TY - JOUR

T1 - Growth mechanism of periodic-structured mos2 by transmission electron microscopy

AU - Mukundan, Arvind

AU - Tsao, Yu Ming

AU - Artemkina, Sofya B.

AU - Fedorov, Vladimir E.

AU - Wang, Hsiang Chen

N1 - Funding Information: Funding: This research was supported by the Ministry of Science and Technology, The Republic of China, under grants MOST 105-2923-E-194-003 MY3, 108-2823-8-194-002, 109-2622-8-194-001-TE1, 109-2622-8-194-007, and 110-2634-F-194-006. This work was financially/partially supported by the Advanced Institute of Manufacturing with High-tech Innovations and the Center for Innovative Research on Aging Society from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2022/1/1

Y1 - 2022/1/1

N2 - Molybdenum disulfide (MoS2) was grown on a laser-processed periodic-hole sapphire substrate through chemical vapor deposition. The main purpose was to investigate the mechanism of MoS2 growth in substrate with a periodic structure. By controlling the amount and position of the precursor, adjusting the growth temperature and time, and setting the flow rate of argon gas, MoS2 grew in the region of the periodic holes. A series of various growth layer analyses of MoS2 were then confirmed by Raman spectroscopy, photoluminescence spectroscopy, and atomic force microscopy. Finally, the growth mechanism was studied by transmission electron microscopy (TEM). The experimental results show that in the appropriate environment, MoS2 can be successfully grown on substrate with periodic holes, and the number of growth layers can be determined through measurements. By observing the growth mechanism, composition analysis, and selected area electron diffraction diagram by TEM, we comprehensively understand the growth phenomenon. The results of this research can serve as a reference for the large-scale periodic growth of MoS2. The production of periodic structures by laser drilling is advantageous, as it is relatively simpler than other methods.

AB - Molybdenum disulfide (MoS2) was grown on a laser-processed periodic-hole sapphire substrate through chemical vapor deposition. The main purpose was to investigate the mechanism of MoS2 growth in substrate with a periodic structure. By controlling the amount and position of the precursor, adjusting the growth temperature and time, and setting the flow rate of argon gas, MoS2 grew in the region of the periodic holes. A series of various growth layer analyses of MoS2 were then confirmed by Raman spectroscopy, photoluminescence spectroscopy, and atomic force microscopy. Finally, the growth mechanism was studied by transmission electron microscopy (TEM). The experimental results show that in the appropriate environment, MoS2 can be successfully grown on substrate with periodic holes, and the number of growth layers can be determined through measurements. By observing the growth mechanism, composition analysis, and selected area electron diffraction diagram by TEM, we comprehensively understand the growth phenomenon. The results of this research can serve as a reference for the large-scale periodic growth of MoS2. The production of periodic structures by laser drilling is advantageous, as it is relatively simpler than other methods.

KW - Chemical vapor deposition

KW - Growth mechanism of MoS

KW - Molybdenum disulfide (MoS)

KW - Periodic growth of MoS

UR - http://www.scopus.com/inward/record.url?scp=85122002504&partnerID=8YFLogxK

U2 - 10.3390/nano12010135

DO - 10.3390/nano12010135

M3 - Article

C2 - 35010085

AN - SCOPUS:85122002504

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 1

M1 - 135

ER -