TY - GEN

T1 - Energy-Efficient Resistive Switching in VO2 Mesostructure

AU - Kapoguzov, Kirill E.

AU - Mutilin, Sergey V.

AU - Tumashev, Vitaliy S.

AU - Bagochus, Evgeny K.

AU - Kichay, Vadim N.

AU - Yakovkina, Lyubov V.

N1 - Conference code: 25

PY - 2024

Y1 - 2024

N2 - Vanadium dioxide (VO2) is a functional material in which, at a temperature of 68 °C, an ultrafast semiconductor-metal phase transition occurs with a conductivity jump up to five orders in magnitude. This property makes VO2 promising for creating energy-efficient resistive switches. For practical applications, an urgent task is to reduce operating voltages and energy consumption during electrical switching. The formation of structures of special geometry in which heat dissipation is reduced compared to classical planar and vertical switches makes it possible to improve its energy efficiency and stability. In this paper we compare two types of vertical two-contact resistive switches based on polycrystalline VO2 films and on VO2 mesostructure. In such mesostructures VO2 was located directly between two contacts. It was formed using photolithography and subsequent plasma etching of VO2 film. It is shown that in such mesostructures, electrical switching occurs at lower voltages and power, compared with switches based on a uniform VO2 film. By locally removing the part of the film, it was possible to reduce the amount of heat dissipation by an order of magnitude. Switches based on the formed VO2 mesostructures can be integrated into ultrafast and energy efficient electrical and optical systems, such as sensors, memory elements and neuromorphic systems.

AB - Vanadium dioxide (VO2) is a functional material in which, at a temperature of 68 °C, an ultrafast semiconductor-metal phase transition occurs with a conductivity jump up to five orders in magnitude. This property makes VO2 promising for creating energy-efficient resistive switches. For practical applications, an urgent task is to reduce operating voltages and energy consumption during electrical switching. The formation of structures of special geometry in which heat dissipation is reduced compared to classical planar and vertical switches makes it possible to improve its energy efficiency and stability. In this paper we compare two types of vertical two-contact resistive switches based on polycrystalline VO2 films and on VO2 mesostructure. In such mesostructures VO2 was located directly between two contacts. It was formed using photolithography and subsequent plasma etching of VO2 film. It is shown that in such mesostructures, electrical switching occurs at lower voltages and power, compared with switches based on a uniform VO2 film. By locally removing the part of the film, it was possible to reduce the amount of heat dissipation by an order of magnitude. Switches based on the formed VO2 mesostructures can be integrated into ultrafast and energy efficient electrical and optical systems, such as sensors, memory elements and neuromorphic systems.

KW - heat dissipation

KW - mesostructures

KW - resistive switches

KW - semiconductor-metal phase transition

KW - vanadium dioxide

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85201978181&origin=inward&txGid=ed127eb687f5d777d07fe1b83936796a

UR - https://www.mendeley.com/catalogue/0a7ca9f0-8da0-34a5-88bd-70523d881261/

U2 - 10.1109/EDM61683.2024.10615113

DO - 10.1109/EDM61683.2024.10615113

M3 - Conference contribution

SN - 9798350389234

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 190

EP - 194

BT - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

PB - IEEE Computer Society

T2 - 25th IEEE International Conference of Young Professionals in Electron Devices and Materials

Y2 - 28 June 2024 through 2 July 2024

ER -