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Gurzhi effect in point contacts in GaAs. / Сарыпов, Даниил Игоревич; Похабов, Дмитрий Александрович; Погосов, Артур Григорьевич et al.

In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Vol. 17, No. 1.1, 14, 05.2024, p. 89-95.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Сарыпов, ДИ, Похабов, ДА, Погосов, АГ, Егоров, ДА, Жданов, ЕЮ & Бакаров, АК 2024, 'Gurzhi effect in point contacts in GaAs', St. Petersburg State Polytechnical University Journal: Physics and Mathematics, vol. 17, no. 1.1, 14, pp. 89-95. https://doi.org/10.18721/JPM.171.114

APA

Сарыпов, Д. И., Похабов, Д. А., Погосов, А. Г., Егоров, Д. А., Жданов, Е. Ю., & Бакаров, А. К. (2024). Gurzhi effect in point contacts in GaAs. St. Petersburg State Polytechnical University Journal: Physics and Mathematics, 17(1.1), 89-95. [14]. https://doi.org/10.18721/JPM.171.114

Vancouver

Сарыпов ДИ, Похабов ДА, Погосов АГ, Егоров ДА, Жданов ЕЮ, Бакаров АК. Gurzhi effect in point contacts in GaAs. St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2024 May;17(1.1):89-95. 14. doi: 10.18721/JPM.171.114

Author

Сарыпов, Даниил Игоревич ; Похабов, Дмитрий Александрович ; Погосов, Артур Григорьевич et al. / Gurzhi effect in point contacts in GaAs. In: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2024 ; Vol. 17, No. 1.1. pp. 89-95.

BibTeX

@article{c02233090a574fd3a7e034b64454f67e,
title = "Gurzhi effect in point contacts in GaAs",
abstract = "Hydrodynamic electron transport through point contacts of different widths in two-dimensional electron gas in GaAs/AlGaAs heterostructure is studied. Effect Gurzhi, i.e., minimum in the temperature dependence of the point contact resistance, corresponding to the conductance exceeding the ballistic limit, is experimentally observed. The minimum is shown to be observed in case when electron-electron scattering length is comparable with the point contact width. Under this condition, electrons act as viscous fluid, that leads to the resistance reduction. The experimental data including the width dependence are consistent with the theoretical prediction of the viscous contribution to the point contact conductance.",
keywords = "electron hydrodynamics, electron-electron scattering, viscous electron fluid",
author = "Сарыпов, {Даниил Игоревич} and Похабов, {Дмитрий Александрович} and Погосов, {Артур Григорьевич} and Егоров, {Дмитрий Александрович} and Жданов, {Евгений Юрьевич} and Бакаров, {Асхат Климович}",
note = "The study was funded by the Russian Science Foundation (project 22-12-00343).",
year = "2024",
month = may,
doi = "10.18721/JPM.171.114",
language = "English",
volume = "17",
pages = "89--95",
journal = "St. Petersburg State Polytechnical University Journal: Physics and Mathematics",
issn = "2618-8686",
number = "1.1",

}

RIS

TY - JOUR

T1 - Gurzhi effect in point contacts in GaAs

AU - Сарыпов, Даниил Игоревич

AU - Похабов, Дмитрий Александрович

AU - Погосов, Артур Григорьевич

AU - Егоров, Дмитрий Александрович

AU - Жданов, Евгений Юрьевич

AU - Бакаров, Асхат Климович

N1 - The study was funded by the Russian Science Foundation (project 22-12-00343).

PY - 2024/5

Y1 - 2024/5

N2 - Hydrodynamic electron transport through point contacts of different widths in two-dimensional electron gas in GaAs/AlGaAs heterostructure is studied. Effect Gurzhi, i.e., minimum in the temperature dependence of the point contact resistance, corresponding to the conductance exceeding the ballistic limit, is experimentally observed. The minimum is shown to be observed in case when electron-electron scattering length is comparable with the point contact width. Under this condition, electrons act as viscous fluid, that leads to the resistance reduction. The experimental data including the width dependence are consistent with the theoretical prediction of the viscous contribution to the point contact conductance.

AB - Hydrodynamic electron transport through point contacts of different widths in two-dimensional electron gas in GaAs/AlGaAs heterostructure is studied. Effect Gurzhi, i.e., minimum in the temperature dependence of the point contact resistance, corresponding to the conductance exceeding the ballistic limit, is experimentally observed. The minimum is shown to be observed in case when electron-electron scattering length is comparable with the point contact width. Under this condition, electrons act as viscous fluid, that leads to the resistance reduction. The experimental data including the width dependence are consistent with the theoretical prediction of the viscous contribution to the point contact conductance.

KW - electron hydrodynamics

KW - electron-electron scattering

KW - viscous electron fluid

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85196955426&origin=inward&txGid=1f378f4953829aec675b028d9d7e04ee

UR - https://www.mendeley.com/catalogue/85d87ace-af44-3997-9c2e-30c30404fb69/

U2 - 10.18721/JPM.171.114

DO - 10.18721/JPM.171.114

M3 - Conference article

VL - 17

SP - 89

EP - 95

JO - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

JF - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

SN - 2618-8686

IS - 1.1

M1 - 14

ER -

ID: 60559574