Standard

Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates. / Rudin, S. A.; Zinovyev, V. A.; Smagina, Zh V. et al.

In: Journal of Crystal Growth, Vol. 593, 126763, 01.09.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Rudin, SA, Zinovyev, VA, Smagina, ZV, Novikov, PL, Nenashev, AV & Pavsky, KV 2022, 'Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates', Journal of Crystal Growth, vol. 593, 126763. https://doi.org/10.1016/j.jcrysgro.2022.126763

APA

Rudin, S. A., Zinovyev, V. A., Smagina, Z. V., Novikov, P. L., Nenashev, A. V., & Pavsky, K. V. (2022). Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates. Journal of Crystal Growth, 593, [126763]. https://doi.org/10.1016/j.jcrysgro.2022.126763

Vancouver

Rudin SA, Zinovyev VA, Smagina ZV, Novikov PL, Nenashev AV, Pavsky KV. Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates. Journal of Crystal Growth. 2022 Sept 1;593:126763. doi: 10.1016/j.jcrysgro.2022.126763

Author

Rudin, S. A. ; Zinovyev, V. A. ; Smagina, Zh V. et al. / Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates. In: Journal of Crystal Growth. 2022 ; Vol. 593.

BibTeX

@article{76aa99ee2e9049b6a587461003b4e3f0,
title = "Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates",
abstract = "Ordered arrays of Ge quantum dot groups (QDs) were grown on pit-patterned silicon-on-insulator (SOI) substrates with deep pits, prepared by electron beam lithography (EBL) and plasma-chemical etching (PCE). Experiments were carried out for the square and hexagonal pit lattices with the lattice period varied. The QDs were found to be sited at the periphery of pits. It was demonstrated that for both pit lattice types the number of QDs per pit can be controlled by varying the period of the pit lattice. The Monte Carlo (MC) simulations of QDs growth on pit-patterned Si substrates were carried out, using the model, which takes strain into account. The island patterning depending on the inter-pit distance is interpreted as the result of competition between stress-driven QD nucleation and Ge migration downward into the pits, which serve as the sinks for Ge atoms.",
keywords = "A1. Monte-Carlo simulation, A1. Spatial ordering, A3. Ge(Si) islands, A3. Pre-patterned substrate, A3. Quantum dots",
author = "Rudin, {S. A.} and Zinovyev, {V. A.} and Smagina, {Zh V.} and Novikov, {P. L.} and Nenashev, {A. V.} and Pavsky, {K. V.}",
note = "Funding Information: We gratefully acknowledge financial support of this work by the RSF (Grant 21-72-20184). Authors thank the NSU Multiple-access Center “VTAN” and ISP SB RAS Multiple-access Center “Nano-structures” for the provision of measurement equipment. We would also like to thank E.E. Rodyakina for SEM analysis and Vl. A. Armbrister for growth experiments. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",
year = "2022",
month = sep,
day = "1",
doi = "10.1016/j.jcrysgro.2022.126763",
language = "English",
volume = "593",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates

AU - Rudin, S. A.

AU - Zinovyev, V. A.

AU - Smagina, Zh V.

AU - Novikov, P. L.

AU - Nenashev, A. V.

AU - Pavsky, K. V.

N1 - Funding Information: We gratefully acknowledge financial support of this work by the RSF (Grant 21-72-20184). Authors thank the NSU Multiple-access Center “VTAN” and ISP SB RAS Multiple-access Center “Nano-structures” for the provision of measurement equipment. We would also like to thank E.E. Rodyakina for SEM analysis and Vl. A. Armbrister for growth experiments. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/9/1

Y1 - 2022/9/1

N2 - Ordered arrays of Ge quantum dot groups (QDs) were grown on pit-patterned silicon-on-insulator (SOI) substrates with deep pits, prepared by electron beam lithography (EBL) and plasma-chemical etching (PCE). Experiments were carried out for the square and hexagonal pit lattices with the lattice period varied. The QDs were found to be sited at the periphery of pits. It was demonstrated that for both pit lattice types the number of QDs per pit can be controlled by varying the period of the pit lattice. The Monte Carlo (MC) simulations of QDs growth on pit-patterned Si substrates were carried out, using the model, which takes strain into account. The island patterning depending on the inter-pit distance is interpreted as the result of competition between stress-driven QD nucleation and Ge migration downward into the pits, which serve as the sinks for Ge atoms.

AB - Ordered arrays of Ge quantum dot groups (QDs) were grown on pit-patterned silicon-on-insulator (SOI) substrates with deep pits, prepared by electron beam lithography (EBL) and plasma-chemical etching (PCE). Experiments were carried out for the square and hexagonal pit lattices with the lattice period varied. The QDs were found to be sited at the periphery of pits. It was demonstrated that for both pit lattice types the number of QDs per pit can be controlled by varying the period of the pit lattice. The Monte Carlo (MC) simulations of QDs growth on pit-patterned Si substrates were carried out, using the model, which takes strain into account. The island patterning depending on the inter-pit distance is interpreted as the result of competition between stress-driven QD nucleation and Ge migration downward into the pits, which serve as the sinks for Ge atoms.

KW - A1. Monte-Carlo simulation

KW - A1. Spatial ordering

KW - A3. Ge(Si) islands

KW - A3. Pre-patterned substrate

KW - A3. Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=85132726132&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2022.126763

DO - 10.1016/j.jcrysgro.2022.126763

M3 - Article

AN - SCOPUS:85132726132

VL - 593

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 126763

ER -

ID: 36481814