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High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy. / Ponomarev, S. A.; Rogilo, D. I.; Nasimov, D. A. et al.

In: Journal of Crystal Growth, Vol. 628, 127545, 15.02.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Ponomarev, SA, Rogilo, DI, Nasimov, DA, Kokh, KA, Sheglov, DV & Latyshev, AV 2024, 'High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy', Journal of Crystal Growth, vol. 628, 127545. https://doi.org/10.1016/j.jcrysgro.2023.127545

APA

Ponomarev, S. A., Rogilo, D. I., Nasimov, D. A., Kokh, K. A., Sheglov, D. V., & Latyshev, A. V. (2024). High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy. Journal of Crystal Growth, 628, [127545]. https://doi.org/10.1016/j.jcrysgro.2023.127545

Vancouver

Ponomarev SA, Rogilo DI, Nasimov DA, Kokh KA, Sheglov DV, Latyshev AV. High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy. Journal of Crystal Growth. 2024 Feb 15;628:127545. doi: 10.1016/j.jcrysgro.2023.127545

Author

Ponomarev, S. A. ; Rogilo, D. I. ; Nasimov, D. A. et al. / High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy. In: Journal of Crystal Growth. 2024 ; Vol. 628.

BibTeX

@article{6ccaab178942490bbace0b0721566f2a,
title = "High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy",
abstract = "Using in situ reflection electron microscopy, transformations of Bi2Se3(0001) surface during In deposition have been studied. We first report the formation of an In-induced surface phase that precedes nucleation and growth of a layered In2Se3 at substrate temperatures around 400 °C. The surface phase nucleates on Bi2Se3(0001) terraces as islands having high In content and a height of 0.4 nm. During continuous In deposition, the area of these islands increases and suppresses Bi2Se3 sublimation from the regions covered by the In-induced surface phase. This locally suppressed sublimation and sublimation-induced ascending motion of Bi2Se3 atomic steps create multilayer triangular star-shaped islands.",
keywords = "A1. Adsorption, A1. Desorption, A1. Nucleation, A1. Surface processes, A3. Molecular beam epitaxy, B3. Selenides",
author = "Ponomarev, {S. A.} and Rogilo, {D. I.} and Nasimov, {D. A.} and Kokh, {K. A.} and Sheglov, {D. V.} and Latyshev, {A. V.}",
note = "This research was performed on the equipment of CKP Nanostruktury. In situ experiments were financially supported by Russian Science Foundation (grant number 22-72-10124 ). SEM investigations were financially supported by Russian Science Foundation (grant number 19-72-30023).",
year = "2024",
month = feb,
day = "15",
doi = "10.1016/j.jcrysgro.2023.127545",
language = "English",
volume = "628",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy

AU - Ponomarev, S. A.

AU - Rogilo, D. I.

AU - Nasimov, D. A.

AU - Kokh, K. A.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

N1 - This research was performed on the equipment of CKP Nanostruktury. In situ experiments were financially supported by Russian Science Foundation (grant number 22-72-10124 ). SEM investigations were financially supported by Russian Science Foundation (grant number 19-72-30023).

PY - 2024/2/15

Y1 - 2024/2/15

N2 - Using in situ reflection electron microscopy, transformations of Bi2Se3(0001) surface during In deposition have been studied. We first report the formation of an In-induced surface phase that precedes nucleation and growth of a layered In2Se3 at substrate temperatures around 400 °C. The surface phase nucleates on Bi2Se3(0001) terraces as islands having high In content and a height of 0.4 nm. During continuous In deposition, the area of these islands increases and suppresses Bi2Se3 sublimation from the regions covered by the In-induced surface phase. This locally suppressed sublimation and sublimation-induced ascending motion of Bi2Se3 atomic steps create multilayer triangular star-shaped islands.

AB - Using in situ reflection electron microscopy, transformations of Bi2Se3(0001) surface during In deposition have been studied. We first report the formation of an In-induced surface phase that precedes nucleation and growth of a layered In2Se3 at substrate temperatures around 400 °C. The surface phase nucleates on Bi2Se3(0001) terraces as islands having high In content and a height of 0.4 nm. During continuous In deposition, the area of these islands increases and suppresses Bi2Se3 sublimation from the regions covered by the In-induced surface phase. This locally suppressed sublimation and sublimation-induced ascending motion of Bi2Se3 atomic steps create multilayer triangular star-shaped islands.

KW - A1. Adsorption

KW - A1. Desorption

KW - A1. Nucleation

KW - A1. Surface processes

KW - A3. Molecular beam epitaxy

KW - B3. Selenides

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85180546819&origin=inward&txGid=4ff6b8e108a3611836fc3978167675aa

UR - https://www.mendeley.com/catalogue/334ac947-8013-3e03-bc43-7f257d2f30f5/

U2 - 10.1016/j.jcrysgro.2023.127545

DO - 10.1016/j.jcrysgro.2023.127545

M3 - Article

VL - 628

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 127545

ER -

ID: 61150206