Research output: Contribution to journal › Conference article › peer-review
Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling. / Khoroshilov, V. S.; Kazantsev, D. M.; Zhuravlev, A. G.
In: Journal of Physics: Conference Series, Vol. 1410, No. 1, 012128, 20.12.2019.Research output: Contribution to journal › Conference article › peer-review
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TY - JOUR
T1 - Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling
AU - Khoroshilov, V. S.
AU - Kazantsev, D. M.
AU - Zhuravlev, A. G.
PY - 2019/12/20
Y1 - 2019/12/20
N2 - The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.
AB - The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.
UR - http://www.scopus.com/inward/record.url?scp=85078202071&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1410/1/012128
DO - 10.1088/1742-6596/1410/1/012128
M3 - Conference article
AN - SCOPUS:85078202071
VL - 1410
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012128
T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019
Y2 - 22 April 2019 through 25 April 2019
ER -
ID: 23259485