TY - JOUR

T1 - Guided-mode resonance in periodic surface textures on Si thin films induced by nanosecond laser irradiation

AU - Kim, Minyeong

AU - Kang, Min Jin

AU - Hwang, Eui Sun

AU - Prudnikov, Oleg N.

AU - Cheong, Byoung Ho

N1 - Funding Information: This work was supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and financial resources were provided by the Ministry of Trade, Industry and Energy , Republic of Korea (No. 20204030200070 ). Funding Information: This work was supported by the ?Human Resources Program in Energy Technology? of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and financial resources were provided by the Ministry of Trade, Industry and Energy, Republic of Korea (No. 20204030200070). Publisher Copyright: © 2021 Elsevier B.V. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/7

Y1 - 2021/7

N2 - Laser-crystallization processes to convert amorphous-Si to poly-crystalline-Si are attracted considerable attention owing to their industrial applications, such as in active matrix organic light-emitting diode displays (AMOLEDs) and photovoltaic devices and general scientific interest. Multiple irradiation sequences were conducted with a 355 nm UV laser on amorphous-Si (40, 50, and 60 nm)/oxide(300 nm) layers on glass substrates. The resultant periodic surface textures on Si thin layers were characterized by resonance peaks in the transmittance spectra, depending on the polarization of the normal-incident light. By modeling the periodic textures as 1D linear gratings, the variations in peak intensities and positions were analyzed with respect to Si-layer thickness using the guided-mode resonance theory. In the case of transverse electric polarization, the electric field generated at resonance was entirely concentrated in the Si layer, leading to a red-shift with an increase in Si-layer thickness. Meanwhile, with transverse magnetic polarization, the magnetic field generated at resonance was mainly localized within the Si layer, but was partially distributed in the lower oxide layer when the Si-layer thickness was less than 45 nm and highly concentrated in the Si layer at Si-layer thicknesses greater than 45 nm. These results were consistent with the measured ripple positions and intensities. Thus, we propose that the observed resonance peaks can be used to characterize the surface ripples generated by laser crystallization, for e.g., in optical sensor devices on flexible substrates.

AB - Laser-crystallization processes to convert amorphous-Si to poly-crystalline-Si are attracted considerable attention owing to their industrial applications, such as in active matrix organic light-emitting diode displays (AMOLEDs) and photovoltaic devices and general scientific interest. Multiple irradiation sequences were conducted with a 355 nm UV laser on amorphous-Si (40, 50, and 60 nm)/oxide(300 nm) layers on glass substrates. The resultant periodic surface textures on Si thin layers were characterized by resonance peaks in the transmittance spectra, depending on the polarization of the normal-incident light. By modeling the periodic textures as 1D linear gratings, the variations in peak intensities and positions were analyzed with respect to Si-layer thickness using the guided-mode resonance theory. In the case of transverse electric polarization, the electric field generated at resonance was entirely concentrated in the Si layer, leading to a red-shift with an increase in Si-layer thickness. Meanwhile, with transverse magnetic polarization, the magnetic field generated at resonance was mainly localized within the Si layer, but was partially distributed in the lower oxide layer when the Si-layer thickness was less than 45 nm and highly concentrated in the Si layer at Si-layer thicknesses greater than 45 nm. These results were consistent with the measured ripple positions and intensities. Thus, we propose that the observed resonance peaks can be used to characterize the surface ripples generated by laser crystallization, for e.g., in optical sensor devices on flexible substrates.

KW - Guided mode resonance

KW - Laser annealing

KW - Laser-induced periodic surface structures

KW - Low temperature poly-silicon

KW - Rigorous coupled-wave analysis

KW - Surface ripples

UR - http://www.scopus.com/inward/record.url?scp=85104381120&partnerID=8YFLogxK

U2 - 10.1016/j.photonics.2021.100923

DO - 10.1016/j.photonics.2021.100923

M3 - Article

AN - SCOPUS:85104381120

VL - 45

JO - Photonics and Nanostructures - Fundamentals and Applications

JF - Photonics and Nanostructures - Fundamentals and Applications

SN - 1569-4410

M1 - 100923

ER -