200–335 °С consist of SiOx with x = 1.93 ± 0.04. The arrays of the oriented microropes of the SiOx nanowires exhibit the intense photoluminescence at a room temperature with a maximum in a range of the energies from 2 to 3 eV. The photoluminescence spectra of the oriented microropes synthesized on silicon substrates with the indium catalyst are shifted toward lower energies from 2.7–2.8 to 2.4–2.5 eV at the changing growth temperatures from 200 to 335 °C.
AB - The nanowires of the silicon oxide SiOx (x ≤ 2) are synthesized on an indium catalyst by the gas-jet electron beam plasma chemical vapor deposition (GJ EBP CVD) method using a monosilane-argon-hydrogen mixture with the simultaneous supply of the oxygen into the vacuum chamber. The arrays of the aligned microropes (bundles) of nanowires are formed at the substrate temperatures of 200–335 °С. At the temperature of 160 °С the cocoon-like structures of SiOx nanowires are synthesized. The obtained results are explained within the synthesis model suggested previously. The Fourier transform infrared (FTIR) transmittance spectra are recorded to study the chemical composition of the nanowires. It is shown that the nanowires synthesized at temperatures of 200–335 °С consist of SiOx with x = 1.93 ± 0.04. The arrays of the oriented microropes of the SiOx nanowires exhibit the intense photoluminescence at a room temperature with a maximum in a range of the energies from 2 to 3 eV. The photoluminescence spectra of the oriented microropes synthesized on silicon substrates with the indium catalyst are shifted toward lower energies from 2.7–2.8 to 2.4–2.5 eV at the changing growth temperatures from 200 to 335 °C.
KW - indium catalyst
KW - nanowires
KW - photoluminescence
KW - plasma-enhanced chemical vapor deposition
KW - silicon oxide
KW - CRYSTALLIZATION
KW - SIOX FILMS
KW - SOLAR-CELLS
KW - PHOTOLUMINESCENCE
KW - CHEMICAL-VAPOR-DEPOSITION
KW - OPTICAL-PROPERTIES
KW - NANOPARTICLES
KW - LUMINESCENCE
KW - SPECTROSCOPY
KW - CVD METHOD
UR - http://www.scopus.com/inward/record.url?scp=85042458573&partnerID=8YFLogxK
U2 - 10.1002/pssa.201700749
DO - 10.1002/pssa.201700749
M3 - Article
AN - SCOPUS:85042458573
VL - 215
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 1862-6300
IS - 12
M1 - 1700749
ER -
ID: 14102367