TY - CONF

T1 - ESTIMATION OF NONLINEAR SUSCEPTIBILITY Χ(2) OF GaSe(1-X)SX CRYSTALS IN THE THZ RANGE

AU - Шевченко, Олеся Николаевна

AU - Николаев, Назар Александрович

AU - Анцыгин, Валерий Дмитриевич

PY - 2023

Y1 - 2023

N2 - Due to the development of a new 6G data transmission range, it is urgent to search for new materials for the creation of integrated devices capable of operating in the frequency range of 140350 GHz (sub-terahertz range). One of the promising materials for this range is the GaSe crystal due to its exceptional properties, represented by transparency in the telecommunications (1.5 mkm) and sub-terahertz ranges and a high nonlinear optical coefficient. Despite many works aimed at studying the properties of doped and undoped gallium selenide crystals, relatively few studies have examined the coefficient of nonlinear susceptibility of crystals in their undoped state; no such studies have been discovered for doped crystals. This paper presents an estimation of the second-order nonlinearity χ(2) of GaSe(1-x)Sx crystals, where x takes the values 0, 0.03, 0.12, 0.16, and 0.22. The estimation was made on the basis of previously obtained data on the value of the electro-optical coefficient r22 for GaSe(1-x)Sx crystals. Due to the use of several approaches to estimate the second-order nonlinear susceptibility coefficient and based on the data of other authors on the study of GaSe crystals in the terahertz range, calculations and comparisons of the results were performed. The discrepancy between the values of χ(2) from 5 to 28 pm/V, depending on the experimental conditions, is shown. For the first time, second-order nonlinearity was estimated for GaSe crystals with varying degrees of sulfur doping. This research was funded by the Ministry of Science and Higher Education of the Russian Federation: project No. FSUS-2020-0029; project No. 121032400052-6. The authors acknowledge the Shared Research Center “VTAN” of the Novosibirsk State University supported by Minobrnauki of Russia by agreement No. 075-12-2021-697. The authors acknowledge the Shared Equipment Center “Spectroscopy and Optics” of the Institute of Automation and Electrometry SB RAS.

AB - Due to the development of a new 6G data transmission range, it is urgent to search for new materials for the creation of integrated devices capable of operating in the frequency range of 140350 GHz (sub-terahertz range). One of the promising materials for this range is the GaSe crystal due to its exceptional properties, represented by transparency in the telecommunications (1.5 mkm) and sub-terahertz ranges and a high nonlinear optical coefficient. Despite many works aimed at studying the properties of doped and undoped gallium selenide crystals, relatively few studies have examined the coefficient of nonlinear susceptibility of crystals in their undoped state; no such studies have been discovered for doped crystals. This paper presents an estimation of the second-order nonlinearity χ(2) of GaSe(1-x)Sx crystals, where x takes the values 0, 0.03, 0.12, 0.16, and 0.22. The estimation was made on the basis of previously obtained data on the value of the electro-optical coefficient r22 for GaSe(1-x)Sx crystals. Due to the use of several approaches to estimate the second-order nonlinear susceptibility coefficient and based on the data of other authors on the study of GaSe crystals in the terahertz range, calculations and comparisons of the results were performed. The discrepancy between the values of χ(2) from 5 to 28 pm/V, depending on the experimental conditions, is shown. For the first time, second-order nonlinearity was estimated for GaSe crystals with varying degrees of sulfur doping. This research was funded by the Ministry of Science and Higher Education of the Russian Federation: project No. FSUS-2020-0029; project No. 121032400052-6. The authors acknowledge the Shared Research Center “VTAN” of the Novosibirsk State University supported by Minobrnauki of Russia by agreement No. 075-12-2021-697. The authors acknowledge the Shared Equipment Center “Spectroscopy and Optics” of the Institute of Automation and Electrometry SB RAS.

M3 - Abstract

SP - 182

EP - 183

T2 - XVI International Conference on pulsed lasers nad laser applications 2023

Y2 - 10 September 2023 through 15 September 2023

ER -