Enhanced optical properties of silicon based quantum dot heterostructures

Standard

Enhanced optical properties of silicon based quantum dot heterostructures. / Dvurechenskii, Anatoly; Yakimov, Andrew; Kirienko, Victor et al.

Physics and Technology of Nanostructured Materials. Vol. 386 DDF Trans Tech Publications Ltd, 2018. p. 68-74.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Dvurechenskii, A, Yakimov, A, Kirienko, V, Bloshkin, A, Zinovyev, V, Zinovieva, A & Mudryi, A 2018, Enhanced optical properties of silicon based quantum dot heterostructures. in Physics and Technology of Nanostructured Materials. vol. 386 DDF, Trans Tech Publications Ltd, pp. 68-74, 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018, Vladivostok, Russian Federation, 23.09.2018. https://doi.org/10.4028/www.scientific.net/DDF.386.68

APA

Dvurechenskii, A., Yakimov, A., Kirienko, V., Bloshkin, A., Zinovyev, V., Zinovieva, A., & Mudryi, A. (2018). Enhanced optical properties of silicon based quantum dot heterostructures. In Physics and Technology of Nanostructured Materials (Vol. 386 DDF, pp. 68-74). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/DDF.386.68

Vancouver

Dvurechenskii A, Yakimov A, Kirienko V, Bloshkin A, Zinovyev V, Zinovieva A et al. Enhanced optical properties of silicon based quantum dot heterostructures. In Physics and Technology of Nanostructured Materials. Vol. 386 DDF. Trans Tech Publications Ltd. 2018. p. 68-74 doi: 10.4028/www.scientific.net/DDF.386.68

Author

Dvurechenskii, Anatoly ; Yakimov, Andrew ; Kirienko, Victor et al. / Enhanced optical properties of silicon based quantum dot heterostructures. Physics and Technology of Nanostructured Materials. Vol. 386 DDF Trans Tech Publications Ltd, 2018. pp. 68-74

BibTeX

@inproceedings{df0dc10fdd78494fa493521273bd745d,

title = "Enhanced optical properties of silicon based quantum dot heterostructures",

abstract = "New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.",

keywords = "Ge, Infrared photodetector, Luminescence, Polariton, Quantum dot, Si, Surface plasmon",

author = "Anatoly Dvurechenskii and Andrew Yakimov and Victor Kirienko and Alekcei Bloshkin and Vladimir Zinovyev and Aigul Zinovieva and Alexander Mudryi",

note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland; 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018 ; Conference date: 23-09-2018 Through 28-09-2018",

year = "2018",

month = jan,

day = "1",

doi = "10.4028/www.scientific.net/DDF.386.68",

language = "English",

isbn = "9783035714777",

volume = "386 DDF",

pages = "68--74",

booktitle = "Physics and Technology of Nanostructured Materials",

publisher = "Trans Tech Publications Ltd",

}

RIS

TY - GEN

T1 - Enhanced optical properties of silicon based quantum dot heterostructures

AU - Dvurechenskii, Anatoly

AU - Yakimov, Andrew

AU - Kirienko, Victor

AU - Bloshkin, Alekcei

AU - Zinovyev, Vladimir

AU - Zinovieva, Aigul

AU - Mudryi, Alexander

PY - 2018/1/1

Y1 - 2018/1/1

N2 - New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

AB - New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

KW - Ge

KW - Infrared photodetector

KW - Luminescence

KW - Polariton

KW - Quantum dot

KW - Si

KW - Surface plasmon

UR - http://www.scopus.com/inward/record.url?scp=85054781933&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/DDF.386.68

DO - 10.4028/www.scientific.net/DDF.386.68

M3 - Conference contribution

AN - SCOPUS:85054781933

SN - 9783035714777

VL - 386 DDF

SP - 68

EP - 74

BT - Physics and Technology of Nanostructured Materials

PB - Trans Tech Publications Ltd

T2 - 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018

Y2 - 23 September 2018 through 28 September 2018

ER -

ID: 17119460