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Films fabricated from partially fluorinated graphene suspension : Structural, electronic properties and negative differential resistance. / Antonova, Irina V.; Kurkina, Irina I.; Nebogatikova, Nadezhda A. et al.

In: Nanotechnology, Vol. 28, No. 7, 074001, 17.02.2017.

Research output: Contribution to journal › Article › peer-review

Harvard

Antonova, IV, Kurkina, II, Nebogatikova, NA, Komonov, AI & Smagulova, SA 2017, 'Films fabricated from partially fluorinated graphene suspension: Structural, electronic properties and negative differential resistance', Nanotechnology, vol. 28, no. 7, 074001. https://doi.org/10.1088/1361-6528/28/7/074001

APA

Antonova, I. V., Kurkina, I. I., Nebogatikova, N. A., Komonov, A. I., & Smagulova, S. A. (2017). Films fabricated from partially fluorinated graphene suspension: Structural, electronic properties and negative differential resistance. Nanotechnology, 28(7), [074001]. https://doi.org/10.1088/1361-6528/28/7/074001

Vancouver

Antonova IV, Kurkina II, Nebogatikova NA, Komonov AI, Smagulova SA. Films fabricated from partially fluorinated graphene suspension: Structural, electronic properties and negative differential resistance. Nanotechnology. 2017 Feb 17;28(7):074001. doi: 10.1088/1361-6528/28/7/074001

Author

Antonova, Irina V. ; Kurkina, Irina I. ; Nebogatikova, Nadezhda A. et al. / Films fabricated from partially fluorinated graphene suspension : Structural, electronic properties and negative differential resistance. In: Nanotechnology. 2017 ; Vol. 28, No. 7.

BibTeX

@article{bf877904a60e47e29120fcdff51a59a3,
title = "Films fabricated from partially fluorinated graphene suspension: Structural, electronic properties and negative differential resistance",
abstract = "The band structure and electric properties of films created from a partially fluorinated graphene suspension are analyzed in this paper. As may be inferred from the structural study, graphene islands (quantum dots) are formed in these films. Various types of negative differential resistance (NDR) and a step-like increase in the current are found for films created from the fluorinated graphene suspension. NDR resulting from the formation of the potential barrier system in the film and corresponding to the theoretical prediction is observed for a relatively low fluorination degree. The origin of the NDR varies with an increase in the fluorination degree of the suspension. The observation of NDR in the fluorinated films widens the range of application of such films, including as active device layers fabricated using 2D printed technologies on rigid and flexible substrates.",
keywords = "capacitance peaks, current steps, fluorinated grapheme, graphene islands, negative differential resistance, CONDUCTANCE, fluorinated graphene, CARBON NANOTUBES, FLUOROGRAPHENE, FUNCTIONALIZATION, DENSITY, TRANSISTORS, DEVICES",
author = "Antonova, {Irina V.} and Kurkina, {Irina I.} and Nebogatikova, {Nadezhda A.} and Komonov, {Alexander I.} and Smagulova, {Svetlana A.}",
year = "2017",
month = feb,
day = "17",
doi = "10.1088/1361-6528/28/7/074001",
language = "English",
volume = "28",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "7",

}

RIS

TY - JOUR

T1 - Films fabricated from partially fluorinated graphene suspension

T2 - Structural, electronic properties and negative differential resistance

AU - Antonova, Irina V.

AU - Kurkina, Irina I.

AU - Nebogatikova, Nadezhda A.

AU - Komonov, Alexander I.

AU - Smagulova, Svetlana A.

PY - 2017/2/17

Y1 - 2017/2/17

N2 - The band structure and electric properties of films created from a partially fluorinated graphene suspension are analyzed in this paper. As may be inferred from the structural study, graphene islands (quantum dots) are formed in these films. Various types of negative differential resistance (NDR) and a step-like increase in the current are found for films created from the fluorinated graphene suspension. NDR resulting from the formation of the potential barrier system in the film and corresponding to the theoretical prediction is observed for a relatively low fluorination degree. The origin of the NDR varies with an increase in the fluorination degree of the suspension. The observation of NDR in the fluorinated films widens the range of application of such films, including as active device layers fabricated using 2D printed technologies on rigid and flexible substrates.

AB - The band structure and electric properties of films created from a partially fluorinated graphene suspension are analyzed in this paper. As may be inferred from the structural study, graphene islands (quantum dots) are formed in these films. Various types of negative differential resistance (NDR) and a step-like increase in the current are found for films created from the fluorinated graphene suspension. NDR resulting from the formation of the potential barrier system in the film and corresponding to the theoretical prediction is observed for a relatively low fluorination degree. The origin of the NDR varies with an increase in the fluorination degree of the suspension. The observation of NDR in the fluorinated films widens the range of application of such films, including as active device layers fabricated using 2D printed technologies on rigid and flexible substrates.

KW - capacitance peaks

KW - current steps

KW - fluorinated grapheme

KW - graphene islands

KW - negative differential resistance

KW - CONDUCTANCE

KW - fluorinated graphene

KW - CARBON NANOTUBES

KW - FLUOROGRAPHENE

KW - FUNCTIONALIZATION

KW - DENSITY

KW - TRANSISTORS

KW - DEVICES

UR - http://www.scopus.com/inward/record.url?scp=85010297298&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/28/7/074001

DO - 10.1088/1361-6528/28/7/074001

M3 - Article

AN - SCOPUS:85010297298

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 7

M1 - 074001

ER -

ID: 10314015