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Formation of a Graphene-Like SiN Layer on the Surface Si(111)

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1134/S1063782618120151
Final published version

V. G. Mansurov
Yu G. Galitsyn
T. V. Malin
S. A. Teys
E. V. Fedosenko
A. S. Kozhukhov
K. S. Zhuravlev
Ildikó Cora
Béla Pécz

Original language	English
Pages (from-to)	1511-1517
Number of pages	7
Journal	Semiconductors
Volume	52
Issue number	12
DOIs	https://doi.org/10.1134/S1063782618120151
Publication status	Published - 1 Dec 2018

OECD FOS+WOS

Research areas

SILICON-NITRIDE, ELECTRONIC-STRUCTURE, CRYSTAL-STRUCTURE, BETA-SI3N4, ADSORPTION, DEPOSITION, KINETICS, AMMONIA, ORIGIN, FILM

ID: 17408172