TY - JOUR

T1 - Gated two-dimensional electron gas in magnetic field

T2 - Nonlinear versus linear regime

AU - Dyakonova, N.

AU - Dyakonov, M.

AU - Kvon, Z. D.

N1 - Funding Information: We thank Vladimir Umansky for very helpful discussions. At Charles Coulomb Laboratory this work was supported by CNRS through IRP TeraMIR project. Publisher Copyright: © 2020 American Physical Society. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/11/24

Y1 - 2020/11/24

N2 - We study the effect of magnetic field on the properties of a high-mobility gated two-dimensional electron gas in a field-effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced redistribution of the electron density in the conducting channel. The experimental results obtained in the nonlinear regime have been interpreted based on the results obtained in the linear regime by a simple theoretical model, which describes quite well our observations.

AB - We study the effect of magnetic field on the properties of a high-mobility gated two-dimensional electron gas in a field-effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the channel becomes strongly depleted, we see a number of unusual effects related to the magnetic field induced redistribution of the electron density in the conducting channel. The experimental results obtained in the nonlinear regime have been interpreted based on the results obtained in the linear regime by a simple theoretical model, which describes quite well our observations.

UR - http://www.scopus.com/inward/record.url?scp=85097125801&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.102.205305

DO - 10.1103/PhysRevB.102.205305

M3 - Article

AN - SCOPUS:85097125801

VL - 102

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 20

M1 - 205305

ER -