Standard

High-quality single-crystal diamond-graphite-diamond membranes and devices. / Popov, V. P.; Gutakovskii, A. K.; Antonov, V. A. et al.

In: International journal of nanotechnology, Vol. 12, No. 3-4, 2015, p. 226-237.

Research output: Contribution to journal › Article › peer-review

Harvard

Popov, VP, Gutakovskii, AK, Antonov, VA, Podlesnyi, SN, Kupriyanov, IN, Palyanov, YN & Rubanov, SV 2015, 'High-quality single-crystal diamond-graphite-diamond membranes and devices', International journal of nanotechnology, vol. 12, no. 3-4, pp. 226-237. https://doi.org/10.1504/IJNT.2015.067208

APA

Popov, V. P., Gutakovskii, A. K., Antonov, V. A., Podlesnyi, S. N., Kupriyanov, I. N., Palyanov, Y. N., & Rubanov, S. V. (2015). High-quality single-crystal diamond-graphite-diamond membranes and devices. International journal of nanotechnology, 12(3-4), 226-237. https://doi.org/10.1504/IJNT.2015.067208

Vancouver

Popov VP, Gutakovskii AK, Antonov VA, Podlesnyi SN, Kupriyanov IN, Palyanov YN et al. High-quality single-crystal diamond-graphite-diamond membranes and devices. International journal of nanotechnology. 2015;12(3-4):226-237. doi: 10.1504/IJNT.2015.067208

Author

Popov, V. P. ; Gutakovskii, A. K. ; Antonov, V. A. et al. / High-quality single-crystal diamond-graphite-diamond membranes and devices. In: International journal of nanotechnology. 2015 ; Vol. 12, No. 3-4. pp. 226-237.

BibTeX

@article{74c596cf5a4c4b92b6906562eec98e8b,
title = "High-quality single-crystal diamond-graphite-diamond membranes and devices",
abstract = "Implantation of hydrogen ions into synthetic single-crystal diamonds followed by subsequent high-temperature annealing and anodic etching of implanted crystals was used to obtain structurally perfect 30-nm thick diamond membranes with optically active NV- centres (area up to several tens mm(2)) appropriate for use in integral magnetometers and quantum-informatics optoelectronic circuits.",
keywords = "implantation of hydrogen ions, high-pressure-high-temperature-annealing, anodic etching, single-crystal diamond-graphite-diamond layers and membranes, optically active NV- centres, HYDROGEN IMPLANTATION, FABRICATION, NITROGEN, LAYERS",
author = "Popov, {V. P.} and Gutakovskii, {A. K.} and Antonov, {V. A.} and Podlesnyi, {S. N.} and Kupriyanov, {I. N.} and Palyanov, {Yu N.} and Rubanov, {S. V.}",
year = "2015",
doi = "10.1504/IJNT.2015.067208",
language = "English",
volume = "12",
pages = "226--237",
journal = "International journal of nanotechnology",
issn = "1475-7435",
publisher = "Inderscience Enterprises Ltd",
number = "3-4",

}

RIS

TY - JOUR

T1 - High-quality single-crystal diamond-graphite-diamond membranes and devices

AU - Popov, V. P.

AU - Gutakovskii, A. K.

AU - Antonov, V. A.

AU - Podlesnyi, S. N.

AU - Kupriyanov, I. N.

AU - Palyanov, Yu N.

AU - Rubanov, S. V.

PY - 2015

Y1 - 2015

N2 - Implantation of hydrogen ions into synthetic single-crystal diamonds followed by subsequent high-temperature annealing and anodic etching of implanted crystals was used to obtain structurally perfect 30-nm thick diamond membranes with optically active NV- centres (area up to several tens mm(2)) appropriate for use in integral magnetometers and quantum-informatics optoelectronic circuits.

AB - Implantation of hydrogen ions into synthetic single-crystal diamonds followed by subsequent high-temperature annealing and anodic etching of implanted crystals was used to obtain structurally perfect 30-nm thick diamond membranes with optically active NV- centres (area up to several tens mm(2)) appropriate for use in integral magnetometers and quantum-informatics optoelectronic circuits.

KW - implantation of hydrogen ions

KW - high-pressure-high-temperature-annealing

KW - anodic etching

KW - single-crystal diamond-graphite-diamond layers and membranes

KW - optically active NV- centres

KW - HYDROGEN IMPLANTATION

KW - FABRICATION

KW - NITROGEN

KW - LAYERS

U2 - 10.1504/IJNT.2015.067208

DO - 10.1504/IJNT.2015.067208

M3 - Article

VL - 12

SP - 226

EP - 237

JO - International journal of nanotechnology

JF - International journal of nanotechnology

SN - 1475-7435

IS - 3-4

ER -

ID: 25728629