Standard

Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor. / Jaroshevich, A. S.; Tkachenko, V. A.; Kvon, Z. D. et al.

In: Bulletin of the Russian Academy of Sciences: Physics, Vol. 88, No. 9, 09.2024, p. 1505-1512.

Research output: Contribution to journal › Article › peer-review

Harvard

Jaroshevich, AS, Tkachenko, VA, Kvon, ZD, Kuzmin, NS, Tkachenko, OA, Baksheev, DG, Marchishin, IV, Bakarov, AK, Rodyakina, EE, Antonov, VA, Popov, VP & Latyshev, AV 2024, 'Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor', Bulletin of the Russian Academy of Sciences: Physics, vol. 88, no. 9, pp. 1505-1512. https://doi.org/10.1134/S1062873824707773

APA

Jaroshevich, A. S., Tkachenko, V. A., Kvon, Z. D., Kuzmin, N. S., Tkachenko, O. A., Baksheev, D. G., Marchishin, I. V., Bakarov, A. K., Rodyakina, E. E., Antonov, V. A., Popov, V. P., & Latyshev, A. V. (2024). Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor. Bulletin of the Russian Academy of Sciences: Physics, 88(9), 1505-1512. https://doi.org/10.1134/S1062873824707773

Vancouver

Jaroshevich AS, Tkachenko VA, Kvon ZD, Kuzmin NS, Tkachenko OA, Baksheev DG et al. Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor. Bulletin of the Russian Academy of Sciences: Physics. 2024 Sept;88(9):1505-1512. doi: 10.1134/S1062873824707773

Author

Jaroshevich, A. S. ; Tkachenko, V. A. ; Kvon, Z. D. et al. / Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor. In: Bulletin of the Russian Academy of Sciences: Physics. 2024 ; Vol. 88, No. 9. pp. 1505-1512.

BibTeX

@article{e7e1b79b1af8406dbd304c9a7c048cc8,
title = "Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor",
abstract = "Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.",
keywords = "field-effect transistor, mesoscopic transport, microwave photoconductance, quantum point contact, quantum scattering, tunneling mode, two-dimensional electron gas",
author = "Jaroshevich, {A. S.} and Tkachenko, {V. A.} and Kvon, {Z. D.} and Kuzmin, {N. S.} and Tkachenko, {O. A.} and Baksheev, {D. G.} and Marchishin, {I. V.} and Bakarov, {A. K.} and Rodyakina, {E. E.} and Antonov, {V. A.} and Popov, {V. P.} and Latyshev, {A. V.}",
note = "The theoretical part of the work was performed under the state assignment (research work no. 223020701075-5). The experimental part of the work was made under the state assignment for the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia.",
year = "2024",
month = sep,
doi = "10.1134/S1062873824707773",
language = "English",
volume = "88",
pages = "1505--1512",
journal = "Bulletin of the Russian Academy of Sciences: Physics",
issn = "1062-8738",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor

AU - Jaroshevich, A. S.

AU - Tkachenko, V. A.

AU - Kvon, Z. D.

AU - Kuzmin, N. S.

AU - Tkachenko, O. A.

AU - Baksheev, D. G.

AU - Marchishin, I. V.

AU - Bakarov, A. K.

AU - Rodyakina, E. E.

AU - Antonov, V. A.

AU - Popov, V. P.

AU - Latyshev, A. V.

N1 - The theoretical part of the work was performed under the state assignment (research work no. 223020701075-5). The experimental part of the work was made under the state assignment for the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia.

PY - 2024/9

Y1 - 2024/9

N2 - Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.

AB - Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.

KW - field-effect transistor

KW - mesoscopic transport

KW - microwave photoconductance

KW - quantum point contact

KW - quantum scattering

KW - tunneling mode

KW - two-dimensional electron gas

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85206354113&origin=inward&txGid=c17e1234f877ba4e9f274d527e017ade

UR - https://www.mendeley.com/catalogue/9ddfc0c3-c1c1-3673-ad83-ba0895981bed/

U2 - 10.1134/S1062873824707773

DO - 10.1134/S1062873824707773

M3 - Article

VL - 88

SP - 1505

EP - 1512

JO - Bulletin of the Russian Academy of Sciences: Physics

JF - Bulletin of the Russian Academy of Sciences: Physics

SN - 1062-8738

IS - 9

ER -

ID: 60815352