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Formation of planar tellurium nanowire networks on substrate surfaces. / Shklyaev, A. A.; Zhachuk, R. A.

In: Materials Today Communications, Vol. 43, 111773, 02.2025.

Research output: Contribution to journal › Article › peer-review

Harvard

Shklyaev, AA & Zhachuk, RA 2025, 'Formation of planar tellurium nanowire networks on substrate surfaces', Materials Today Communications, vol. 43, 111773. https://doi.org/10.1016/j.mtcomm.2025.111773

APA

Shklyaev, A. A., & Zhachuk, R. A. (2025). Formation of planar tellurium nanowire networks on substrate surfaces. Materials Today Communications, 43, [111773]. https://doi.org/10.1016/j.mtcomm.2025.111773

Vancouver

Shklyaev AA, Zhachuk RA. Formation of planar tellurium nanowire networks on substrate surfaces. Materials Today Communications. 2025 Feb;43:111773. doi: 10.1016/j.mtcomm.2025.111773

Author

Shklyaev, A. A. ; Zhachuk, R. A. / Formation of planar tellurium nanowire networks on substrate surfaces. In: Materials Today Communications. 2025 ; Vol. 43.

BibTeX

@article{14c82606727248f0b00c22e551f57947,
title = "Formation of planar tellurium nanowire networks on substrate surfaces",
abstract = "The formation of Te nanowires (NWs) on silicon substrates by the Te deposition in vacuum is studied depending on the initial substrate chemical treatment, temperature and Te deposition rate. The technological parameters for the NW growth along the substrate surface are found. This growth mode is associated with the formation of chemical bonds between Te atoms and the substrate along the entire NW length. Under conditions close to the dynamic equilibrium between the rates of Te deposition and desorption, long (∼2 μm) and thin (20–30 nm) NWs are formed. A significant excess of the deposition rate over the desorption rate results in the formation of high concentration of NWs, which leads to their intersections. The splicing of NWs at intersection points forms a network of lateral Te NWs, which may have an advantage in creating functional planar structures, compared to using arrays of NWs that are not connected to each other.",
keywords = "Physical deposition, Planar nanowire network, Surface processes, Te nanowires",
author = "Shklyaev, {A. A.} and Zhachuk, {R. A.}",
note = "The work is supported by the Russian Science Foundation (Grant # 19–72–30023).",
year = "2025",
month = feb,
doi = "10.1016/j.mtcomm.2025.111773",
language = "English",
volume = "43",
journal = "Materials Today Communications",
issn = "2352-4928",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Formation of planar tellurium nanowire networks on substrate surfaces

AU - Shklyaev, A. A.

AU - Zhachuk, R. A.

N1 - The work is supported by the Russian Science Foundation (Grant # 19–72–30023).

PY - 2025/2

Y1 - 2025/2

N2 - The formation of Te nanowires (NWs) on silicon substrates by the Te deposition in vacuum is studied depending on the initial substrate chemical treatment, temperature and Te deposition rate. The technological parameters for the NW growth along the substrate surface are found. This growth mode is associated with the formation of chemical bonds between Te atoms and the substrate along the entire NW length. Under conditions close to the dynamic equilibrium between the rates of Te deposition and desorption, long (∼2 μm) and thin (20–30 nm) NWs are formed. A significant excess of the deposition rate over the desorption rate results in the formation of high concentration of NWs, which leads to their intersections. The splicing of NWs at intersection points forms a network of lateral Te NWs, which may have an advantage in creating functional planar structures, compared to using arrays of NWs that are not connected to each other.

AB - The formation of Te nanowires (NWs) on silicon substrates by the Te deposition in vacuum is studied depending on the initial substrate chemical treatment, temperature and Te deposition rate. The technological parameters for the NW growth along the substrate surface are found. This growth mode is associated with the formation of chemical bonds between Te atoms and the substrate along the entire NW length. Under conditions close to the dynamic equilibrium between the rates of Te deposition and desorption, long (∼2 μm) and thin (20–30 nm) NWs are formed. A significant excess of the deposition rate over the desorption rate results in the formation of high concentration of NWs, which leads to their intersections. The splicing of NWs at intersection points forms a network of lateral Te NWs, which may have an advantage in creating functional planar structures, compared to using arrays of NWs that are not connected to each other.

KW - Physical deposition

KW - Planar nanowire network

KW - Surface processes

KW - Te nanowires

UR - https://www.mendeley.com/catalogue/1c4acaa7-f252-3dbd-91e0-f68b199c6a50/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85216358705&origin=inward&txGid=a498a54bc5fa13adea50045a96046b9c

U2 - 10.1016/j.mtcomm.2025.111773

DO - 10.1016/j.mtcomm.2025.111773

M3 - Article

VL - 43

JO - Materials Today Communications

JF - Materials Today Communications

SN - 2352-4928

M1 - 111773

ER -

ID: 63949935