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In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr. / Kocsis, Mátyás; Zheliuk, Oleksandr; Makk, Péter et al.

In: Physical Review Research, Vol. 3, No. 3, 033253, 09.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Kocsis, M, Zheliuk, O, Makk, P, Tóvári, E, Kun, P, Tereshchenko, OE, Kokh, KA, Taniguchi, T, Watanabe, K, Ye, J & Csonka, S 2021, 'In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr', Physical Review Research, vol. 3, no. 3, 033253. https://doi.org/10.1103/PhysRevResearch.3.033253

APA

Kocsis, M., Zheliuk, O., Makk, P., Tóvári, E., Kun, P., Tereshchenko, O. E., Kokh, K. A., Taniguchi, T., Watanabe, K., Ye, J., & Csonka, S. (2021). In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr. Physical Review Research, 3(3), [033253]. https://doi.org/10.1103/PhysRevResearch.3.033253

Vancouver

Kocsis M, Zheliuk O, Makk P, Tóvári E, Kun P, Tereshchenko OE et al. In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr. Physical Review Research. 2021 Sept;3(3):033253. doi: 10.1103/PhysRevResearch.3.033253

Author

Kocsis, Mátyás ; Zheliuk, Oleksandr ; Makk, Péter et al. / In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr. In: Physical Review Research. 2021 ; Vol. 3, No. 3.

BibTeX

@article{e107c55ace1c4e21b2d163e1462cba07,
title = "In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr",
abstract = "Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.",
author = "M{\'a}ty{\'a}s Kocsis and Oleksandr Zheliuk and P{\'e}ter Makk and Endre T{\'o}v{\'a}ri and P{\'e}ter Kun and Tereshchenko, {Oleg Evgenevich} and Kokh, {Konstantin Aleksandrovich} and Takashi Taniguchi and Kenji Watanabe and Jianting Ye and Szabolcs Csonka",
note = "Publisher Copyright: {\textcopyright} 2021 authors.",
year = "2021",
month = sep,
doi = "10.1103/PhysRevResearch.3.033253",
language = "English",
volume = "3",
journal = "Physical Review Research",
issn = "2643-1564",
publisher = "American Physical Society",
number = "3",

}

RIS

TY - JOUR

T1 - In situ tuning of symmetry-breaking-induced nonreciprocity in the giant-Rashba semiconductor BiTeBr

AU - Kocsis, Mátyás

AU - Zheliuk, Oleksandr

AU - Makk, Péter

AU - Tóvári, Endre

AU - Kun, Péter

AU - Tereshchenko, Oleg Evgenevich

AU - Kokh, Konstantin Aleksandrovich

AU - Taniguchi, Takashi

AU - Watanabe, Kenji

AU - Ye, Jianting

AU - Csonka, Szabolcs

N1 - Publisher Copyright: © 2021 authors.

PY - 2021/9

Y1 - 2021/9

N2 - Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.

AB - Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.

UR - http://www.scopus.com/inward/record.url?scp=85115892221&partnerID=8YFLogxK

U2 - 10.1103/PhysRevResearch.3.033253

DO - 10.1103/PhysRevResearch.3.033253

M3 - Article

AN - SCOPUS:85115892221

VL - 3

JO - Physical Review Research

JF - Physical Review Research

SN - 2643-1564

IS - 3

M1 - 033253

ER -

ID: 34339243