Standard

Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells. / Minkov, G. M.; Rut, O. E.; Sherstobitov, A. A. et al.

In: JETP Letters, Vol. 110, No. 4, 01.08.2019, p. 301-305.

Research output: Contribution to journal › Article › peer-review

Harvard

Minkov, GM, Rut, OE, Sherstobitov, AA, Dvoretski, SA & Mikhailov, NN 2019, 'Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells', JETP Letters, vol. 110, no. 4, pp. 301-305. https://doi.org/10.1134/S0021364019160082

APA

Minkov, G. M., Rut, O. E., Sherstobitov, A. A., Dvoretski, S. A., & Mikhailov, N. N. (2019). Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells. JETP Letters, 110(4), 301-305. https://doi.org/10.1134/S0021364019160082

Vancouver

Minkov GM, Rut OE, Sherstobitov AA, Dvoretski SA, Mikhailov NN. Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells. JETP Letters. 2019 Aug 1;110(4):301-305. doi: 10.1134/S0021364019160082

Author

Minkov, G. M. ; Rut, O. E. ; Sherstobitov, A. A. et al. / Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells. In: JETP Letters. 2019 ; Vol. 110, No. 4. pp. 301-305.

BibTeX

@article{5e727feeb9c24cdebd1b97bc196859f0,
title = "Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells",
abstract = "Magneto-intersubband oscillations (MISOs) in single quantum wells of the gapless semiconductor HgTe have been studied experimentally. It has been shown that, in contrast to MISOs in double quantum wells based on broadband semiconductors GaAs and InGaAs and theoretical predictions, magnetic fields at which antinodes of high-frequency oscillations are observed coincide with minima rather than with maxima of MISOs of the magnetoresistance ρxx. It has been assumed that this feature is due to the suppression of the resonance of the probability of transitions between Landau levels of two spectral branches split by the strong spin—orbit coupling.",
keywords = "SCATTERING",
author = "Minkov, {G. M.} and Rut, {O. E.} and Sherstobitov, {A. A.} and Dvoretski, {S. A.} and Mikhailov, {N. N.}",
year = "2019",
month = aug,
day = "1",
doi = "10.1134/S0021364019160082",
language = "English",
volume = "110",
pages = "301--305",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "4",

}

RIS

TY - JOUR

T1 - Features of Magneto-Intersubband Oscillations in HgTe Quantum Wells

AU - Minkov, G. M.

AU - Rut, O. E.

AU - Sherstobitov, A. A.

AU - Dvoretski, S. A.

AU - Mikhailov, N. N.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - Magneto-intersubband oscillations (MISOs) in single quantum wells of the gapless semiconductor HgTe have been studied experimentally. It has been shown that, in contrast to MISOs in double quantum wells based on broadband semiconductors GaAs and InGaAs and theoretical predictions, magnetic fields at which antinodes of high-frequency oscillations are observed coincide with minima rather than with maxima of MISOs of the magnetoresistance ρxx. It has been assumed that this feature is due to the suppression of the resonance of the probability of transitions between Landau levels of two spectral branches split by the strong spin—orbit coupling.

AB - Magneto-intersubband oscillations (MISOs) in single quantum wells of the gapless semiconductor HgTe have been studied experimentally. It has been shown that, in contrast to MISOs in double quantum wells based on broadband semiconductors GaAs and InGaAs and theoretical predictions, magnetic fields at which antinodes of high-frequency oscillations are observed coincide with minima rather than with maxima of MISOs of the magnetoresistance ρxx. It has been assumed that this feature is due to the suppression of the resonance of the probability of transitions between Landau levels of two spectral branches split by the strong spin—orbit coupling.

KW - SCATTERING

UR - http://www.scopus.com/inward/record.url?scp=85074143952&partnerID=8YFLogxK

U2 - 10.1134/S0021364019160082

DO - 10.1134/S0021364019160082

M3 - Article

AN - SCOPUS:85074143952

VL - 110

SP - 301

EP - 305

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 4

ER -

ID: 21997129