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Heterointerface point defects in GaN/AlN quantum wells

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1117/1.JNP.12.043512
Final published version

Yahor V. Lebiadok
Alena A. Razumets
Tatyana V. Bezyazychnaya
Ivan A. Aleksandrov
Konstantin S. Zhuravlev

Original language	English
Article number	043512
Number of pages	7
Journal	Journal of Nanophotonics
Volume	12
Issue number	4
DOIs	https://doi.org/10.1117/1.JNP.12.043512
Publication status	Published - 1 Oct 2018

OECD FOS+WOS

Research areas

AlN, GaN, Interface, Point defect, GAN, interface, point defect

ID: 15965417