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High-pressure synthesis and characterization of Sn-doped single crystal diamond. / Palyanov, Yuri N.; Kupriyanov, Igor N.; Borzdov, Yuri M.

In: Carbon, Vol. 143, 01.03.2019, p. 769-775.

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Palyanov YN, Kupriyanov IN, Borzdov YM. High-pressure synthesis and characterization of Sn-doped single crystal diamond. Carbon. 2019 Mar 1;143:769-775. doi: 10.1016/j.carbon.2018.11.084

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Palyanov, Yuri N. ; Kupriyanov, Igor N. ; Borzdov, Yuri M. / High-pressure synthesis and characterization of Sn-doped single crystal diamond. In: Carbon. 2019 ; Vol. 143. pp. 769-775.

BibTeX

@article{cfa18d163b6d4679b53fd42813229f6a,
title = "High-pressure synthesis and characterization of Sn-doped single crystal diamond",
abstract = "Development of new routes for fabrication of diamond containing color centers with specific optical and magnetic properties is important for its employment in many innovative applications such as the emerging quantum technologies. Here we report a systematic study on the high-pressure synthesis of diamond from various tin-containing systems aimed at establishing growth conditions favorable for the incorporation of Sn atoms in crystallized diamonds with the formation of the tin-vacancy (Sn–V) color centers. Synthesis experiments are performed at 6.3–7.5 GPa and 1400–1900 °C using solvent-catalysts of three different types: Fe–Sn–Al, Sn-(Ti, Al, Zr) and Sn–Mg. We established the main features of diamond crystallization from these catalysts and determined photoluminescence characteristics of the synthesized diamonds. It is found that over the range of the P-T conditions and catalyst compositions employed in the study, the Sn–Mg–C system is a most effective medium for growing Sn-doped single crystal diamond. We show that with the approach developed in the study it is possible to fabricate diamond single crystals with sizes from ∼50 μm to ∼1 mm containing high-quality Sn–V color centers with narrow zero-phonon lines.",
keywords = "VACANCY COLOR-CENTER, CENTERS, GROWTH, CRYSTALLIZATION, SYSTEM",
author = "Palyanov, {Yuri N.} and Kupriyanov, {Igor N.} and Borzdov, {Yuri M.}",
year = "2019",
month = mar,
day = "1",
doi = "10.1016/j.carbon.2018.11.084",
language = "English",
volume = "143",
pages = "769--775",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - High-pressure synthesis and characterization of Sn-doped single crystal diamond

AU - Palyanov, Yuri N.

AU - Kupriyanov, Igor N.

AU - Borzdov, Yuri M.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Development of new routes for fabrication of diamond containing color centers with specific optical and magnetic properties is important for its employment in many innovative applications such as the emerging quantum technologies. Here we report a systematic study on the high-pressure synthesis of diamond from various tin-containing systems aimed at establishing growth conditions favorable for the incorporation of Sn atoms in crystallized diamonds with the formation of the tin-vacancy (Sn–V) color centers. Synthesis experiments are performed at 6.3–7.5 GPa and 1400–1900 °C using solvent-catalysts of three different types: Fe–Sn–Al, Sn-(Ti, Al, Zr) and Sn–Mg. We established the main features of diamond crystallization from these catalysts and determined photoluminescence characteristics of the synthesized diamonds. It is found that over the range of the P-T conditions and catalyst compositions employed in the study, the Sn–Mg–C system is a most effective medium for growing Sn-doped single crystal diamond. We show that with the approach developed in the study it is possible to fabricate diamond single crystals with sizes from ∼50 μm to ∼1 mm containing high-quality Sn–V color centers with narrow zero-phonon lines.

AB - Development of new routes for fabrication of diamond containing color centers with specific optical and magnetic properties is important for its employment in many innovative applications such as the emerging quantum technologies. Here we report a systematic study on the high-pressure synthesis of diamond from various tin-containing systems aimed at establishing growth conditions favorable for the incorporation of Sn atoms in crystallized diamonds with the formation of the tin-vacancy (Sn–V) color centers. Synthesis experiments are performed at 6.3–7.5 GPa and 1400–1900 °C using solvent-catalysts of three different types: Fe–Sn–Al, Sn-(Ti, Al, Zr) and Sn–Mg. We established the main features of diamond crystallization from these catalysts and determined photoluminescence characteristics of the synthesized diamonds. It is found that over the range of the P-T conditions and catalyst compositions employed in the study, the Sn–Mg–C system is a most effective medium for growing Sn-doped single crystal diamond. We show that with the approach developed in the study it is possible to fabricate diamond single crystals with sizes from ∼50 μm to ∼1 mm containing high-quality Sn–V color centers with narrow zero-phonon lines.

KW - VACANCY COLOR-CENTER

KW - CENTERS

KW - GROWTH

KW - CRYSTALLIZATION

KW - SYSTEM

UR - http://www.scopus.com/inward/record.url?scp=85059301766&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2018.11.084

DO - 10.1016/j.carbon.2018.11.084

M3 - Article

AN - SCOPUS:85059301766

VL - 143

SP - 769

EP - 775

JO - Carbon

JF - Carbon

SN - 0008-6223

ER -

ID: 18068799