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Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range. / Kozlov, D. V.; Rumyantsev, V. V.; Kadykov, A. M. et al.

In: JETP Letters, Vol. 109, No. 10, 01.05.2019, p. 657-662.

Research output: Contribution to journal › Article › peer-review

Harvard

Kozlov, DV, Rumyantsev, VV, Kadykov, AM, Fadeev, MA, Kulikov, NS, Utochkin, VV, Mikhailov, NN, Dvoretskii, SA, Gavrilenko, VI, Hubers, HW, Teppe, F & Morozov, SV 2019, 'Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range', JETP Letters, vol. 109, no. 10, pp. 657-662. https://doi.org/10.1134/S0021364019100114

APA

Kozlov, D. V., Rumyantsev, V. V., Kadykov, A. M., Fadeev, M. A., Kulikov, N. S., Utochkin, V. V., Mikhailov, N. N., Dvoretskii, S. A., Gavrilenko, V. I., Hubers, H. W., Teppe, F., & Morozov, S. V. (2019). Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range. JETP Letters, 109(10), 657-662. https://doi.org/10.1134/S0021364019100114

Vancouver

Kozlov DV, Rumyantsev VV, Kadykov AM, Fadeev MA, Kulikov NS, Utochkin VV et al. Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range. JETP Letters. 2019 May 1;109(10):657-662. doi: 10.1134/S0021364019100114

Author

Kozlov, D. V. ; Rumyantsev, V. V. ; Kadykov, A. M. et al. / Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range. In: JETP Letters. 2019 ; Vol. 109, No. 10. pp. 657-662.

BibTeX

@article{3822fa9f515740158d9e6f5b696b4f3c,
title = "Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range",
abstract = "The terahertz photoluminescence spectra of HgTe/CdHgTe heterostructure with quantum wells under interband optical excitation with a power of 3 to 300 mW have been studied in the temperature range of 30–100 K. The photoluminescence spectrum includes a band corresponding to quantum energies below the width of the band gap. The position of this band does not change with increasing temperature. This property allows attributing it to the capture of holes by acceptor centers. It has been shown that these acceptor centers are singly ionized mercury vacancies, which are double acceptors. A nonmonotonic dependence of the intensity of a signal of a long-wavelength photoluminescence band on the power of an exciting source has been revealed. A short-wavelength photoluminescence band corresponding to interband transitions appears with an increase in the exciting power. It has been shown that this effect is caused by the saturation of the number of partially ionized mercury vacancies with increasing pump intensity.",
author = "Kozlov, {D. V.} and Rumyantsev, {V. V.} and Kadykov, {A. M.} and Fadeev, {M. A.} and Kulikov, {N. S.} and Utochkin, {V. V.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Gavrilenko, {V. I.} and Hubers, {H. W.} and F. Teppe and Morozov, {S. V.}",
year = "2019",
month = may,
day = "1",
doi = "10.1134/S0021364019100114",
language = "English",
volume = "109",
pages = "657--662",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "10",

}

RIS

TY - JOUR

T1 - Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range

AU - Kozlov, D. V.

AU - Rumyantsev, V. V.

AU - Kadykov, A. M.

AU - Fadeev, M. A.

AU - Kulikov, N. S.

AU - Utochkin, V. V.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Gavrilenko, V. I.

AU - Hubers, H. W.

AU - Teppe, F.

AU - Morozov, S. V.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - The terahertz photoluminescence spectra of HgTe/CdHgTe heterostructure with quantum wells under interband optical excitation with a power of 3 to 300 mW have been studied in the temperature range of 30–100 K. The photoluminescence spectrum includes a band corresponding to quantum energies below the width of the band gap. The position of this band does not change with increasing temperature. This property allows attributing it to the capture of holes by acceptor centers. It has been shown that these acceptor centers are singly ionized mercury vacancies, which are double acceptors. A nonmonotonic dependence of the intensity of a signal of a long-wavelength photoluminescence band on the power of an exciting source has been revealed. A short-wavelength photoluminescence band corresponding to interband transitions appears with an increase in the exciting power. It has been shown that this effect is caused by the saturation of the number of partially ionized mercury vacancies with increasing pump intensity.

AB - The terahertz photoluminescence spectra of HgTe/CdHgTe heterostructure with quantum wells under interband optical excitation with a power of 3 to 300 mW have been studied in the temperature range of 30–100 K. The photoluminescence spectrum includes a band corresponding to quantum energies below the width of the band gap. The position of this band does not change with increasing temperature. This property allows attributing it to the capture of holes by acceptor centers. It has been shown that these acceptor centers are singly ionized mercury vacancies, which are double acceptors. A nonmonotonic dependence of the intensity of a signal of a long-wavelength photoluminescence band on the power of an exciting source has been revealed. A short-wavelength photoluminescence band corresponding to interband transitions appears with an increase in the exciting power. It has been shown that this effect is caused by the saturation of the number of partially ionized mercury vacancies with increasing pump intensity.

UR - http://www.scopus.com/inward/record.url?scp=85069940253&partnerID=8YFLogxK

U2 - 10.1134/S0021364019100114

DO - 10.1134/S0021364019100114

M3 - Article

AN - SCOPUS:85069940253

VL - 109

SP - 657

EP - 662

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -

ID: 21145491