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Graphitization of a diamond surface upon high-dose ion bombardment. / Andrianova, N. N.; Borisov, A. M.; Kazakov, V. A. et al.

In: Bulletin of the Russian Academy of Sciences: Physics, Vol. 80, No. 2, 01.02.2016, p. 156-160.

Research output: Contribution to journal › Article › peer-review

Harvard

Andrianova, NN, Borisov, AM, Kazakov, VA, Mashkova, ES, Palyanov, YN, Pitirimova, EA, Popov, VP, Rizakhanov, RN & Sigalaev, SK 2016, 'Graphitization of a diamond surface upon high-dose ion bombardment', Bulletin of the Russian Academy of Sciences: Physics, vol. 80, no. 2, pp. 156-160. https://doi.org/10.3103/S1062873816020040

APA

Andrianova, N. N., Borisov, A. M., Kazakov, V. A., Mashkova, E. S., Palyanov, Y. N., Pitirimova, E. A., Popov, V. P., Rizakhanov, R. N., & Sigalaev, S. K. (2016). Graphitization of a diamond surface upon high-dose ion bombardment. Bulletin of the Russian Academy of Sciences: Physics, 80(2), 156-160. https://doi.org/10.3103/S1062873816020040

Vancouver

Andrianova NN, Borisov AM, Kazakov VA, Mashkova ES, Palyanov YN, Pitirimova EA et al. Graphitization of a diamond surface upon high-dose ion bombardment. Bulletin of the Russian Academy of Sciences: Physics. 2016 Feb 1;80(2):156-160. doi: 10.3103/S1062873816020040

Author

Andrianova, N. N. ; Borisov, A. M. ; Kazakov, V. A. et al. / Graphitization of a diamond surface upon high-dose ion bombardment. In: Bulletin of the Russian Academy of Sciences: Physics. 2016 ; Vol. 80, No. 2. pp. 156-160.

BibTeX

@article{ae41db645ff1434d8b07be413053fc23,
title = "Graphitization of a diamond surface upon high-dose ion bombardment",
abstract = "Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.",
author = "Andrianova, {N. N.} and Borisov, {A. M.} and Kazakov, {V. A.} and Mashkova, {E. S.} and Palyanov, {Yu N.} and Pitirimova, {E. A.} and Popov, {V. P.} and Rizakhanov, {R. N.} and Sigalaev, {S. K.}",
year = "2016",
month = feb,
day = "1",
doi = "10.3103/S1062873816020040",
language = "English",
volume = "80",
pages = "156--160",
journal = "Bulletin of the Russian Academy of Sciences: Physics",
issn = "1062-8738",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Graphitization of a diamond surface upon high-dose ion bombardment

AU - Andrianova, N. N.

AU - Borisov, A. M.

AU - Kazakov, V. A.

AU - Mashkova, E. S.

AU - Palyanov, Yu N.

AU - Pitirimova, E. A.

AU - Popov, V. P.

AU - Rizakhanov, R. N.

AU - Sigalaev, S. K.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.

AB - Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.

UR - http://www.scopus.com/inward/record.url?scp=84962418128&partnerID=8YFLogxK

U2 - 10.3103/S1062873816020040

DO - 10.3103/S1062873816020040

M3 - Article

AN - SCOPUS:84962418128

VL - 80

SP - 156

EP - 160

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

IS - 2

ER -

ID: 25724950