Research output: Contribution to journal › Article › peer-review
Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor. / Jaroshevich, A. S.; Tkachenko, V. A.; Kvon, Z. D. et al.
In: Bulletin of the Russian Academy of Sciences: Physics, Vol. 88, No. 9, 14.10.2024, p. 1505-1512.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Features of Microwave Photoconductance of Quantum Point Contact and Silicon Field-Effect Transistor
AU - Jaroshevich, A. S.
AU - Tkachenko, V. A.
AU - Kvon, Z. D.
AU - Kuzmin, N. S.
AU - Tkachenko, O. A.
AU - Baksheev, D. G.
AU - Marchishin, I. V.
AU - Bakarov, A. K.
AU - Rodyakina, E. E.
AU - Antonov, V. A.
AU - Popov, V. P.
AU - Latyshev, A. V.
N1 - The work was carried out using the computing resources of the Joint Supercomputer Center of the Russian Academy of Sciences.
PY - 2024/10/14
Y1 - 2024/10/14
N2 - Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.
AB - Quantum point contacts with a short (100-nm) channel in a high-mobility two-dimensional electron gas of GaAs/Al(Ga)As heterostructures and a short-channel p-type field-effect transistor in a silicon-on-insulator structure were fabricated and studied experimentally and by modeling at the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia, in order to study the response of the samples to weak irradiation by an electromagnetic field with a frequency of ~2 GHz. This response in the tunneling mode at a temperature of 4.2 K turned out to be giant and was observed against the background of features caused by impurity disorder.
KW - field-effect transistor
KW - mesoscopic transport
KW - microwave photoconductance
KW - quantum point contact
KW - quantum scattering
KW - tunneling mode
KW - two-dimensional electron gas
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85206354113&origin=inward&txGid=c17e1234f877ba4e9f274d527e017ade
UR - https://www.mendeley.com/catalogue/9ddfc0c3-c1c1-3673-ad83-ba0895981bed/
U2 - 10.1134/S1062873824707773
DO - 10.1134/S1062873824707773
M3 - Article
VL - 88
SP - 1505
EP - 1512
JO - Bulletin of the Russian Academy of Sciences: Physics
JF - Bulletin of the Russian Academy of Sciences: Physics
SN - 1062-8738
IS - 9
ER -
ID: 60815352